A study on the effect of wire bonding interconnects of BCB capped CPW to CPW on LTCC substrate

S Seok, J Kim, Markku Lahti

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    The effect of wire bonding interconnects between BCB capped CPW on silicon chip and CPW on low temperature cofired ceramic (LTCC) package is presented. The Si chip is attached onto LTCC package using conductive silver epoxy. Two different bond wires, ribbon-wire and normal wire are used for the transition of CPW-CPW between Si chip and LTCC. The test module has been characterized up to 20 GHz. The CPW lines interconnected with normal wire has insertion loss of 0.6 dB at 5 GHz, while the ribbon wired ones show 0.5 dB at the same frequency. Lumped equivalent circuit model has been developed to figure out the behavior of the test module and three-dimensional HFSS electromagnetic simulation has been also carried out
    Original languageEnglish
    Pages (from-to)1378-1381
    JournalMicrowave and Optical Technology Letters
    Volume56
    Issue number6
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed

    Keywords

    • BCB
    • CPW-CPW transition
    • interconnect
    • LTCC
    • wire bonding
    • zero-level package

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