A study on the effect of wire bonding interconnects of BCB capped CPW to CPW on LTCC substrate

S Seok, J Kim, Markku Lahti

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    The effect of wire bonding interconnects between BCB capped CPW on silicon chip and CPW on low temperature cofired ceramic (LTCC) package is presented. The Si chip is attached onto LTCC package using conductive silver epoxy. Two different bond wires, ribbon-wire and normal wire are used for the transition of CPW-CPW between Si chip and LTCC. The test module has been characterized up to 20 GHz. The CPW lines interconnected with normal wire has insertion loss of 0.6 dB at 5 GHz, while the ribbon wired ones show 0.5 dB at the same frequency. Lumped equivalent circuit model has been developed to figure out the behavior of the test module and three-dimensional HFSS electromagnetic simulation has been also carried out
    Original languageEnglish
    Pages (from-to)1378-1381
    JournalMicrowave and Optical Technology Letters
    Volume56
    Issue number6
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    wire
    Wire
    ceramics
    Substrates
    chips
    ribbons
    Temperature
    modules
    Silicon
    Insertion losses
    Silver
    equivalent circuits
    insertion loss
    Equivalent circuits
    silver
    electromagnetism
    silicon
    simulation

    Keywords

    • BCB
    • CPW-CPW transition
    • interconnect
    • LTCC
    • wire bonding
    • zero-level package

    Cite this

    @article{7689e84b365a4c25ab7a3353c4b473a5,
    title = "A study on the effect of wire bonding interconnects of BCB capped CPW to CPW on LTCC substrate",
    abstract = "The effect of wire bonding interconnects between BCB capped CPW on silicon chip and CPW on low temperature cofired ceramic (LTCC) package is presented. The Si chip is attached onto LTCC package using conductive silver epoxy. Two different bond wires, ribbon-wire and normal wire are used for the transition of CPW-CPW between Si chip and LTCC. The test module has been characterized up to 20 GHz. The CPW lines interconnected with normal wire has insertion loss of 0.6 dB at 5 GHz, while the ribbon wired ones show 0.5 dB at the same frequency. Lumped equivalent circuit model has been developed to figure out the behavior of the test module and three-dimensional HFSS electromagnetic simulation has been also carried out",
    keywords = "BCB, CPW-CPW transition, interconnect, LTCC, wire bonding, zero-level package",
    author = "S Seok and J Kim and Markku Lahti",
    year = "2014",
    doi = "10.1002/mop.28355",
    language = "English",
    volume = "56",
    pages = "1378--1381",
    journal = "Microwave and Optical Technology Letters",
    issn = "0895-2477",
    publisher = "Wiley",
    number = "6",

    }

    A study on the effect of wire bonding interconnects of BCB capped CPW to CPW on LTCC substrate. / Seok, S; Kim, J; Lahti, Markku.

    In: Microwave and Optical Technology Letters, Vol. 56, No. 6, 2014, p. 1378-1381.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - A study on the effect of wire bonding interconnects of BCB capped CPW to CPW on LTCC substrate

    AU - Seok, S

    AU - Kim, J

    AU - Lahti, Markku

    PY - 2014

    Y1 - 2014

    N2 - The effect of wire bonding interconnects between BCB capped CPW on silicon chip and CPW on low temperature cofired ceramic (LTCC) package is presented. The Si chip is attached onto LTCC package using conductive silver epoxy. Two different bond wires, ribbon-wire and normal wire are used for the transition of CPW-CPW between Si chip and LTCC. The test module has been characterized up to 20 GHz. The CPW lines interconnected with normal wire has insertion loss of 0.6 dB at 5 GHz, while the ribbon wired ones show 0.5 dB at the same frequency. Lumped equivalent circuit model has been developed to figure out the behavior of the test module and three-dimensional HFSS electromagnetic simulation has been also carried out

    AB - The effect of wire bonding interconnects between BCB capped CPW on silicon chip and CPW on low temperature cofired ceramic (LTCC) package is presented. The Si chip is attached onto LTCC package using conductive silver epoxy. Two different bond wires, ribbon-wire and normal wire are used for the transition of CPW-CPW between Si chip and LTCC. The test module has been characterized up to 20 GHz. The CPW lines interconnected with normal wire has insertion loss of 0.6 dB at 5 GHz, while the ribbon wired ones show 0.5 dB at the same frequency. Lumped equivalent circuit model has been developed to figure out the behavior of the test module and three-dimensional HFSS electromagnetic simulation has been also carried out

    KW - BCB

    KW - CPW-CPW transition

    KW - interconnect

    KW - LTCC

    KW - wire bonding

    KW - zero-level package

    U2 - 10.1002/mop.28355

    DO - 10.1002/mop.28355

    M3 - Article

    VL - 56

    SP - 1378

    EP - 1381

    JO - Microwave and Optical Technology Letters

    JF - Microwave and Optical Technology Letters

    SN - 0895-2477

    IS - 6

    ER -