A study of monitoring hydrogen using mesoporous TiO2 synthesized by anodization

Jongyun Moon; Hannu Pekka Hedman; Marianna Kemell; Arho Suominen; Ermei Mäkilä; Hong Kim; Aulis Tuominen; Risto Punkkinen

doi:10.1016/j.snb.2013.05.070

A study of monitoring hydrogen using mesoporous TiO₂ synthesized by anodization

Jongyun Moon^*, Hannu Pekka Hedman, Marianna Kemell, Arho Suominen, Ermei Mäkilä, Hong Kim, Aulis Tuominen, Risto Punkkinen

^*Corresponding author for this work

Not published at VTT

Research output: Contribution to journal › Article › Scientific › peer-review

17 Citations (Scopus)

Abstract

We present a hydrogen sensor using mesoporous TiO₂ film on silicon and its H₂ sensing properties at different conditions. The sensor was formed by anodizing a sputtered Ti layer on silicon and having it annealed for crystallization. The material and electrical characterization included a study of morphology (FESEM), elemental composition (EDS), crystalline structure (XRD) and current-voltage behavior (semiconductor parameter analyzer). The sensor with Pt electrodes showed promising hydrogen sensing properties in air, such as good response to low hydrogen concentration (20-1000 ppm), fast response time of 5 s and recovery time of 125 s at 1000 ppm. The sensor response is shown to be independent toward relative humidity in the testing atmosphere.

Original language	English
Pages (from-to)	246-250
Journal	Sensors and Actuators B: Chemical
Volume	189
DOIs	https://doi.org/10.1016/j.snb.2013.05.070
Publication status	Published - 2013
MoE publication type	A1 Journal article-refereed

Funding

J. Moon gratefully acknowledges Fortum Foundation (B2 grant number 12-118 ). Authors cordially thank Sensorex Oy, Finland, for the use of their facilities in hydrogen testing.

Keywords

Anodization
Gas sensor
Hydrogen
TiO

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.snb.2013.05.070

Cite this

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abstract = "We present a hydrogen sensor using mesoporous TiO2 film on silicon and its H2 sensing properties at different conditions. The sensor was formed by anodizing a sputtered Ti layer on silicon and having it annealed for crystallization. The material and electrical characterization included a study of morphology (FESEM), elemental composition (EDS), crystalline structure (XRD) and current-voltage behavior (semiconductor parameter analyzer). The sensor with Pt electrodes showed promising hydrogen sensing properties in air, such as good response to low hydrogen concentration (20-1000 ppm), fast response time of 5 s and recovery time of 125 s at 1000 ppm. The sensor response is shown to be independent toward relative humidity in the testing atmosphere.",

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AU - Moon, Jongyun

AU - Hedman, Hannu Pekka

AU - Kemell, Marianna

AU - Suominen, Arho

AU - Mäkilä, Ermei

AU - Kim, Hong

AU - Tuominen, Aulis

AU - Punkkinen, Risto

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AB - We present a hydrogen sensor using mesoporous TiO2 film on silicon and its H2 sensing properties at different conditions. The sensor was formed by anodizing a sputtered Ti layer on silicon and having it annealed for crystallization. The material and electrical characterization included a study of morphology (FESEM), elemental composition (EDS), crystalline structure (XRD) and current-voltage behavior (semiconductor parameter analyzer). The sensor with Pt electrodes showed promising hydrogen sensing properties in air, such as good response to low hydrogen concentration (20-1000 ppm), fast response time of 5 s and recovery time of 125 s at 1000 ppm. The sensor response is shown to be independent toward relative humidity in the testing atmosphere.

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