Active cold load MMICs for Ka-, V-, and W-bands

Mikko Kantanen, Ernst Weissbrodt, Jussi Varis, Arnulf Leuther, Matthias Seelmann-Eggebert, Markus Rösch, Michael Schlecthweg, Torsti Poutanen, Iiro Sundberg, Matti Kaisti, Miikka Altti, Petri Jukkala, Petri Piironen

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.
    Original languageEnglish
    Pages (from-to)742-747
    JournalIET Microwaves, Antennas and Propagation
    Volume9
    Issue number8
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA1 Journal article-refereed

    Keywords

    • HEMT integrated circuits
    • MMIC
    • MIMIC

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  • Cite this

    Kantanen, M., Weissbrodt, E., Varis, J., Leuther, A., Seelmann-Eggebert, M., Rösch, M., Schlecthweg, M., Poutanen, T., Sundberg, I., Kaisti, M., Altti, M., Jukkala, P., & Piironen, P. (2015). Active cold load MMICs for Ka-, V-, and W-bands. IET Microwaves, Antennas and Propagation, 9(8), 742-747. https://doi.org/10.1049/iet-map.2014.0243