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A strained silicon cold electron bolometer using Schottky contacts
T.L.R. Brien
*
, P.A.R. Ade
, P.S. Barry
, C. Dunscombe
, D.R. Leadley
, D.V. Morozov
, M. Myronov
, E.H.C. Parker
, M.J. Prest
,
Mika Prunnila
, R.V. Sudiwala
, T.E. Whall
, P.D. Mauskopf
*
Corresponding author for this work
Cardiff University
University of Warwick (WMG)
Arizona State University
Research output
:
Contribution to journal
›
Article
›
Scientific
›
peer-review
17
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Engineering
Responsivity
100%
Schottky Barrier
100%
Field-Effect Transistor
50%
Slot Antenna
50%
Optical Systems
50%
Amplifier
50%
Antenna
50%
Optical Power
50%
Spectral Response
50%
Absorbed Radiation
50%
Equivalent Temperature
50%
Millimeter Wave
50%
Thermal Noise
50%
Noise Level
50%
Optical Efficiency
50%
Stream Data
50%
Shot Noise
50%
Current Shot
50%
Crosscorrelation
50%
Charge Carrier
50%
Superconductor
50%
Keyphrases
Strained Silicon
100%
Cold-electron Bolometer
100%
Schottky Contact
100%
Optical Characterization
25%
Optical System
25%
Superconductor
25%
Noise Equivalent Power
25%
Noise Equivalent Temperature Difference
25%
Responsivity
25%
System Noise
25%
Charge Carriers
25%
Noise Level
25%
Optical Power
25%
Doped Silicon
25%
Streaming Data
25%
Silicon Absorbers
25%
Twin-slot Antennas
25%
Photon Noise
25%
Electron-phonon Coupling
25%
Absorber
25%
Thermal Noise
25%
Planar Antenna
25%
Optical Responsivity
25%
Junction Field-effect Transistors
25%
Electron-phonon
25%
Silicon Islands
25%
Spectral Response
25%
Superconducting Contacts
25%
Correlated Noise
25%
Optical Efficiency
25%
Shot Noise
25%
Total Noise
25%
Absorbed Radiation
25%
Millimeter-wave Radiation
25%
Noise Current
25%
INIS
silicon
100%
electrons
100%
noise
100%
bolometers
100%
devices
37%
power
37%
radiations
25%
antennas
25%
efficiency
12%
levels
12%
data
12%
correlations
12%
doped materials
12%
aluminium
12%
superconductors
12%
variations
12%
islands
12%
streams
12%
optical systems
12%
ghz range
12%
absorption
12%
photons
12%
microwave radiation
12%
apertures
12%
phonons
12%
junctions
12%
charge carriers
12%
field effect transistors
12%
electron-phonon coupling
12%
spectral response
12%
transistor amplifiers
12%
Physics
Bolometer
100%
Antenna
66%
Phonon
66%
Optical Power
33%
Millimeter Wave Radiation
33%
Spectral Sensitivity
33%
Cross Correlation
33%
JFET
33%
Transistor Amplifier
33%
Noise equivalent power
33%