AC modeling of the MOSFET channel series resistance

Jan Saijets, Jan Holmberg, Markku Åberg

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    The metal-oxide-semiconductor field-effect transistor (MOSFET) alternating-current (AC) behavior with two different parasitic channel series resistance descriptions were studied. An absorbed parasitic series resistances approach was compared to the conventional lumped resistance approach both theoretically and with real device values. The results suggested that absorbing the parasitic channel series resistances into the current description decreases the AC accuracy of the MOSFET model compared to conventional model with lumped resistances. The input admittance, output impedance, gain and backward gain characteristics were studied and the largest differences emerged in the input and output behavior. The theoretical study is confirmed by empirical comparisons of an 80 × 1.0 μm × 90 nm n-channel metal-oxide-semiconductor (NMOS) device characteristics up to 110 GHz.
    Original languageEnglish
    Pages (from-to)3-10
    Number of pages8
    JournalAnalog Integrated Circuits and Signal Processing
    Volume58
    Issue number1
    DOIs
    Publication statusPublished - 2009
    MoE publication typeA1 Journal article-refereed
    Event25th NORCHIP conference - Aalborg, Denmark
    Duration: 19 Nov 200720 Nov 2007

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    MOSFET devices
    MOS devices

    Keywords

    • CMOS
    • Modeling
    • MOSFET
    • Parasitic series resistances
    • RF

    Cite this

    @article{4a6c0ddb0694496fb86575fd295fc617,
    title = "AC modeling of the MOSFET channel series resistance",
    abstract = "The metal-oxide-semiconductor field-effect transistor (MOSFET) alternating-current (AC) behavior with two different parasitic channel series resistance descriptions were studied. An absorbed parasitic series resistances approach was compared to the conventional lumped resistance approach both theoretically and with real device values. The results suggested that absorbing the parasitic channel series resistances into the current description decreases the AC accuracy of the MOSFET model compared to conventional model with lumped resistances. The input admittance, output impedance, gain and backward gain characteristics were studied and the largest differences emerged in the input and output behavior. The theoretical study is confirmed by empirical comparisons of an 80 × 1.0 μm × 90 nm n-channel metal-oxide-semiconductor (NMOS) device characteristics up to 110 GHz.",
    keywords = "CMOS, Modeling, MOSFET, Parasitic series resistances, RF",
    author = "Jan Saijets and Jan Holmberg and Markku {\AA}berg",
    year = "2009",
    doi = "10.1007/s10470-008-9180-y",
    language = "English",
    volume = "58",
    pages = "3--10",
    journal = "Analog Integrated Circuits and Signal Processing",
    issn = "0925-1030",
    publisher = "Springer",
    number = "1",

    }

    AC modeling of the MOSFET channel series resistance. / Saijets, Jan; Holmberg, Jan; Åberg, Markku.

    In: Analog Integrated Circuits and Signal Processing, Vol. 58, No. 1, 2009, p. 3-10.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - AC modeling of the MOSFET channel series resistance

    AU - Saijets, Jan

    AU - Holmberg, Jan

    AU - Åberg, Markku

    PY - 2009

    Y1 - 2009

    N2 - The metal-oxide-semiconductor field-effect transistor (MOSFET) alternating-current (AC) behavior with two different parasitic channel series resistance descriptions were studied. An absorbed parasitic series resistances approach was compared to the conventional lumped resistance approach both theoretically and with real device values. The results suggested that absorbing the parasitic channel series resistances into the current description decreases the AC accuracy of the MOSFET model compared to conventional model with lumped resistances. The input admittance, output impedance, gain and backward gain characteristics were studied and the largest differences emerged in the input and output behavior. The theoretical study is confirmed by empirical comparisons of an 80 × 1.0 μm × 90 nm n-channel metal-oxide-semiconductor (NMOS) device characteristics up to 110 GHz.

    AB - The metal-oxide-semiconductor field-effect transistor (MOSFET) alternating-current (AC) behavior with two different parasitic channel series resistance descriptions were studied. An absorbed parasitic series resistances approach was compared to the conventional lumped resistance approach both theoretically and with real device values. The results suggested that absorbing the parasitic channel series resistances into the current description decreases the AC accuracy of the MOSFET model compared to conventional model with lumped resistances. The input admittance, output impedance, gain and backward gain characteristics were studied and the largest differences emerged in the input and output behavior. The theoretical study is confirmed by empirical comparisons of an 80 × 1.0 μm × 90 nm n-channel metal-oxide-semiconductor (NMOS) device characteristics up to 110 GHz.

    KW - CMOS

    KW - Modeling

    KW - MOSFET

    KW - Parasitic series resistances

    KW - RF

    U2 - 10.1007/s10470-008-9180-y

    DO - 10.1007/s10470-008-9180-y

    M3 - Article

    VL - 58

    SP - 3

    EP - 10

    JO - Analog Integrated Circuits and Signal Processing

    JF - Analog Integrated Circuits and Signal Processing

    SN - 0925-1030

    IS - 1

    ER -