A strained silicon cold electron bolometer using Schottky contacts

T L R Brien (Corresponding Author), P A R Ade, P S Barry, C Dunscombe, D R Leadley, D V Morozov, M Myronov, E H C Parker, M J Prest, Mika Prunnila, et al

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

We describe optical characterisation of a strained silicon cold electron bolometer (CEB), operating on a 350 mK stage, designed for absorption of millimetre-wave radiation. The silicon cold electron bolometer utilises Schottky contacts between a superconductor and an n++ doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we decrease the electron-phonon coupling in the device and increase the responsivity to incoming power. The strained silicon absorber is coupled to a planar aluminium twin-slot antenna designed to couple to 160 GHz and that serves as the superconducting contacts. From the measured optical responsivity and spectral response, we calculate a maximum optical efficiency of 50% for radiation coupled into the device by the planar antenna and an overall noise equivalent power, referred to absorbed optical power, of 1.1*10-16 W Hz-1/2 when the detector is observing a 300 K source through a 4 K throughput limiting aperture. Even though this optical system is not optimized, we measure a system noise equivalent temperature difference of 6 mK Hz-1/2. We measure the noise of the device using a cross-correlation of time stream data, measured simultaneously with two junction field-effect transistor amplifiers, with a base correlated noise level of 300 pV Hz-1/2 and find that the total noise is consistent with a combination of photon noise, current shot noise, and electron-phonon thermal noise
Original languageEnglish
Article number043509
JournalApplied Physics Letters
Volume105
Issue number4
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

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bolometers
electric contacts
silicon
electrons
absorbers
transistor amplifiers
JFET
slot antennas
thermal noise
shot noise
radiation
spectral sensitivity
cross correlation
millimeter waves
charge carriers
temperature gradients
electromagnetic radiation
antennas
apertures
aluminum

Cite this

Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C., Leadley, D. R., Morozov, D. V., ... al, E. (2014). A strained silicon cold electron bolometer using Schottky contacts. Applied Physics Letters, 105(4), [043509]. https://doi.org/10.1063/1.4892069
Brien, T L R ; Ade, P A R ; Barry, P S ; Dunscombe, C ; Leadley, D R ; Morozov, D V ; Myronov, M ; Parker, E H C ; Prest, M J ; Prunnila, Mika ; al, et. / A strained silicon cold electron bolometer using Schottky contacts. In: Applied Physics Letters. 2014 ; Vol. 105, No. 4.
@article{78c02cd4b27f4b44b08f4aad2e6b19fb,
title = "A strained silicon cold electron bolometer using Schottky contacts",
abstract = "We describe optical characterisation of a strained silicon cold electron bolometer (CEB), operating on a 350 mK stage, designed for absorption of millimetre-wave radiation. The silicon cold electron bolometer utilises Schottky contacts between a superconductor and an n++ doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we decrease the electron-phonon coupling in the device and increase the responsivity to incoming power. The strained silicon absorber is coupled to a planar aluminium twin-slot antenna designed to couple to 160 GHz and that serves as the superconducting contacts. From the measured optical responsivity and spectral response, we calculate a maximum optical efficiency of 50{\%} for radiation coupled into the device by the planar antenna and an overall noise equivalent power, referred to absorbed optical power, of 1.1*10-16 W Hz-1/2 when the detector is observing a 300 K source through a 4 K throughput limiting aperture. Even though this optical system is not optimized, we measure a system noise equivalent temperature difference of 6 mK Hz-1/2. We measure the noise of the device using a cross-correlation of time stream data, measured simultaneously with two junction field-effect transistor amplifiers, with a base correlated noise level of 300 pV Hz-1/2 and find that the total noise is consistent with a combination of photon noise, current shot noise, and electron-phonon thermal noise",
author = "Brien, {T L R} and Ade, {P A R} and Barry, {P S} and C Dunscombe and Leadley, {D R} and Morozov, {D V} and M Myronov and Parker, {E H C} and Prest, {M J} and Mika Prunnila and et al",
year = "2014",
doi = "10.1063/1.4892069",
language = "English",
volume = "105",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "4",

