Active cold load MMICs for Ka-, V-, and W-bands

Mikko Kantanen, Ernst Weissbrodt, Jussi Varis, Arnulf Leuther, Matthias Seelmann-Eggebert, Markus Rösch, Michael Schlecthweg, Torsti Poutanen, Iiro Sundberg, Matti Kaisti, Miikka Altti, Petri Jukkala, Petri Piironen

    Research output: Contribution to journalArticleScientificpeer-review

    4 Citations (Scopus)


    Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.
    Original languageEnglish
    Pages (from-to)742-747
    JournalIET Microwaves, Antennas and Propagation
    Issue number8
    Publication statusPublished - 2015
    MoE publication typeA1 Journal article-refereed


    • HEMT integrated circuits
    • MMIC
    • MIMIC


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