Abstract
Three active cold load circuits operating at
millimetre-wave frequencies are presented. The circuits
have been manufactured using 100 nm metamorphic high
electron mobility transistor technology. On-wafer
measurements of noise temperature and match are
presented. Measured noise temperatures are 75 K, 141 K,
and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively.
Measured reflection coefficients are better than -19 dB
for all designs.
Original language | English |
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Pages (from-to) | 742-747 |
Journal | IET Microwaves, Antennas and Propagation |
Volume | 9 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2015 |
MoE publication type | A1 Journal article-refereed |
Keywords
- HEMT integrated circuits
- MMIC
- MIMIC