A metal-to-metal contact RF MEMS switch towards handsets applications

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

2 Citations (Scopus)

Abstract

A MEMS switch for radio frequency applications has been designed, fabricated, and characterized. The focus has been in the optimization of switch performance towards handset applications. The realized switch has actuation voltage less than 15 V for realizing a good metal-to-metal contact. Measured results show loss less than 0.25 dB up to 10 GHz with matching better than -30 dB in the down-state, and isolation better than -20 dB up to 6 GHz in the up-state. (3 refs.)
Original languageEnglish
Title of host publicationSmart Sensors, Actuators, and MEMS III
PublisherInternational Society for Optics and Photonics SPIE
ISBN (Print)978-0-8194-6717-1
DOIs
Publication statusPublished - 2007
MoE publication typeA4 Article in a conference publication
EventSPIE Microtechnologies for the New Millennium. Smart Sensors, Actuators, and MEMS III - Maspalomas, Gran Canaria, Spain
Duration: 2 May 20074 May 2007

Publication series

SeriesProceedings of SPIE
Volume6589
ISSN0277-786X

Conference

ConferenceSPIE Microtechnologies for the New Millennium. Smart Sensors, Actuators, and MEMS III
CountrySpain
CityMaspalomas, Gran Canaria
Period2/05/074/05/07

Fingerprint

MEMS
Switches
Metals
Electric potential

Cite this

Vähä-Heikkilä, T., & Rantakari, P. (2007). A metal-to-metal contact RF MEMS switch towards handsets applications. In Smart Sensors, Actuators, and MEMS III [65890Y] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 6589 https://doi.org/10.1117/12.721582
Vähä-Heikkilä, Tauno ; Rantakari, Pekka. / A metal-to-metal contact RF MEMS switch towards handsets applications. Smart Sensors, Actuators, and MEMS III. International Society for Optics and Photonics SPIE, 2007. (Proceedings of SPIE, Vol. 6589).
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abstract = "A MEMS switch for radio frequency applications has been designed, fabricated, and characterized. The focus has been in the optimization of switch performance towards handset applications. The realized switch has actuation voltage less than 15 V for realizing a good metal-to-metal contact. Measured results show loss less than 0.25 dB up to 10 GHz with matching better than -30 dB in the down-state, and isolation better than -20 dB up to 6 GHz in the up-state. (3 refs.)",
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Vähä-Heikkilä, T & Rantakari, P 2007, A metal-to-metal contact RF MEMS switch towards handsets applications. in Smart Sensors, Actuators, and MEMS III., 65890Y, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 6589, SPIE Microtechnologies for the New Millennium. Smart Sensors, Actuators, and MEMS III, Maspalomas, Gran Canaria, Spain, 2/05/07. https://doi.org/10.1117/12.721582

A metal-to-metal contact RF MEMS switch towards handsets applications. / Vähä-Heikkilä, Tauno; Rantakari, Pekka.

Smart Sensors, Actuators, and MEMS III. International Society for Optics and Photonics SPIE, 2007. 65890Y (Proceedings of SPIE, Vol. 6589).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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N2 - A MEMS switch for radio frequency applications has been designed, fabricated, and characterized. The focus has been in the optimization of switch performance towards handset applications. The realized switch has actuation voltage less than 15 V for realizing a good metal-to-metal contact. Measured results show loss less than 0.25 dB up to 10 GHz with matching better than -30 dB in the down-state, and isolation better than -20 dB up to 6 GHz in the up-state. (3 refs.)

AB - A MEMS switch for radio frequency applications has been designed, fabricated, and characterized. The focus has been in the optimization of switch performance towards handset applications. The realized switch has actuation voltage less than 15 V for realizing a good metal-to-metal contact. Measured results show loss less than 0.25 dB up to 10 GHz with matching better than -30 dB in the down-state, and isolation better than -20 dB up to 6 GHz in the up-state. (3 refs.)

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Vähä-Heikkilä T, Rantakari P. A metal-to-metal contact RF MEMS switch towards handsets applications. In Smart Sensors, Actuators, and MEMS III. International Society for Optics and Photonics SPIE. 2007. 65890Y. (Proceedings of SPIE, Vol. 6589). https://doi.org/10.1117/12.721582