Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.
|Journal||IET Microwaves, Antennas and Propagation|
|Publication status||Published - 2015|
|MoE publication type||A1 Journal article-refereed|
- HEMT integrated circuits