A novel CMP process on fixed abrasive pads for the manufacturing of highly planar thick film SOI substrates

Martin Kulawski; Kimmo Henttinen; Ilkka Suni; Frauke Weimar; Jari Mäkinen

doi:10.1557/PROC-767-F2.11

A novel CMP process on fixed abrasive pads for the manufacturing of highly planar thick film SOI substrates

Martin Kulawski^*
, Kimmo Henttinen
, Ilkka Suni
, Frauke Weimar
, Jari Mäkinen

^*Corresponding author for this work

VTT Technical Research Centre of Finland

VTT (former employee or external)
3M Laboratories (Europe)
Okmetic Oyj

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

6 Citations (Scopus)

Abstract

A new approach using Fixed Abrasive (FA) pads has been undertaken to overcome the problem of non-uniform thick film Silicon-on-Insulator (SOI) wafers after CMP polishing. The theoretical models indicating the advantages of the 2-body system of the fixed abrasive configuration vs. the conventional 3-body system of slurry based polishing have been convincingly demonstrated in practise upon experiments in a wide range of parameters. As a result it is possible to maintain or improve the flatness of wafers after back grinding, while simultaneously removing the sub-surface damage. A surface quality of prime wafers can be reached on the device layer. Capacitive thickness measurement scans and atomic force microscopy (AFM) monitoring confirm the results. A detailed comparison with conventional processing has been carried out to clarify the advantages on bulk silicon wafers. Decoration etching is used to analyse the wafer surface quality in terms of oxide induced stacking faults (OISF). As a result an alternative processing method is proposed for manufacturing thick film SOI substrates with improved uniformity.

Original language	English
Title of host publication	Materials Research Society Proceedings 2003
Subtitle of host publication	Symposium F - Chemical-Mechanical Planarization
Editors	D. Boning, K. Devriendt, M. Oliver, D. Stein
Place of Publication	Warrendale
Publisher	Materials Research Society
Pages	133-138
DOIs	https://doi.org/10.1557/PROC-767-F2.11
Publication status	Published - 2003
MoE publication type	A4 Article in a conference publication
Event	Materials Research Society 2003 Conference: Symposium F - Chemical-Mechanical Planarization - San Francisco, United States Duration: 22 Apr 2003 → 24 Apr 2003

Publication series

Series	Materials Research Society Symposia Proceedings
Volume	767
ISSN	0272-9172

Conference

Conference	Materials Research Society 2003 Conference
Country/Territory	United States
City	San Francisco
Period	22/04/03 → 24/04/03

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

SOI
CMP
fixed abrasive
FA
polishing
chemical mechanical planarization

Access to Document

10.1557/PROC-767-F2.11

https://aaltodoc.aalto.fi/bitstream/handle/123456789/2736/article1.pdf? sequence=2

Cite this

Kulawski, M., Henttinen, K., Suni, I., Weimar, F., & Mäkinen, J. (2003). A novel CMP process on fixed abrasive pads for the manufacturing of highly planar thick film SOI substrates. In D. Boning, K. Devriendt, M. Oliver, & D. Stein (Eds.), Materials Research Society Proceedings 2003: Symposium F - Chemical-Mechanical Planarization (pp. 133-138). Materials Research Society. https://doi.org/10.1557/PROC-767-F2.11

Kulawski, Martin ; Henttinen, Kimmo ; Suni, Ilkka et al. / A novel CMP process on fixed abrasive pads for the manufacturing of highly planar thick film SOI substrates. Materials Research Society Proceedings 2003: Symposium F - Chemical-Mechanical Planarization. editor / D. Boning ; K. Devriendt ; M. Oliver ; D. Stein. Warrendale : Materials Research Society, 2003. pp. 133-138 (Materials Research Society Symposia Proceedings, Vol. 767).

@inproceedings{d25a60293f0f47638b35328570e11fde,

title = "A novel CMP process on fixed abrasive pads for the manufacturing of highly planar thick film SOI substrates",

abstract = "A new approach using Fixed Abrasive (FA) pads has been undertaken to overcome the problem of non-uniform thick film Silicon-on-Insulator (SOI) wafers after CMP polishing. The theoretical models indicating the advantages of the 2-body system of the fixed abrasive configuration vs. the conventional 3-body system of slurry based polishing have been convincingly demonstrated in practise upon experiments in a wide range of parameters. As a result it is possible to maintain or improve the flatness of wafers after back grinding, while simultaneously removing the sub-surface damage. A surface quality of prime wafers can be reached on the device layer. Capacitive thickness measurement scans and atomic force microscopy (AFM) monitoring confirm the results. A detailed comparison with conventional processing has been carried out to clarify the advantages on bulk silicon wafers. Decoration etching is used to analyse the wafer surface quality in terms of oxide induced stacking faults (OISF). As a result an alternative processing method is proposed for manufacturing thick film SOI substrates with improved uniformity.",

keywords = "SOI, CMP, fixed abrasive, FA, polishing, chemical mechanical planarization",

author = "Martin Kulawski and Kimmo Henttinen and Ilkka Suni and Frauke Weimar and Jari M{\"a}kinen",

