Absence of substrate roughness effects on an all-printed organic transistor operating at one volt

Nikolai Kaihovirta (Corresponding Author), Daniel Tobjörk, Tapio Mäkelä, Ronald Österbacka

Research output: Contribution to journalArticleScientificpeer-review

21 Citations (Scopus)

Abstract

A hygroscopic insulator transistor (HIFET) operating at 1V was manufactured using roll-to-roll techniques on a rough, low-cost plastic substrate. The effects of the substrate roughness on the active channel were studied by using two different plastic substrates and comparing HIFETs and organic field-effect transistors (OFETs). We found that the HIFET, as opposed to OFETs, is rather insensitive to changes in the roughness of plastic substrates. Hence, a robust feature of ion modulated transistors is shown.
Original languageEnglish
Article number053302
JournalApplied Physics Letters
Volume93
Issue number5
DOIs
Publication statusPublished - 2008
MoE publication typeA1 Journal article-refereed

Fingerprint

transistors
roughness
plastics
field effect transistors
insulators
ions

Keywords

  • field effect transistors
  • organic compounds
  • plastics
  • surface roughness

Cite this

Kaihovirta, Nikolai ; Tobjörk, Daniel ; Mäkelä, Tapio ; Österbacka, Ronald. / Absence of substrate roughness effects on an all-printed organic transistor operating at one volt. In: Applied Physics Letters. 2008 ; Vol. 93, No. 5.
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Absence of substrate roughness effects on an all-printed organic transistor operating at one volt. / Kaihovirta, Nikolai (Corresponding Author); Tobjörk, Daniel; Mäkelä, Tapio; Österbacka, Ronald.

In: Applied Physics Letters, Vol. 93, No. 5, 053302, 2008.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Kaihovirta, Nikolai

AU - Tobjörk, Daniel

AU - Mäkelä, Tapio

AU - Österbacka, Ronald

PY - 2008

Y1 - 2008

N2 - A hygroscopic insulator transistor (HIFET) operating at 1V was manufactured using roll-to-roll techniques on a rough, low-cost plastic substrate. The effects of the substrate roughness on the active channel were studied by using two different plastic substrates and comparing HIFETs and organic field-effect transistors (OFETs). We found that the HIFET, as opposed to OFETs, is rather insensitive to changes in the roughness of plastic substrates. Hence, a robust feature of ion modulated transistors is shown.

AB - A hygroscopic insulator transistor (HIFET) operating at 1V was manufactured using roll-to-roll techniques on a rough, low-cost plastic substrate. The effects of the substrate roughness on the active channel were studied by using two different plastic substrates and comparing HIFETs and organic field-effect transistors (OFETs). We found that the HIFET, as opposed to OFETs, is rather insensitive to changes in the roughness of plastic substrates. Hence, a robust feature of ion modulated transistors is shown.

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KW - organic compounds

KW - plastics

KW - surface roughness

U2 - 10.1063/1.2958225

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JO - Applied Physics Letters

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