Abstract
The metal-oxide-semiconductor field-effect transistor (MOSFET)
alternating-current (AC) behavior with two different parasitic channel
series resistance descriptions were studied. An absorbed parasitic
series resistances approach was compared to the conventional lumped
resistance approach both theoretically and with real device values. The
results suggested that absorbing the parasitic channel series
resistances into the current description decreases the AC accuracy of
the MOSFET model compared to conventional model with lumped resistances.
The input admittance, output impedance, gain and backward gain
characteristics were studied and the largest differences emerged in the
input and output behavior. The theoretical study is confirmed by
empirical comparisons of an 80 × 1.0 μm × 90 nm n-channel
metal-oxide-semiconductor (NMOS) device characteristics up to 110 GHz.
Original language | English |
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Pages (from-to) | 3-10 |
Number of pages | 8 |
Journal | Analog Integrated Circuits and Signal Processing |
Volume | 58 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2009 |
MoE publication type | A1 Journal article-refereed |
Event | 25th NORCHIP conference - Aalborg, Denmark Duration: 19 Nov 2007 → 20 Nov 2007 |
Keywords
- CMOS
- Modeling
- MOSFET
- Parasitic series resistances
- RF