TY - JOUR
T1 - A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths
AU - Xue, Hui
AU - Wang, Yadong
AU - Dai, Yunyun
AU - Kim, Wonjae
AU - Jussila, Henri
AU - Qi, Mei
AU - Susoma, Jannatul
AU - Ren, Zhaoyu
AU - Dai, Qing
AU - Zhao, Jianlin
AU - Halonen, Kari
AU - Lipsanen, Harri
AU - Wang, Xiaomu
AU - Gan, Xuetao
AU - Sun, Zhipei
N1 - Funding Information:
H. Xue and Y. Wang contributed equally to this work. Luke Baker helped with the manuscript revision. This research was supported by the Academy of Finland (276376, 284548, 295777, 304666, 312297, 312551, and 314810); TEKES (OPEC); the European Union’s Seventh Framework Program (No. 631610); China Scholarship Council; the International Science and Technology Cooperation Project of China (No. 2014DFR10780). The authors also acknowledge the provision of technical facilities of the Micronova, Nanofabrication Centre of Aalto University.
Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/11/21
Y1 - 2018/11/21
N2 - van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.
AB - van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.
KW - MoSe
KW - photodetectors
KW - sub-bandgap photodetection
KW - van der Waals heterojunction
KW - WSe
UR - http://www.scopus.com/inward/record.url?scp=85054586217&partnerID=8YFLogxK
U2 - 10.1002/adfm.201804388
DO - 10.1002/adfm.201804388
M3 - Article
AN - SCOPUS:85054586217
SN - 1616-301X
VL - 28
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 47
M1 - 1804388
ER -