A monolithic double balanced mixer using passive GaAs MESFETs

Tapani Närhi

doi:10.1109/MELCON.1989.50050

A monolithic double balanced mixer using passive GaAs MESFETs

Tapani Närhi

VTT Technical Research Centre of Finland

VTT (former employee or external)

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

A monolithic double balanced mixer has been realized using 1- μm GaAs technology. It utilizes the channel resistance of a MESFET operating in the linear region to produce a strong mixer with a high compression point and low intermodulation distortion. Conversion loss of 5.5 dB and an input third-order intercept point of 21 dBm have been measured.

Original language	English
Title of host publication	Mediterranean Electrotechnical Conference (MELECON'89)
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	336-338
DOIs	https://doi.org/10.1109/MELCON.1989.50050
Publication status	Published - 1989
MoE publication type	A4 Article in a conference publication
Event	MELECON '89 Mediterranean Electrochemical Conference - Lissabon, Portugal Duration: 11 Apr 1989 → 13 Apr 1989

Conference

Conference	MELECON '89 Mediterranean Electrochemical Conference
Country/Territory	Portugal
City	Lissabon
Period	11/04/89 → 13/04/89

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10.1109/MELCON.1989.50050

Cite this

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title = "A monolithic double balanced mixer using passive GaAs MESFETs",

abstract = "A monolithic double balanced mixer has been realized using 1- μm GaAs technology. It utilizes the channel resistance of a MESFET operating in the linear region to produce a strong mixer with a high compression point and low intermodulation distortion. Conversion loss of 5.5 dB and an input third-order intercept point of 21 dBm have been measured.",

author = "Tapani N{\"a}rhi",

year = "1989",

doi = "10.1109/MELCON.1989.50050",

language = "English",

pages = "336--338",

booktitle = "Mediterranean Electrotechnical Conference (MELECON'89)",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "MELECON '89 Mediterranean Electrochemical Conference ; Conference date: 11-04-1989 Through 13-04-1989",

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AU - Närhi, Tapani

PY - 1989

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N2 - A monolithic double balanced mixer has been realized using 1- μm GaAs technology. It utilizes the channel resistance of a MESFET operating in the linear region to produce a strong mixer with a high compression point and low intermodulation distortion. Conversion loss of 5.5 dB and an input third-order intercept point of 21 dBm have been measured.

AB - A monolithic double balanced mixer has been realized using 1- μm GaAs technology. It utilizes the channel resistance of a MESFET operating in the linear region to produce a strong mixer with a high compression point and low intermodulation distortion. Conversion loss of 5.5 dB and an input third-order intercept point of 21 dBm have been measured.

U2 - 10.1109/MELCON.1989.50050

DO - 10.1109/MELCON.1989.50050

M3 - Conference article in proceedings

SP - 336

EP - 338

BT - Mediterranean Electrotechnical Conference (MELECON'89)

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - MELECON '89 Mediterranean Electrochemical Conference

Y2 - 11 April 1989 through 13 April 1989

ER -

A monolithic double balanced mixer using passive GaAs MESFETs

Abstract

Conference

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Cite this