@inproceedings{00713a0d9d2c4f84a0bf7e3b3ae0769d,
title = "A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver",
abstract = "This paper presents a wideband GaAs low-noise amplifier (LNA) that operates as a pre-amplifier for a CMOS receiver, with a background motivation of a chiplet-level integration. A GaAs pre-amplifier will improve the total gain and noise performance of the receiver. The paper presents a comprehensive analytical method for wideband matching - a design methodology for optimum matching networks. As a result, this LNA features a particularly wide bandwidth from 60 to 100 GHz with an average gain of 15 dB. The LNA was implemented with 0.1-µm GaAs pHEMT technology. The circuit occupies a die area of 1 mm-, noise figure is 7.2-8.5 dB at 60-100 GHz with a gain of 12-21 dB and DC power consumption of 20 mW.",
keywords = "Gallium arsenide (GaAs), low-noise amplifier (LNA), millimeter-wave (mm-wave), wideband",
author = "Kaisa Ryynanen and Kari Stadius and Jan Bergman and Goksu Kaval and Gregor Lasser and Vessen Vassilev and Christian Fager and Jussi Ryynanen",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 31st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2024 ; Conference date: 18-11-2024 Through 20-11-2024",
year = "2024",
doi = "10.1109/ICECS61496.2024.10848860",
language = "English",
isbn = "979-8-3503-7721-7",
series = "Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems",
publisher = "IEEE Institute of Electrical and Electronic Engineers",
booktitle = "2024 31st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2024",
address = "United States",
}