AC modeling of the MOSFET channel series resistance

Jan Saijets, Jan Holmberg, Markku Åberg

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

The metal-oxide-semiconductor field-effect transistor (MOSFET) alternating-current (AC) behavior with two different parasitic channel series resistance descriptions were studied. An absorbed parasitic series resistances approach was compared to the conventional lumped resistance approach both theoretically and with real device values. The results suggested that absorbing the parasitic channel series resistances into the current description decreases the AC accuracy of the MOSFET model compared to conventional model with lumped resistances. The input admittance, output impedance, gain and backward gain characteristics were studied and the largest differences emerged in the input and output behavior. The theoretical study is confirmed by empirical comparisons of an 80 × 1.0 μm × 90 nm n-channel metal-oxide-semiconductor (NMOS) device characteristics up to 110 GHz.
Original languageEnglish
Pages (from-to)3-10
Number of pages8
JournalAnalog Integrated Circuits and Signal Processing
Volume58
Issue number1
DOIs
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed
Event25th NORCHIP conference - Aalborg, Denmark
Duration: 19 Nov 200720 Nov 2007

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MOSFET devices
MOS devices

Keywords

  • CMOS
  • Modeling
  • MOSFET
  • Parasitic series resistances
  • RF

Cite this

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title = "AC modeling of the MOSFET channel series resistance",
abstract = "The metal-oxide-semiconductor field-effect transistor (MOSFET) alternating-current (AC) behavior with two different parasitic channel series resistance descriptions were studied. An absorbed parasitic series resistances approach was compared to the conventional lumped resistance approach both theoretically and with real device values. The results suggested that absorbing the parasitic channel series resistances into the current description decreases the AC accuracy of the MOSFET model compared to conventional model with lumped resistances. The input admittance, output impedance, gain and backward gain characteristics were studied and the largest differences emerged in the input and output behavior. The theoretical study is confirmed by empirical comparisons of an 80 × 1.0 μm × 90 nm n-channel metal-oxide-semiconductor (NMOS) device characteristics up to 110 GHz.",
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AC modeling of the MOSFET channel series resistance. / Saijets, Jan; Holmberg, Jan; Åberg, Markku.

In: Analog Integrated Circuits and Signal Processing, Vol. 58, No. 1, 2009, p. 3-10.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - AC modeling of the MOSFET channel series resistance

AU - Saijets, Jan

AU - Holmberg, Jan

AU - Åberg, Markku

PY - 2009

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AB - The metal-oxide-semiconductor field-effect transistor (MOSFET) alternating-current (AC) behavior with two different parasitic channel series resistance descriptions were studied. An absorbed parasitic series resistances approach was compared to the conventional lumped resistance approach both theoretically and with real device values. The results suggested that absorbing the parasitic channel series resistances into the current description decreases the AC accuracy of the MOSFET model compared to conventional model with lumped resistances. The input admittance, output impedance, gain and backward gain characteristics were studied and the largest differences emerged in the input and output behavior. The theoretical study is confirmed by empirical comparisons of an 80 × 1.0 μm × 90 nm n-channel metal-oxide-semiconductor (NMOS) device characteristics up to 110 GHz.

KW - CMOS

KW - Modeling

KW - MOSFET

KW - Parasitic series resistances

KW - RF

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DO - 10.1007/s10470-008-9180-y

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