Absence of substrate roughness effects on an all-printed organic transistor operating at one volt

Nikolai Kaihovirta (Corresponding Author), Daniel Tobjörk, Tapio Mäkelä, Ronald Österbacka

Research output: Contribution to journalArticleScientificpeer-review

22 Citations (Scopus)

Abstract

A hygroscopic insulator transistor (HIFET) operating at 1V was manufactured using roll-to-roll techniques on a rough, low-cost plastic substrate. The effects of the substrate roughness on the active channel were studied by using two different plastic substrates and comparing HIFETs and organic field-effect transistors (OFETs). We found that the HIFET, as opposed to OFETs, is rather insensitive to changes in the roughness of plastic substrates. Hence, a robust feature of ion modulated transistors is shown.
Original languageEnglish
Article number053302
JournalApplied Physics Letters
Volume93
Issue number5
DOIs
Publication statusPublished - 2008
MoE publication typeA1 Journal article-refereed

Keywords

  • field effect transistors
  • organic compounds
  • plastics
  • surface roughness

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