Active cold load MMICs for Ka-, V-, and W-bands

Mikko Kantanen, Ernst Weissbrodt, Jussi Varis, Arnulf Leuther, Matthias Seelmann-Eggebert, Markus Rösch, Michael Schlecthweg, Torsti Poutanen, Iiro Sundberg, Matti Kaisti, Miikka Altti, Petri Jukkala, Petri Piironen

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.
    Original languageEnglish
    Pages (from-to)742-747
    JournalIET Microwaves, Antennas and Propagation
    Volume9
    Issue number8
    DOIs
    Publication statusPublished - 2015
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Monolithic microwave integrated circuits
    Networks (circuits)
    High electron mobility transistors
    Millimeter waves
    Temperature

    Keywords

    • HEMT integrated circuits
    • MMIC
    • MIMIC

    Cite this

    Kantanen, M., Weissbrodt, E., Varis, J., Leuther, A., Seelmann-Eggebert, M., Rösch, M., ... Piironen, P. (2015). Active cold load MMICs for Ka-, V-, and W-bands. IET Microwaves, Antennas and Propagation, 9(8), 742-747. https://doi.org/10.1049/iet-map.2014.0243
    Kantanen, Mikko ; Weissbrodt, Ernst ; Varis, Jussi ; Leuther, Arnulf ; Seelmann-Eggebert, Matthias ; Rösch, Markus ; Schlecthweg, Michael ; Poutanen, Torsti ; Sundberg, Iiro ; Kaisti, Matti ; Altti, Miikka ; Jukkala, Petri ; Piironen, Petri. / Active cold load MMICs for Ka-, V-, and W-bands. In: IET Microwaves, Antennas and Propagation. 2015 ; Vol. 9, No. 8. pp. 742-747.
    @article{e9dce67284354f578b2814a04f00c343,
    title = "Active cold load MMICs for Ka-, V-, and W-bands",
    abstract = "Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.",
    keywords = "HEMT integrated circuits, MMIC, MIMIC",
    author = "Mikko Kantanen and Ernst Weissbrodt and Jussi Varis and Arnulf Leuther and Matthias Seelmann-Eggebert and Markus R{\"o}sch and Michael Schlecthweg and Torsti Poutanen and Iiro Sundberg and Matti Kaisti and Miikka Altti and Petri Jukkala and Petri Piironen",
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    journal = "IET Microwaves, Antennas and Propagation",
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    Kantanen, M, Weissbrodt, E, Varis, J, Leuther, A, Seelmann-Eggebert, M, Rösch, M, Schlecthweg, M, Poutanen, T, Sundberg, I, Kaisti, M, Altti, M, Jukkala, P & Piironen, P 2015, 'Active cold load MMICs for Ka-, V-, and W-bands', IET Microwaves, Antennas and Propagation, vol. 9, no. 8, pp. 742-747. https://doi.org/10.1049/iet-map.2014.0243

    Active cold load MMICs for Ka-, V-, and W-bands. / Kantanen, Mikko; Weissbrodt, Ernst; Varis, Jussi; Leuther, Arnulf; Seelmann-Eggebert, Matthias; Rösch, Markus; Schlecthweg, Michael; Poutanen, Torsti; Sundberg, Iiro; Kaisti, Matti; Altti, Miikka; Jukkala, Petri; Piironen, Petri.

    In: IET Microwaves, Antennas and Propagation, Vol. 9, No. 8, 2015, p. 742-747.

    Research output: Contribution to journalArticleScientificpeer-review

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    T1 - Active cold load MMICs for Ka-, V-, and W-bands

    AU - Kantanen, Mikko

    AU - Weissbrodt, Ernst

    AU - Varis, Jussi

    AU - Leuther, Arnulf

    AU - Seelmann-Eggebert, Matthias

    AU - Rösch, Markus

    AU - Schlecthweg, Michael

    AU - Poutanen, Torsti

    AU - Sundberg, Iiro

    AU - Kaisti, Matti

    AU - Altti, Miikka

    AU - Jukkala, Petri

    AU - Piironen, Petri

    N1 - Project code: 42416

    PY - 2015

    Y1 - 2015

    N2 - Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.

    AB - Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.

    KW - HEMT integrated circuits

    KW - MMIC

    KW - MIMIC

    U2 - 10.1049/iet-map.2014.0243

    DO - 10.1049/iet-map.2014.0243

    M3 - Article

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    JO - IET Microwaves, Antennas and Propagation

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    ER -