note = "Project code: T2SU00142; Materials Research Society 2003 Conference : Symposium F - Chemical-Mechanical Planarization ; Conference date: 22-04-2003 Through 24-04-2003",

year = "2003",

doi = "10.1557/PROC-767-F2.11",

language = "English",

series = "Materials Research Society Symposia Proceedings",

publisher = "Materials Research Society",

pages = "133--138",

editor = "D. Boning and K. Devriendt and M. Oliver and D. Stein",

booktitle = "Materials Research Society Proceedings 2003",

address = "United States",

}

Kulawski, M, Henttinen, K, Suni, I, Weimar, F & Mäkinen, J 2003, A novel CMP process on fixed abrasive pads for the manufacturing of highly planar thick film SOI substrates. in D Boning, K Devriendt, M Oliver & D Stein (eds), Materials Research Society Proceedings 2003: Symposium F - Chemical-Mechanical Planarization. Materials Research Society, Warrendale, Materials Research Society Symposia Proceedings, vol. 767, pp. 133-138, Materials Research Society 2003 Conference, San Francisco, California, United States, 22/04/03. https://doi.org/10.1557/PROC-767-F2.11

A novel CMP process on fixed abrasive pads for the manufacturing of highly planar thick film SOI substrates. / Kulawski, Martin; Henttinen, Kimmo; Suni, Ilkka et al.
Materials Research Society Proceedings 2003: Symposium F - Chemical-Mechanical Planarization. ed. / D. Boning; K. Devriendt; M. Oliver; D. Stein. Warrendale: Materials Research Society, 2003. p. 133-138 (Materials Research Society Symposia Proceedings, Vol. 767).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - A novel CMP process on fixed abrasive pads for the manufacturing of highly planar thick film SOI substrates

AU - Kulawski, Martin

AU - Henttinen, Kimmo

AU - Suni, Ilkka

AU - Weimar, Frauke

AU - Mäkinen, Jari

N1 - Project code: T2SU00142

PY - 2003

Y1 - 2003

N2 - A new approach using Fixed Abrasive (FA) pads has been undertaken to overcome the problem of non-uniform thick film Silicon-on-Insulator (SOI) wafers after CMP polishing. The theoretical models indicating the advantages of the 2-body system of the fixed abrasive configuration vs. the conventional 3-body system of slurry based polishing have been convincingly demonstrated in practise upon experiments in a wide range of parameters. As a result it is possible to maintain or improve the flatness of wafers after back grinding, while simultaneously removing the sub-surface damage. A surface quality of prime wafers can be reached on the device layer. Capacitive thickness measurement scans and atomic force microscopy (AFM) monitoring confirm the results. A detailed comparison with conventional processing has been carried out to clarify the advantages on bulk silicon wafers. Decoration etching is used to analyse the wafer surface quality in terms of oxide induced stacking faults (OISF). As a result an alternative processing method is proposed for manufacturing thick film SOI substrates with improved uniformity.

AB - A new approach using Fixed Abrasive (FA) pads has been undertaken to overcome the problem of non-uniform thick film Silicon-on-Insulator (SOI) wafers after CMP polishing. The theoretical models indicating the advantages of the 2-body system of the fixed abrasive configuration vs. the conventional 3-body system of slurry based polishing have been convincingly demonstrated in practise upon experiments in a wide range of parameters. As a result it is possible to maintain or improve the flatness of wafers after back grinding, while simultaneously removing the sub-surface damage. A surface quality of prime wafers can be reached on the device layer. Capacitive thickness measurement scans and atomic force microscopy (AFM) monitoring confirm the results. A detailed comparison with conventional processing has been carried out to clarify the advantages on bulk silicon wafers. Decoration etching is used to analyse the wafer surface quality in terms of oxide induced stacking faults (OISF). As a result an alternative processing method is proposed for manufacturing thick film SOI substrates with improved uniformity.

KW - SOI

KW - CMP

KW - fixed abrasive

KW - FA

KW - polishing

KW - chemical mechanical planarization

U2 - 10.1557/PROC-767-F2.11

DO - 10.1557/PROC-767-F2.11

M3 - Conference article in proceedings

T3 - Materials Research Society Symposia Proceedings

SP - 133

EP - 138

BT - Materials Research Society Proceedings 2003

A2 - Boning, D.

A2 - Devriendt, K.

A2 - Oliver, M.

A2 - Stein, D.

PB - Materials Research Society

CY - Warrendale

T2 - Materials Research Society 2003 Conference

Y2 - 22 April 2003 through 24 April 2003

ER -

Kulawski M, Henttinen K, Suni I, Weimar F, Mäkinen J. A novel CMP process on fixed abrasive pads for the manufacturing of highly planar thick film SOI substrates. In Boning D, Devriendt K, Oliver M, Stein D, editors, Materials Research Society Proceedings 2003: Symposium F - Chemical-Mechanical Planarization. Warrendale: Materials Research Society. 2003. p. 133-138. (Materials Research Society Symposia Proceedings, Vol. 767). doi: 10.1557/PROC-767-F2.11

A novel CMP process on fixed abrasive pads for the manufacturing of highly planar thick film SOI substrates

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

Fingerprint

Cite this