A hygroscopic insulator transistor (HIFET) operating at 1V was manufactured using roll-to-roll techniques on a rough, low-cost plastic substrate. The effects of the substrate roughness on the active channel were studied by using two different plastic substrates and comparing HIFETs and organic field-effect transistors (OFETs). We found that the HIFET, as opposed to OFETs, is rather insensitive to changes in the roughness of plastic substrates. Hence, a robust feature of ion modulated transistors is shown.
- field effect transistors
- organic compounds
- surface roughness
Kaihovirta, N., Tobjörk, D., Mäkelä, T., & Österbacka, R. (2008). Absence of substrate roughness effects on an all-printed organic transistor operating at one volt. Applied Physics Letters, 93(5), . https://doi.org/10.1063/1.2958225