Acoustic phonon propagation in ultra-thin Si membranes under biaxial stress field

B. Graczykowski (Corresponding Author), J. Gomis-Bresco, F. Alzina, J. Reparaz, Andrey Shchepetov, Mika Prunnila, Jouni Ahopelto, C.M. Sotomayor Torres

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    Abstract

    We report on stress induced changes in the dispersion relations of acoustic phonons propagating in 27 nm thick single crystalline Si membranes. The static tensile stress (up to 0.3 GPa) acting on the Si membranes was achieved using an additional strain compensating silicon nitride frame. Dispersion relations of thermally activated hypersonic phonons were measured by means of Brillouin light scattering spectroscopy. The theory of Lamb wave propagation is developed for anisotropic materials subjected to an external static stress field. The dispersion relations were calculated using the elastic continuum approximation and taking into account the acousto-elastic effect. We find an excellent agreement between the theoretical and the experimental dispersion relations.
    Original languageEnglish
    Article number073024
    JournalNew Journal of Physics
    Volume16
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed

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    Keywords

    • acoustic phonons
    • Brillouin light scattering
    • ultra-thin Si membranes

    Cite this

    Graczykowski, B., Gomis-Bresco, J., Alzina, F., Reparaz, J., Shchepetov, A., Prunnila, M., Ahopelto, J., & Sotomayor Torres, C. M. (2014). Acoustic phonon propagation in ultra-thin Si membranes under biaxial stress field. New Journal of Physics, 16, [073024]. https://doi.org/10.1088/1367-2630/16/7/073024