Absence of substrate roughness effects on an all-printed organic transistor operating at one volt

Nikolai Kaihovirta (Corresponding Author), Daniel Tobjörk, Tapio Mäkelä, Ronald Österbacka

    Research output: Contribution to journalArticleScientificpeer-review

    22 Citations (Scopus)

    Abstract

    A hygroscopic insulator transistor (HIFET) operating at 1V was manufactured using roll-to-roll techniques on a rough, low-cost plastic substrate. The effects of the substrate roughness on the active channel were studied by using two different plastic substrates and comparing HIFETs and organic field-effect transistors (OFETs). We found that the HIFET, as opposed to OFETs, is rather insensitive to changes in the roughness of plastic substrates. Hence, a robust feature of ion modulated transistors is shown.
    Original languageEnglish
    Article number053302
    JournalApplied Physics Letters
    Volume93
    Issue number5
    DOIs
    Publication statusPublished - 2008
    MoE publication typeA1 Journal article-refereed

    Keywords

    • field effect transistors
    • organic compounds
    • plastics
    • surface roughness

    Fingerprint Dive into the research topics of 'Absence of substrate roughness effects on an all-printed organic transistor operating at one volt'. Together they form a unique fingerprint.

    Cite this