AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description

Jan Saijets, Jan Holmberg, Markku Åberg

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    The AC behavior of absorbed parasitic series resistances of MOSFET models were compared to the conventional lumped resistance approach both theoretically and with real device values. The result suggested that absorbing the parasitic channel series resistances into the current description decreases the AC accuracy of the MOS model compared to conventional model with lumped resistances. Comparison were made with the input, output and gain and backward gain characteristics and it seems that the largest differences can be seen in the input and output behavior. The simple theoretical study of the two modeling approaches is confirmed by empirical comparisons of an 80 x 1.0 ƒÝm x 90 nm NMOS device characteristics up to 110 GHz
    Original languageEnglish
    Title of host publication25th Norchip Conference, NORCHIP
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages134-137
    ISBN (Print)1424415160, 9781424415168
    DOIs
    Publication statusPublished - 2007
    MoE publication typeA4 Article in a conference publication
    Event25th Norchip Conference, Norchip 2007 - Alborg, Denmark
    Duration: 19 Nov 200720 Nov 2007

    Conference

    Conference25th Norchip Conference, Norchip 2007
    Abbreviated titleNorchip 2007
    CountryDenmark
    CityAlborg
    Period19/11/0720/11/07

    Keywords

    • RF CMOS
    • modeling

    Cite this

    Saijets, J., Holmberg, J., & Åberg, M. (2007). AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description. In 25th Norchip Conference, NORCHIP (pp. 134-137). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/NORCHP.2007.4481056
    Saijets, Jan ; Holmberg, Jan ; Åberg, Markku. / AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description. 25th Norchip Conference, NORCHIP. IEEE Institute of Electrical and Electronic Engineers , 2007. pp. 134-137
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    title = "AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description",
    abstract = "The AC behavior of absorbed parasitic series resistances of MOSFET models were compared to the conventional lumped resistance approach both theoretically and with real device values. The result suggested that absorbing the parasitic channel series resistances into the current description decreases the AC accuracy of the MOS model compared to conventional model with lumped resistances. Comparison were made with the input, output and gain and backward gain characteristics and it seems that the largest differences can be seen in the input and output behavior. The simple theoretical study of the two modeling approaches is confirmed by empirical comparisons of an 80 x 1.0 ƒ{\'Y}m x 90 nm NMOS device characteristics up to 110 GHz",
    keywords = "RF CMOS, modeling",
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    Saijets, J, Holmberg, J & Åberg, M 2007, AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description. in 25th Norchip Conference, NORCHIP. IEEE Institute of Electrical and Electronic Engineers , pp. 134-137, 25th Norchip Conference, Norchip 2007, Alborg, Denmark, 19/11/07. https://doi.org/10.1109/NORCHP.2007.4481056

    AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description. / Saijets, Jan; Holmberg, Jan; Åberg, Markku.

    25th Norchip Conference, NORCHIP. IEEE Institute of Electrical and Electronic Engineers , 2007. p. 134-137.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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    AU - Holmberg, Jan

    AU - Åberg, Markku

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    N2 - The AC behavior of absorbed parasitic series resistances of MOSFET models were compared to the conventional lumped resistance approach both theoretically and with real device values. The result suggested that absorbing the parasitic channel series resistances into the current description decreases the AC accuracy of the MOS model compared to conventional model with lumped resistances. Comparison were made with the input, output and gain and backward gain characteristics and it seems that the largest differences can be seen in the input and output behavior. The simple theoretical study of the two modeling approaches is confirmed by empirical comparisons of an 80 x 1.0 ƒÝm x 90 nm NMOS device characteristics up to 110 GHz

    AB - The AC behavior of absorbed parasitic series resistances of MOSFET models were compared to the conventional lumped resistance approach both theoretically and with real device values. The result suggested that absorbing the parasitic channel series resistances into the current description decreases the AC accuracy of the MOS model compared to conventional model with lumped resistances. Comparison were made with the input, output and gain and backward gain characteristics and it seems that the largest differences can be seen in the input and output behavior. The simple theoretical study of the two modeling approaches is confirmed by empirical comparisons of an 80 x 1.0 ƒÝm x 90 nm NMOS device characteristics up to 110 GHz

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    Saijets J, Holmberg J, Åberg M. AC characteristics of the MOSFET parasitic channel series resistances when absorbed into the current description. In 25th Norchip Conference, NORCHIP. IEEE Institute of Electrical and Electronic Engineers . 2007. p. 134-137 https://doi.org/10.1109/NORCHP.2007.4481056