A versatile timing microsystem based on wafer-level packaged XTAL/BAW resonators with sub-µw RTC mode and programmable HF clocks

D Ruffieux, N Scolari, F Giroud, T-C Le, S Dalla Piazza, F Staub, K Zoschke, C-A Manier, H Oppermann, Tommi Suni, James Dekker, G Allegato

    Research output: Contribution to journalArticleScientificpeer-review

    13 Citations (Scopus)

    Abstract

    This paper introduces and demonstrates with high yield a novel concept for the packaging under vacuum of tuning fork quartz XTALs on top of a silicon interposer equipped with TSVs. It paves the way to the implementation of a monolithic timing microsystem where the ASIC is part of the housing of a newly designed tiny 131-kHz XTAL to reach extreme module miniaturization (1.5,*,1.1,*,0.7 mm3) and integrity. As this task is still ongoing, an early demonstration of the generic versatile timing module is presented using a chip-on-board approach with standalone conventionally packaged XTAL and BAW resonators. The module achieves 0.4 µW power dissipation and pm 2 ppm stability over {-} 40 circ C to 85 circ C in RTC mode and can deliver on-demand programmable clocks between 1-50 MHz. The latter are obtained either with a RC PLL or after division of the signal obtained from a 2-GHz BAW DCO at a power dissipation of 100 µ W and 5.3 mW, respectively
    Original languageEnglish
    Pages (from-to)212-222
    JournalIEEE Journal of Solid-State Circuits
    Volume49
    Issue number1
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed

    Keywords

    • Hybrid integration
    • MEMS
    • oscillator
    • programme clocks
    • RTC
    • temperature sensor
    • wafer level packaging

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  • Cite this

    Ruffieux, D., Scolari, N., Giroud, F., Le, T-C., Dalla Piazza, S., Staub, F., Zoschke, K., Manier, C-A., Oppermann, H., Suni, T., Dekker, J., & Allegato, G. (2014). A versatile timing microsystem based on wafer-level packaged XTAL/BAW resonators with sub-µw RTC mode and programmable HF clocks. IEEE Journal of Solid-State Circuits, 49(1), 212-222. https://doi.org/10.1109/JSSC.2013.2282111