AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description

Jan Saijets; Jan Holmberg; Markku Åberg

doi:10.1109/NORCHP.2007.4481056

AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

The AC behavior of absorbed parasitic series resistances of MOSFET models were compared to the conventional lumped resistance approach both theoretically and with real device values. The result suggested that absorbing the parasitic channel series resistances into the current description decreases the AC accuracy of the MOS model compared to conventional model with lumped resistances. Comparison were made with the input, output and gain and backward gain characteristics and it seems that the largest differences can be seen in the input and output behavior. The simple theoretical study of the two modeling approaches is confirmed by empirical comparisons of an 80 x 1.0 ƒÝm x 90 nm NMOS device characteristics up to 110 GHz

Original language	English
Title of host publication	25th Norchip Conference, NORCHIP
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	134-137
ISBN (Print)	1424415160, 9781424415168
DOIs	https://doi.org/10.1109/NORCHP.2007.4481056
Publication status	Published - 2007
MoE publication type	A4 Article in a conference publication
Event	25th Norchip Conference, Norchip 2007 - Alborg, Denmark Duration: 19 Nov 2007 → 20 Nov 2007

Conference

Conference	25th Norchip Conference, Norchip 2007
Abbreviated title	Norchip 2007
Country/Territory	Denmark
City	Alborg
Period	19/11/07 → 20/11/07

Keywords

RF CMOS
modeling

Access to Document

10.1109/NORCHP.2007.4481056

Cite this

@inproceedings{e9c4d0d63dcc4759b6f8dee64f007780,

title = "AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description",

abstract = "The AC behavior of absorbed parasitic series resistances of MOSFET models were compared to the conventional lumped resistance approach both theoretically and with real device values. The result suggested that absorbing the parasitic channel series resistances into the current description decreases the AC accuracy of the MOS model compared to conventional model with lumped resistances. Comparison were made with the input, output and gain and backward gain characteristics and it seems that the largest differences can be seen in the input and output behavior. The simple theoretical study of the two modeling approaches is confirmed by empirical comparisons of an 80 x 1.0 ƒ{\'Y}m x 90 nm NMOS device characteristics up to 110 GHz",

keywords = "RF CMOS, modeling",

author = "Jan Saijets and Jan Holmberg and Markku {\AA}berg",

year = "2007",

doi = "10.1109/NORCHP.2007.4481056",

language = "English",

isbn = "1424415160",

pages = "134--137",

booktitle = "25th Norchip Conference, NORCHIP",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "25th Norchip Conference, Norchip 2007, Norchip 2007 ; Conference date: 19-11-2007 Through 20-11-2007",

}

Saijets, J , Holmberg, J & Åberg, M 2007, AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description. in 25th Norchip Conference, NORCHIP. IEEE Institute of Electrical and Electronic Engineers, pp. 134-137, 25th Norchip Conference, Norchip 2007, Alborg, Denmark, 19/11/07. https://doi.org/10.1109/NORCHP.2007.4481056

AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description. / Saijets, Jan ; Holmberg, Jan; Åberg, Markku.
25th Norchip Conference, NORCHIP. IEEE Institute of Electrical and Electronic Engineers, 2007. p. 134-137.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description

AU - Saijets, Jan

AU - Holmberg, Jan

AU - Åberg, Markku

PY - 2007

Y1 - 2007

N2 - The AC behavior of absorbed parasitic series resistances of MOSFET models were compared to the conventional lumped resistance approach both theoretically and with real device values. The result suggested that absorbing the parasitic channel series resistances into the current description decreases the AC accuracy of the MOS model compared to conventional model with lumped resistances. Comparison were made with the input, output and gain and backward gain characteristics and it seems that the largest differences can be seen in the input and output behavior. The simple theoretical study of the two modeling approaches is confirmed by empirical comparisons of an 80 x 1.0 ƒÝm x 90 nm NMOS device characteristics up to 110 GHz

AB - The AC behavior of absorbed parasitic series resistances of MOSFET models were compared to the conventional lumped resistance approach both theoretically and with real device values. The result suggested that absorbing the parasitic channel series resistances into the current description decreases the AC accuracy of the MOS model compared to conventional model with lumped resistances. Comparison were made with the input, output and gain and backward gain characteristics and it seems that the largest differences can be seen in the input and output behavior. The simple theoretical study of the two modeling approaches is confirmed by empirical comparisons of an 80 x 1.0 ƒÝm x 90 nm NMOS device characteristics up to 110 GHz

KW - RF CMOS

KW - modeling

U2 - 10.1109/NORCHP.2007.4481056

DO - 10.1109/NORCHP.2007.4481056

M3 - Conference article in proceedings

SN - 1424415160

SN - 9781424415168

SP - 134

EP - 137

BT - 25th Norchip Conference, NORCHIP

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 25th Norchip Conference, Norchip 2007

Y2 - 19 November 2007 through 20 November 2007

ER -

AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description

Abstract

Conference

Keywords

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