Active cold load MMICs for Ka-, V-, and W-bands

Mikko Kantanen, Ernst Weissbrodt, Jussi Varis, Arnulf Leuther, Matthias Seelmann-Eggebert, Markus Rösch, Michael Schlecthweg, Torsti Poutanen, Iiro Sundberg, Matti Kaisti, Miikka Altti, Petri Jukkala, Petri Piironen

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.
Original languageEnglish
Pages (from-to)742-747
JournalIET Microwaves, Antennas and Propagation
Volume9
Issue number8
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

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Monolithic microwave integrated circuits
Networks (circuits)
High electron mobility transistors
Millimeter waves
Temperature

Keywords

  • HEMT integrated circuits
  • MMIC
  • MIMIC

Cite this

Kantanen, M., Weissbrodt, E., Varis, J., Leuther, A., Seelmann-Eggebert, M., Rösch, M., ... Piironen, P. (2015). Active cold load MMICs for Ka-, V-, and W-bands. IET Microwaves, Antennas and Propagation, 9(8), 742-747. https://doi.org/10.1049/iet-map.2014.0243
Kantanen, Mikko ; Weissbrodt, Ernst ; Varis, Jussi ; Leuther, Arnulf ; Seelmann-Eggebert, Matthias ; Rösch, Markus ; Schlecthweg, Michael ; Poutanen, Torsti ; Sundberg, Iiro ; Kaisti, Matti ; Altti, Miikka ; Jukkala, Petri ; Piironen, Petri. / Active cold load MMICs for Ka-, V-, and W-bands. In: IET Microwaves, Antennas and Propagation. 2015 ; Vol. 9, No. 8. pp. 742-747.
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abstract = "Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.",
keywords = "HEMT integrated circuits, MMIC, MIMIC",
author = "Mikko Kantanen and Ernst Weissbrodt and Jussi Varis and Arnulf Leuther and Matthias Seelmann-Eggebert and Markus R{\"o}sch and Michael Schlecthweg and Torsti Poutanen and Iiro Sundberg and Matti Kaisti and Miikka Altti and Petri Jukkala and Petri Piironen",
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Kantanen, M, Weissbrodt, E, Varis, J, Leuther, A, Seelmann-Eggebert, M, Rösch, M, Schlecthweg, M, Poutanen, T, Sundberg, I, Kaisti, M, Altti, M, Jukkala, P & Piironen, P 2015, 'Active cold load MMICs for Ka-, V-, and W-bands', IET Microwaves, Antennas and Propagation, vol. 9, no. 8, pp. 742-747. https://doi.org/10.1049/iet-map.2014.0243

Active cold load MMICs for Ka-, V-, and W-bands. / Kantanen, Mikko; Weissbrodt, Ernst; Varis, Jussi; Leuther, Arnulf; Seelmann-Eggebert, Matthias; Rösch, Markus; Schlecthweg, Michael; Poutanen, Torsti; Sundberg, Iiro; Kaisti, Matti; Altti, Miikka; Jukkala, Petri; Piironen, Petri.

In: IET Microwaves, Antennas and Propagation, Vol. 9, No. 8, 2015, p. 742-747.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Active cold load MMICs for Ka-, V-, and W-bands

AU - Kantanen, Mikko

AU - Weissbrodt, Ernst

AU - Varis, Jussi

AU - Leuther, Arnulf

AU - Seelmann-Eggebert, Matthias

AU - Rösch, Markus

AU - Schlecthweg, Michael

AU - Poutanen, Torsti

AU - Sundberg, Iiro

AU - Kaisti, Matti

AU - Altti, Miikka

AU - Jukkala, Petri

AU - Piironen, Petri

N1 - Project code: 42416

PY - 2015

Y1 - 2015

N2 - Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.

AB - Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.

KW - HEMT integrated circuits

KW - MMIC

KW - MIMIC

U2 - 10.1049/iet-map.2014.0243

DO - 10.1049/iet-map.2014.0243

M3 - Article

VL - 9

SP - 742

EP - 747

JO - IET Microwaves, Antennas and Propagation

JF - IET Microwaves, Antennas and Propagation

SN - 1751-8725

IS - 8

ER -