Abstract
The effect of wire bonding interconnects between BCB
capped CPW on silicon chip and CPW on low temperature
cofired ceramic (LTCC) package is presented. The Si chip
is attached onto LTCC package using conductive silver
epoxy. Two different bond wires, ribbon-wire and normal
wire are used for the transition of CPW-CPW between Si
chip and LTCC. The test module has been characterized up
to 20 GHz. The CPW lines interconnected with normal wire
has insertion loss of 0.6 dB at 5 GHz, while the ribbon
wired ones show 0.5 dB at the same frequency. Lumped
equivalent circuit model has been developed to figure out
the behavior of the test module and three-dimensional
HFSS electromagnetic simulation has been also carried out
Original language | English |
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Pages (from-to) | 1378-1381 |
Journal | Microwave and Optical Technology Letters |
Volume | 56 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2014 |
MoE publication type | A1 Journal article-refereed |
Keywords
- BCB
- CPW-CPW transition
- interconnect
- LTCC
- wire bonding
- zero-level package