A wide-band on-wafer noise parameter measurement system at 50-75 GHz

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29 Citations (Scopus)

Abstract

A wide-band on-wafer noise parameter measurement system at 50-75 GHz is presented. This measurement system is based on the cold-source method with a computer-controlled waveguide tuner. Calibrations and measurement methods are discussed and measured results for passive and active on-wafer devices are shown over a 50-75 GHz range. An InP high electron-mobility transistor device is used as a test item for the active device. A Monte Carlo analysis to study measurement uncertainties is also shown. The measurement system is a useful tool in the development and verification of device noise models, as well as in device characterization.
Original languageEnglish
Pages (from-to)1489-1495
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Volume51
Issue number5
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

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wafers
broadband
High electron mobility transistors
high electron mobility transistors
Waveguides
Calibration
waveguides

Keywords

  • noise-parameter measurements
  • on-wafer characterization
  • wide-band measurements

Cite this

@article{529a23cd15df4f6e999909c6a123a229,
title = "A wide-band on-wafer noise parameter measurement system at 50-75 GHz",
abstract = "A wide-band on-wafer noise parameter measurement system at 50-75 GHz is presented. This measurement system is based on the cold-source method with a computer-controlled waveguide tuner. Calibrations and measurement methods are discussed and measured results for passive and active on-wafer devices are shown over a 50-75 GHz range. An InP high electron-mobility transistor device is used as a test item for the active device. A Monte Carlo analysis to study measurement uncertainties is also shown. The measurement system is a useful tool in the development and verification of device noise models, as well as in device characterization.",
keywords = "noise-parameter measurements, on-wafer characterization, wide-band measurements",
author = "Mikko Kantanen and Manu Lahdes and Tauno V{\"a}h{\"a}-Heikkil{\"a} and Jussi Tuovinen",
year = "2003",
doi = "10.1109/TMTT.2003.810129",
language = "English",
volume = "51",
pages = "1489--1495",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
number = "5",

}

A wide-band on-wafer noise parameter measurement system at 50-75 GHz. / Kantanen, Mikko; Lahdes, Manu; Vähä-Heikkilä, Tauno; Tuovinen, Jussi.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 51, No. 5, 2003, p. 1489-1495.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - A wide-band on-wafer noise parameter measurement system at 50-75 GHz

AU - Kantanen, Mikko

AU - Lahdes, Manu

AU - Vähä-Heikkilä, Tauno

AU - Tuovinen, Jussi

PY - 2003

Y1 - 2003

N2 - A wide-band on-wafer noise parameter measurement system at 50-75 GHz is presented. This measurement system is based on the cold-source method with a computer-controlled waveguide tuner. Calibrations and measurement methods are discussed and measured results for passive and active on-wafer devices are shown over a 50-75 GHz range. An InP high electron-mobility transistor device is used as a test item for the active device. A Monte Carlo analysis to study measurement uncertainties is also shown. The measurement system is a useful tool in the development and verification of device noise models, as well as in device characterization.

AB - A wide-band on-wafer noise parameter measurement system at 50-75 GHz is presented. This measurement system is based on the cold-source method with a computer-controlled waveguide tuner. Calibrations and measurement methods are discussed and measured results for passive and active on-wafer devices are shown over a 50-75 GHz range. An InP high electron-mobility transistor device is used as a test item for the active device. A Monte Carlo analysis to study measurement uncertainties is also shown. The measurement system is a useful tool in the development and verification of device noise models, as well as in device characterization.

KW - noise-parameter measurements

KW - on-wafer characterization

KW - wide-band measurements

U2 - 10.1109/TMTT.2003.810129

DO - 10.1109/TMTT.2003.810129

M3 - Article

VL - 51

SP - 1489

EP - 1495

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 5

ER -