A monolithic temperature compensated 1.6 GHz VCO

Kari Stadius; Jan Holmberg; Risto Kaunisto; Petteri Alinikula; Veikko Porra

A monolithic temperature compensated 1.6 GHz VCO

Kari Stadius
, Jan Holmberg
, Risto Kaunisto
, Petteri Alinikula
, Veikko Porra

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific

Abstract

A temperature compensated fully integrated 1.6 GHz harmonic VCO with GaAs E/D-MESFET technology has been designed for telecommunication applications. The circuit has a measured tuning range of over 400 MHz and it shows a good tuning linearity in the range of 1600-1700 MHz. With the proposed temperature compensation scheme the measured frequency drift is reduced from 36 MHz to less than 8 MHz in the temperature range of -20...+70°C.

Original language	English
Title of host publication	GAAS 98 Conference Proceedings
Publisher	Microwave Engineering Europe
Pages	626-630
ISBN (Print)	978-0-86213-146-3
Publication status	Published - 1998
MoE publication type	B3 Non-refereed article in conference proceedings
Event	European Gallium Arsenide and Related III-V Compounds Application Symposium, GAAS '98: Held jointly with the 28th European Microwave Conference, EuMC 1998 - Amsterdam, Netherlands Duration: 6 Oct 1998 → 8 Oct 1998

Conference

Conference	European Gallium Arsenide and Related III-V Compounds Application Symposium, GAAS '98
Country/Territory	Netherlands
City	Amsterdam
Period	6/10/98 → 8/10/98

Cite this

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title = "A monolithic temperature compensated 1.6 GHz VCO",

abstract = "A temperature compensated fully integrated 1.6 GHz harmonic VCO with GaAs E/D-MESFET technology has been designed for telecommunication applications. The circuit has a measured tuning range of over 400 MHz and it shows a good tuning linearity in the range of 1600-1700 MHz. With the proposed temperature compensation scheme the measured frequency drift is reduced from 36 MHz to less than 8 MHz in the temperature range of -20...+70°C.",

author = "Kari Stadius and Jan Holmberg and Risto Kaunisto and Petteri Alinikula and Veikko Porra",

year = "1998",

language = "English",

isbn = "978-0-86213-146-3",

pages = "626--630",

booktitle = "GAAS 98 Conference Proceedings",

publisher = "Microwave Engineering Europe",

address = "Belgium",

note = "European Gallium Arsenide and Related III-V Compounds Application Symposium, GAAS '98 : Held jointly with the 28th European Microwave Conference, EuMC 1998 ; Conference date: 06-10-1998 Through 08-10-1998",

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TY - GEN

T1 - A monolithic temperature compensated 1.6 GHz VCO

AU - Stadius, Kari

AU - Holmberg, Jan

AU - Kaunisto, Risto

AU - Alinikula, Petteri

AU - Porra, Veikko

PY - 1998

Y1 - 1998

N2 - A temperature compensated fully integrated 1.6 GHz harmonic VCO with GaAs E/D-MESFET technology has been designed for telecommunication applications. The circuit has a measured tuning range of over 400 MHz and it shows a good tuning linearity in the range of 1600-1700 MHz. With the proposed temperature compensation scheme the measured frequency drift is reduced from 36 MHz to less than 8 MHz in the temperature range of -20...+70°C.

AB - A temperature compensated fully integrated 1.6 GHz harmonic VCO with GaAs E/D-MESFET technology has been designed for telecommunication applications. The circuit has a measured tuning range of over 400 MHz and it shows a good tuning linearity in the range of 1600-1700 MHz. With the proposed temperature compensation scheme the measured frequency drift is reduced from 36 MHz to less than 8 MHz in the temperature range of -20...+70°C.

M3 - Conference article in proceedings

SN - 978-0-86213-146-3

SP - 626

EP - 630

BT - GAAS 98 Conference Proceedings

PB - Microwave Engineering Europe

T2 - European Gallium Arsenide and Related III-V Compounds Application Symposium, GAAS '98

Y2 - 6 October 1998 through 8 October 1998

ER -

A monolithic temperature compensated 1.6 GHz VCO

Abstract

Conference

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