A W-band RF-MEMS switched LNA in a 70 nm mHEMT process

Shakila Reyaz, Andreas Gustafsson, Carl Samuelsson, Robert Malmqvist, Brice Grandchamp, Pekka Rantakari, Tauno Vähä-Heikkilä

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

This work presents a monolithic integrated reconfigurable active circuit consisting of a W-band RF micro-electro-mechanical-systems (MEMS) Dicke switch network and a wideband low-noise amplifier (LNA) realized in a 70 nm gallium arsenide (GaAs) metamorphic high electron mobility transistor process technology. The RF-MEMS LNA has a measured gain of 10.2-15.6 dB and 1.3-8.2 dB at 79-96 GHz when the Dicke switch is switched ON and OFF, respectively. Compared with the three-stage LNA used in this design the measured in-band noise figure (NF) of MEMS switched LNA is minimum 1.6 dB higher. To the authors' knowledge, the experimental results represent a first time demonstration of a W-band MEMS switched LNA monolithic microwave integrated circuit (MMIC) in a GaAs foundry process with a minimum NF of 5 dB. The proposed novel integration of such MEMS switched MMICs can enable more cost-effective ways to realize high-performance single-chip mm-wave reconfigurable radiometer front-ends for space and security applications, for example.
Original languageEnglish
Pages (from-to)639-646
JournalInternational Journal of RF and Microwave Computer-Aided Engineering
Volume25
Issue number7
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

Fingerprint

Low noise amplifiers
Gallium arsenide
Monolithic microwave integrated circuits
Noise figure
Switches
Broadband amplifiers
High electron mobility transistors
Foundries
Radiometers
Demonstrations
Networks (circuits)
Costs

Keywords

  • low-noise amplifier
  • millimeter wave
  • monolithic microwave integrated circuits
  • radiometer
  • RF micro-electro-mechanical-systems
  • W-band

Cite this

Reyaz, Shakila ; Gustafsson, Andreas ; Samuelsson, Carl ; Malmqvist, Robert ; Grandchamp, Brice ; Rantakari, Pekka ; Vähä-Heikkilä, Tauno. / A W-band RF-MEMS switched LNA in a 70 nm mHEMT process. In: International Journal of RF and Microwave Computer-Aided Engineering. 2015 ; Vol. 25, No. 7. pp. 639-646.
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abstract = "This work presents a monolithic integrated reconfigurable active circuit consisting of a W-band RF micro-electro-mechanical-systems (MEMS) Dicke switch network and a wideband low-noise amplifier (LNA) realized in a 70 nm gallium arsenide (GaAs) metamorphic high electron mobility transistor process technology. The RF-MEMS LNA has a measured gain of 10.2-15.6 dB and 1.3-8.2 dB at 79-96 GHz when the Dicke switch is switched ON and OFF, respectively. Compared with the three-stage LNA used in this design the measured in-band noise figure (NF) of MEMS switched LNA is minimum 1.6 dB higher. To the authors' knowledge, the experimental results represent a first time demonstration of a W-band MEMS switched LNA monolithic microwave integrated circuit (MMIC) in a GaAs foundry process with a minimum NF of 5 dB. The proposed novel integration of such MEMS switched MMICs can enable more cost-effective ways to realize high-performance single-chip mm-wave reconfigurable radiometer front-ends for space and security applications, for example.",
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A W-band RF-MEMS switched LNA in a 70 nm mHEMT process. / Reyaz, Shakila; Gustafsson, Andreas; Samuelsson, Carl; Malmqvist, Robert; Grandchamp, Brice; Rantakari, Pekka; Vähä-Heikkilä, Tauno.

In: International Journal of RF and Microwave Computer-Aided Engineering, Vol. 25, No. 7, 2015, p. 639-646.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Reyaz, Shakila

AU - Gustafsson, Andreas

AU - Samuelsson, Carl

AU - Malmqvist, Robert

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AU - Rantakari, Pekka

AU - Vähä-Heikkilä, Tauno

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N2 - This work presents a monolithic integrated reconfigurable active circuit consisting of a W-band RF micro-electro-mechanical-systems (MEMS) Dicke switch network and a wideband low-noise amplifier (LNA) realized in a 70 nm gallium arsenide (GaAs) metamorphic high electron mobility transistor process technology. The RF-MEMS LNA has a measured gain of 10.2-15.6 dB and 1.3-8.2 dB at 79-96 GHz when the Dicke switch is switched ON and OFF, respectively. Compared with the three-stage LNA used in this design the measured in-band noise figure (NF) of MEMS switched LNA is minimum 1.6 dB higher. To the authors' knowledge, the experimental results represent a first time demonstration of a W-band MEMS switched LNA monolithic microwave integrated circuit (MMIC) in a GaAs foundry process with a minimum NF of 5 dB. The proposed novel integration of such MEMS switched MMICs can enable more cost-effective ways to realize high-performance single-chip mm-wave reconfigurable radiometer front-ends for space and security applications, for example.

AB - This work presents a monolithic integrated reconfigurable active circuit consisting of a W-band RF micro-electro-mechanical-systems (MEMS) Dicke switch network and a wideband low-noise amplifier (LNA) realized in a 70 nm gallium arsenide (GaAs) metamorphic high electron mobility transistor process technology. The RF-MEMS LNA has a measured gain of 10.2-15.6 dB and 1.3-8.2 dB at 79-96 GHz when the Dicke switch is switched ON and OFF, respectively. Compared with the three-stage LNA used in this design the measured in-band noise figure (NF) of MEMS switched LNA is minimum 1.6 dB higher. To the authors' knowledge, the experimental results represent a first time demonstration of a W-band MEMS switched LNA monolithic microwave integrated circuit (MMIC) in a GaAs foundry process with a minimum NF of 5 dB. The proposed novel integration of such MEMS switched MMICs can enable more cost-effective ways to realize high-performance single-chip mm-wave reconfigurable radiometer front-ends for space and security applications, for example.

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