A novel method for metal oxide nanowire synthesis

Simas Rackauskas; Albert Nasibulin; Hua Jiang; Ying Tian; Victor I. Kleshch; Jani Sainio; Elena D. Obraztsova; Sofia N. Bokova; Alexander N. Obraztsov; Esko I. Kauppinen

doi:10.1088/0957-4484/20/16/165603

A novel method for metal oxide nanowire synthesis

Simas Rackauskas, Albert Nasibulin, Hua Jiang, Ying Tian, Victor I. Kleshch, Jani Sainio, Elena D. Obraztsova, Sofia N. Bokova, Alexander N. Obraztsov, Esko I. Kauppinen

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

92 Citations (Scopus)

Abstract

Nanowires (NWs) of metal oxides (Fe₂O₃, CuO, V₂O₅and ZnO) were grown by an efficient non-catalytic economically favorable method based on resistive heating of pure metal wires or foils at ambient conditions. The growth rate of iron oxide NWs exceeds 100 nm s⁻¹. Produced NWs were typically 1–5 µm long with diameters from 10 to 50 nm. The produced metal oxide NWs were characterized by means of SEM, TEM, EDX, XPS and Raman techniques. The field emission measurements from the as-produced CuO NWs were found to have a threshold field as low as 4 V µm⁻¹ at 0.01 mA cm⁻². The formation mechanism of the NWs is discussed.

Original language	English
Article number	165603
Journal	Nanotechnology
Volume	20
Issue number	16
DOIs	https://doi.org/10.1088/0957-4484/20/16/165603
Publication status	Published - 2009
MoE publication type	A1 Journal article-refereed

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@article{78cc0cbecd11477c8788897de5551adb,

title = "A novel method for metal oxide nanowire synthesis",

abstract = "Nanowires (NWs) of metal oxides (Fe2O3, CuO, V2O5 and ZnO) were grown by an efficient non-catalytic economically favorable method based on resistive heating of pure metal wires or foils at ambient conditions. The growth rate of iron oxide NWs exceeds 100 nm s−1. Produced NWs were typically 1–5 µm long with diameters from 10 to 50 nm. The produced metal oxide NWs were characterized by means of SEM, TEM, EDX, XPS and Raman techniques. The field emission measurements from the as-produced CuO NWs were found to have a threshold field as low as 4 V µm−1 at 0.01 mA cm−2. The formation mechanism of the NWs is discussed.",

author = "Simas Rackauskas and Albert Nasibulin and Hua Jiang and Ying Tian and Kleshch, {Victor I.} and Jani Sainio and Obraztsova, {Elena D.} and Bokova, {Sofia N.} and Obraztsov, {Alexander N.} and Kauppinen, {Esko I.}",

year = "2009",

doi = "10.1088/0957-4484/20/16/165603",

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T1 - A novel method for metal oxide nanowire synthesis

AU - Rackauskas, Simas

AU - Nasibulin, Albert

AU - Jiang, Hua

AU - Tian, Ying

AU - Kleshch, Victor I.

AU - Sainio, Jani

AU - Obraztsova, Elena D.

AU - Bokova, Sofia N.

AU - Obraztsov, Alexander N.

AU - Kauppinen, Esko I.

PY - 2009

Y1 - 2009

N2 - Nanowires (NWs) of metal oxides (Fe2O3, CuO, V2O5 and ZnO) were grown by an efficient non-catalytic economically favorable method based on resistive heating of pure metal wires or foils at ambient conditions. The growth rate of iron oxide NWs exceeds 100 nm s−1. Produced NWs were typically 1–5 µm long with diameters from 10 to 50 nm. The produced metal oxide NWs were characterized by means of SEM, TEM, EDX, XPS and Raman techniques. The field emission measurements from the as-produced CuO NWs were found to have a threshold field as low as 4 V µm−1 at 0.01 mA cm−2. The formation mechanism of the NWs is discussed.

AB - Nanowires (NWs) of metal oxides (Fe2O3, CuO, V2O5 and ZnO) were grown by an efficient non-catalytic economically favorable method based on resistive heating of pure metal wires or foils at ambient conditions. The growth rate of iron oxide NWs exceeds 100 nm s−1. Produced NWs were typically 1–5 µm long with diameters from 10 to 50 nm. The produced metal oxide NWs were characterized by means of SEM, TEM, EDX, XPS and Raman techniques. The field emission measurements from the as-produced CuO NWs were found to have a threshold field as low as 4 V µm−1 at 0.01 mA cm−2. The formation mechanism of the NWs is discussed.

U2 - 10.1088/0957-4484/20/16/165603

DO - 10.1088/0957-4484/20/16/165603

M3 - Article

VL - 20

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 16

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