Abstract
A temperature compensated fully integrated 1.6 GHz harmonic VCO with GaAs E/D-MESFET technology has been designed for telecommunication applications. The circuit has a measured tuning range of over 400 MHz and it shows a good tuning linearity in the range of 1600-1700 MHz. With the proposed temperature compensation scheme the measured frequency drift is reduced from 36 MHz to less than 8 MHz in the temperature range of -20...+70°C.
Original language | English |
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Title of host publication | GAAS 98 Conference Proceedings |
Publisher | Microwave Engineering Europe |
Pages | 626-630 |
ISBN (Print) | 978-0-86213-146-3 |
Publication status | Published - 1998 |
MoE publication type | B3 Non-refereed article in conference proceedings |
Event | European Gallium Arsenide and Related III-V Compounds Application Symposium, GAAS '98: Held jointly with the 28th European Microwave Conference, EuMC 1998 - Amsterdam, Netherlands Duration: 6 Oct 1998 → 8 Oct 1998 |
Conference
Conference | European Gallium Arsenide and Related III-V Compounds Application Symposium, GAAS '98 |
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Country/Territory | Netherlands |
City | Amsterdam |
Period | 6/10/98 → 8/10/98 |