A study on the effect of wire bonding interconnects of BCB capped CPW to CPW on LTCC substrate

S Seok, J Kim, Markku Lahti

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

The effect of wire bonding interconnects between BCB capped CPW on silicon chip and CPW on low temperature cofired ceramic (LTCC) package is presented. The Si chip is attached onto LTCC package using conductive silver epoxy. Two different bond wires, ribbon-wire and normal wire are used for the transition of CPW-CPW between Si chip and LTCC. The test module has been characterized up to 20 GHz. The CPW lines interconnected with normal wire has insertion loss of 0.6 dB at 5 GHz, while the ribbon wired ones show 0.5 dB at the same frequency. Lumped equivalent circuit model has been developed to figure out the behavior of the test module and three-dimensional HFSS electromagnetic simulation has been also carried out
Original languageEnglish
Pages (from-to)1378-1381
JournalMicrowave and Optical Technology Letters
Volume56
Issue number6
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

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wire
Wire
ceramics
Substrates
chips
ribbons
Temperature
modules
Silicon
Insertion losses
Silver
equivalent circuits
insertion loss
Equivalent circuits
silver
electromagnetism
silicon
simulation

Keywords

  • BCB
  • CPW-CPW transition
  • interconnect
  • LTCC
  • wire bonding
  • zero-level package

Cite this

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title = "A study on the effect of wire bonding interconnects of BCB capped CPW to CPW on LTCC substrate",
abstract = "The effect of wire bonding interconnects between BCB capped CPW on silicon chip and CPW on low temperature cofired ceramic (LTCC) package is presented. The Si chip is attached onto LTCC package using conductive silver epoxy. Two different bond wires, ribbon-wire and normal wire are used for the transition of CPW-CPW between Si chip and LTCC. The test module has been characterized up to 20 GHz. The CPW lines interconnected with normal wire has insertion loss of 0.6 dB at 5 GHz, while the ribbon wired ones show 0.5 dB at the same frequency. Lumped equivalent circuit model has been developed to figure out the behavior of the test module and three-dimensional HFSS electromagnetic simulation has been also carried out",
keywords = "BCB, CPW-CPW transition, interconnect, LTCC, wire bonding, zero-level package",
author = "S Seok and J Kim and Markku Lahti",
year = "2014",
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language = "English",
volume = "56",
pages = "1378--1381",
journal = "Microwave and Optical Technology Letters",
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A study on the effect of wire bonding interconnects of BCB capped CPW to CPW on LTCC substrate. / Seok, S; Kim, J; Lahti, Markku.

In: Microwave and Optical Technology Letters, Vol. 56, No. 6, 2014, p. 1378-1381.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - A study on the effect of wire bonding interconnects of BCB capped CPW to CPW on LTCC substrate

AU - Seok, S

AU - Kim, J

AU - Lahti, Markku

PY - 2014

Y1 - 2014

N2 - The effect of wire bonding interconnects between BCB capped CPW on silicon chip and CPW on low temperature cofired ceramic (LTCC) package is presented. The Si chip is attached onto LTCC package using conductive silver epoxy. Two different bond wires, ribbon-wire and normal wire are used for the transition of CPW-CPW between Si chip and LTCC. The test module has been characterized up to 20 GHz. The CPW lines interconnected with normal wire has insertion loss of 0.6 dB at 5 GHz, while the ribbon wired ones show 0.5 dB at the same frequency. Lumped equivalent circuit model has been developed to figure out the behavior of the test module and three-dimensional HFSS electromagnetic simulation has been also carried out

AB - The effect of wire bonding interconnects between BCB capped CPW on silicon chip and CPW on low temperature cofired ceramic (LTCC) package is presented. The Si chip is attached onto LTCC package using conductive silver epoxy. Two different bond wires, ribbon-wire and normal wire are used for the transition of CPW-CPW between Si chip and LTCC. The test module has been characterized up to 20 GHz. The CPW lines interconnected with normal wire has insertion loss of 0.6 dB at 5 GHz, while the ribbon wired ones show 0.5 dB at the same frequency. Lumped equivalent circuit model has been developed to figure out the behavior of the test module and three-dimensional HFSS electromagnetic simulation has been also carried out

KW - BCB

KW - CPW-CPW transition

KW - interconnect

KW - LTCC

KW - wire bonding

KW - zero-level package

U2 - 10.1002/mop.28355

DO - 10.1002/mop.28355

M3 - Article

VL - 56

SP - 1378

EP - 1381

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

IS - 6

ER -