A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths

Hui Xue; Yadong Wang; Yunyun Dai; Wonjae Kim; Henri Jussila; Mei Qi; Jannatul Susoma; Zhaoyu Ren; Qing Dai; Jianlin Zhao; Kari Halonen; Harri Lipsanen; Xiaomu Wang; Xuetao Gan; Zhipei Sun

doi:10.1002/adfm.201804388

A MoSe₂/WSe₂ Heterojunction-Based Photodetector at Telecommunication Wavelengths

Hui Xue^*, Yadong Wang, Yunyun Dai, Wonjae Kim, Henri Jussila, Mei Qi, Jannatul Susoma, Zhaoyu Ren, Qing Dai, Jianlin Zhao, Kari Halonen, Harri Lipsanen, Xiaomu Wang, Xuetao Gan, Zhipei Sun

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

121 Citations (Scopus)

Abstract

van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe₂/WSe₂ vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W⁻¹ and 1.9 × 10⁴ mW⁻¹, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.

Original language	English
Article number	1804388
Journal	Advanced Functional Materials
Volume	28
Issue number	47
DOIs	https://doi.org/10.1002/adfm.201804388
Publication status	Published - 21 Nov 2018
MoE publication type	Not Eligible

Funding

This research was supported by the Academy of Finland (276376, 284548, 295777, 304666, 312297, 312551, and 314810); TEKES (OPEC); the European Union’s Seventh Framework Program (No. 631610); China Scholarship Council; the International Science and Technology Cooperation Project of China (No. 2014DFR10780). The authors also acknowledge the provision of technical facilities of the Micronova, Nanofabrication Centre of Aalto University.

Keywords

MoSe
photodetectors
sub-bandgap photodetection
van der Waals heterojunction
WSe

Access to Document

10.1002/adfm.201804388

Cite this

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title = "A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths",

abstract = "van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.",

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AU - Xue, Hui

AU - Wang, Yadong

AU - Dai, Yunyun

AU - Kim, Wonjae

AU - Jussila, Henri

AU - Qi, Mei

AU - Susoma, Jannatul

AU - Ren, Zhaoyu

AU - Dai, Qing

AU - Zhao, Jianlin

AU - Halonen, Kari

AU - Lipsanen, Harri

AU - Wang, Xiaomu

AU - Gan, Xuetao

AU - Sun, Zhipei

PY - 2018/11/21

Y1 - 2018/11/21

N2 - van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.

AB - van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.

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