A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths

Hui Xue (Corresponding Author), Yadong Wang, Yunyun Dai, Wonjae Kim, Henri Jussila, Mei Qi, Jannatul Susoma, Zhaoyu Ren, Qing Dai, Jianlin Zhao, Kari Halonen, Harri Lipsanen, Xiaomu Wang, Xuetao Gan, Zhipei Sun

    Research output: Contribution to journalArticleResearchpeer-review

    Abstract

    van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.

    LanguageEnglish
    Article number1804388
    JournalAdvanced Functional Materials
    Volume28
    Issue number47
    DOIs
    Publication statusPublished - 21 Nov 2018
    MoE publication typeNot Eligible

    Fingerprint

    Photodetectors
    Telecommunication
    photometers
    Heterojunctions
    telecommunication
    heterojunctions
    Wavelength
    Optoelectronic devices
    wavelengths
    Photonic devices
    Dark currents
    engineering
    photonics
    Photocurrents
    Band structure
    Photonics
    Energy gap
    optoelectronic devices
    dark current
    photocurrents

    Keywords

    • MoSe
    • photodetectors
    • sub-bandgap photodetection
    • van der Waals heterojunction
    • WSe

    OKM Publication Types

    • A1 Refereed journal article

    OKM Open Access Status

    • 0 Not Open Access

    ASJC Scopus subject areas

    • Chemistry(all)
    • Materials Science(all)
    • Condensed Matter Physics

    Cite this

    Xue, Hui ; Wang, Yadong ; Dai, Yunyun ; Kim, Wonjae ; Jussila, Henri ; Qi, Mei ; Susoma, Jannatul ; Ren, Zhaoyu ; Dai, Qing ; Zhao, Jianlin ; Halonen, Kari ; Lipsanen, Harri ; Wang, Xiaomu ; Gan, Xuetao ; Sun, Zhipei. / A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths. In: Advanced Functional Materials. 2018 ; Vol. 28, No. 47.
    @article{7e695932c8a14bfaa546b0c4bd036780,
    title = "A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths",
    abstract = "van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.",
    keywords = "MoSe, photodetectors, sub-bandgap photodetection, van der Waals heterojunction, WSe",
    author = "Hui Xue and Yadong Wang and Yunyun Dai and Wonjae Kim and Henri Jussila and Mei Qi and Jannatul Susoma and Zhaoyu Ren and Qing Dai and Jianlin Zhao and Kari Halonen and Harri Lipsanen and Xiaomu Wang and Xuetao Gan and Zhipei Sun",
    year = "2018",
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    day = "21",
    doi = "10.1002/adfm.201804388",
    language = "English",
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    journal = "Advanced Functional Materials",
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    Xue, H, Wang, Y, Dai, Y, Kim, W, Jussila, H, Qi, M, Susoma, J, Ren, Z, Dai, Q, Zhao, J, Halonen, K, Lipsanen, H, Wang, X, Gan, X & Sun, Z 2018, 'A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths' Advanced Functional Materials, vol. 28, no. 47, 1804388. https://doi.org/10.1002/adfm.201804388

    A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths. / Xue, Hui (Corresponding Author); Wang, Yadong; Dai, Yunyun; Kim, Wonjae; Jussila, Henri; Qi, Mei; Susoma, Jannatul; Ren, Zhaoyu; Dai, Qing; Zhao, Jianlin; Halonen, Kari; Lipsanen, Harri; Wang, Xiaomu; Gan, Xuetao; Sun, Zhipei.

    In: Advanced Functional Materials, Vol. 28, No. 47, 1804388, 21.11.2018.

    Research output: Contribution to journalArticleResearchpeer-review

    TY - JOUR

    T1 - A MoSe2/WSe2 Heterojunction-Based Photodetector at Telecommunication Wavelengths

    AU - Xue, Hui

    AU - Wang, Yadong

    AU - Dai, Yunyun

    AU - Kim, Wonjae

    AU - Jussila, Henri

    AU - Qi, Mei

    AU - Susoma, Jannatul

    AU - Ren, Zhaoyu

    AU - Dai, Qing

    AU - Zhao, Jianlin

    AU - Halonen, Kari

    AU - Lipsanen, Harri

    AU - Wang, Xiaomu

    AU - Gan, Xuetao

    AU - Sun, Zhipei

    PY - 2018/11/21

    Y1 - 2018/11/21

    N2 - van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.

    AB - van der Waals (vdW) heterojunctions enable arbitrary combinations of different layered semiconductors with unique band structures, offering distinctive band engineering for photonic and optoelectronic devices with new functionalities and superior performance. Here, an interlayer photoresponse of a few-layer MoSe2/WSe2 vdW heterojunction is reported. With proper electrical gating and bias, the heterojunction exhibits high-sensitivity photodetection with the operation wavelength extended up to the telecommunication band (i.e. 1550 nm). The photoresponsivity and normalized photocurrent-to-dark current ratio reach up to 127 mA W−1 and 1.9 × 104 mW−1, respectively. The results not only provide a promising solution to realize high-performance vdW telecommunication band photodetectors, but also pave the way for using sub-bandgap engineering of two-dimensional layered materials for photonic and optoelectronic applications.

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    KW - sub-bandgap photodetection

    KW - van der Waals heterojunction

    KW - WSe

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    JO - Advanced Functional Materials

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