}

Brien, TLR, Ade, PAR, Barry, PS, Dunscombe, C, Leadley, DR, Morozov, DV, Myronov, M, Parker, EHC, Prest, MJ, Prunnila, M & al, E 2014, 'A strained silicon cold electron bolometer using Schottky contacts', Applied Physics Letters, vol. 105, no. 4, 043509. https://doi.org/10.1063/1.4892069

A strained silicon cold electron bolometer using Schottky contacts. / Brien, T L R (Corresponding Author); Ade, P A R; Barry, P S; Dunscombe, C; Leadley, D R; Morozov, D V; Myronov, M; Parker, E H C; Prest, M J; Prunnila, Mika; al, et.

In: Applied Physics Letters, Vol. 105, No. 4, 043509, 2014.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - A strained silicon cold electron bolometer using Schottky contacts

AU - Brien, T L R

AU - Ade, P A R

AU - Barry, P S

AU - Dunscombe, C

AU - Leadley, D R

AU - Morozov, D V

AU - Myronov, M

AU - Parker, E H C

AU - Prest, M J

AU - Prunnila, Mika

AU - al, et

PY - 2014

Y1 - 2014

N2 - We describe optical characterisation of a strained silicon cold electron bolometer (CEB), operating on a 350 mK stage, designed for absorption of millimetre-wave radiation. The silicon cold electron bolometer utilises Schottky contacts between a superconductor and an n++ doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we decrease the electron-phonon coupling in the device and increase the responsivity to incoming power. The strained silicon absorber is coupled to a planar aluminium twin-slot antenna designed to couple to 160 GHz and that serves as the superconducting contacts. From the measured optical responsivity and spectral response, we calculate a maximum optical efficiency of 50% for radiation coupled into the device by the planar antenna and an overall noise equivalent power, referred to absorbed optical power, of 1.1*10-16 W Hz-1/2 when the detector is observing a 300 K source through a 4 K throughput limiting aperture. Even though this optical system is not optimized, we measure a system noise equivalent temperature difference of 6 mK Hz-1/2. We measure the noise of the device using a cross-correlation of time stream data, measured simultaneously with two junction field-effect transistor amplifiers, with a base correlated noise level of 300 pV Hz-1/2 and find that the total noise is consistent with a combination of photon noise, current shot noise, and electron-phonon thermal noise

AB - We describe optical characterisation of a strained silicon cold electron bolometer (CEB), operating on a 350 mK stage, designed for absorption of millimetre-wave radiation. The silicon cold electron bolometer utilises Schottky contacts between a superconductor and an n++ doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we decrease the electron-phonon coupling in the device and increase the responsivity to incoming power. The strained silicon absorber is coupled to a planar aluminium twin-slot antenna designed to couple to 160 GHz and that serves as the superconducting contacts. From the measured optical responsivity and spectral response, we calculate a maximum optical efficiency of 50% for radiation coupled into the device by the planar antenna and an overall noise equivalent power, referred to absorbed optical power, of 1.1*10-16 W Hz-1/2 when the detector is observing a 300 K source through a 4 K throughput limiting aperture. Even though this optical system is not optimized, we measure a system noise equivalent temperature difference of 6 mK Hz-1/2. We measure the noise of the device using a cross-correlation of time stream data, measured simultaneously with two junction field-effect transistor amplifiers, with a base correlated noise level of 300 pV Hz-1/2 and find that the total noise is consistent with a combination of photon noise, current shot noise, and electron-phonon thermal noise

U2 - 10.1063/1.4892069

DO - 10.1063/1.4892069

M3 - Article

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 043509

ER -

Brien TLR, Ade PAR, Barry PS, Dunscombe C, Leadley DR, Morozov DV et al. A strained silicon cold electron bolometer using Schottky contacts. Applied Physics Letters. 2014;105(4). 043509. https://doi.org/10.1063/1.4892069