Active cold load MMICs for Ka-, V-, and W-bands

Mikko Kantanen; Ernst Weissbrodt; Jussi Varis; Arnulf Leuther; Matthias Seelmann-Eggebert; Markus Rösch; Michael Schlecthweg; Torsti Poutanen; Iiro Sundberg; Matti Kaisti; Miikka Altti; Petri Jukkala; Petri Piironen

doi:10.1049/iet-map.2014.0243

Active cold load MMICs for Ka-, V-, and W-bands

Mikko Kantanen
, Ernst Weissbrodt
, Jussi Varis
, Arnulf Leuther
, Matthias Seelmann-Eggebert
, Markus Rösch
, Michael Schlecthweg
, Torsti Poutanen
, Iiro Sundberg
, Matti Kaisti
, Miikka Altti
, Petri Jukkala
, Petri Piironen

Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
DA-Group
European Space Research and Technology Centre (ESTEC)

Research output: Contribution to journal › Article › Scientific › peer-review

7 Citations (Scopus)

Abstract

Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.

Original language	English
Pages (from-to)	742-747
Journal	IET Microwaves, Antennas and Propagation
Volume	9
Issue number	8
DOIs	https://doi.org/10.1049/iet-map.2014.0243
Publication status	Published - 2015
MoE publication type	A1 Journal article-refereed

Keywords

HEMT integrated circuits
MMIC
MIMIC

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10.1049/iet-map.2014.0243

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title = "Active cold load MMICs for Ka-, V-, and W-bands",

abstract = "Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.",

keywords = "HEMT integrated circuits, MMIC, MIMIC",

author = "Mikko Kantanen and Ernst Weissbrodt and Jussi Varis and Arnulf Leuther and Matthias Seelmann-Eggebert and Markus R{\"o}sch and Michael Schlecthweg and Torsti Poutanen and Iiro Sundberg and Matti Kaisti and Miikka Altti and Petri Jukkala and Petri Piironen",

note = "Project code: 42416 ",

year = "2015",

doi = "10.1049/iet-map.2014.0243",

language = "English",

volume = "9",

pages = "742--747",

journal = "IET Microwaves, Antennas and Propagation",

issn = "1751-8725",

publisher = "Wiley",

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}

TY - JOUR

T1 - Active cold load MMICs for Ka-, V-, and W-bands

AU - Kantanen, Mikko

AU - Weissbrodt, Ernst

AU - Varis, Jussi

AU - Leuther, Arnulf

AU - Seelmann-Eggebert, Matthias

AU - Rösch, Markus

AU - Schlecthweg, Michael

AU - Poutanen, Torsti

AU - Sundberg, Iiro

AU - Kaisti, Matti

AU - Altti, Miikka

AU - Jukkala, Petri

AU - Piironen, Petri

N1 - Project code: 42416

PY - 2015

Y1 - 2015

N2 - Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.

AB - Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs.

KW - HEMT integrated circuits

KW - MMIC

KW - MIMIC

U2 - 10.1049/iet-map.2014.0243

DO - 10.1049/iet-map.2014.0243

M3 - Article

SN - 1751-8725

VL - 9

SP - 742

EP - 747

JO - IET Microwaves, Antennas and Propagation

JF - IET Microwaves, Antennas and Propagation

IS - 8

ER -

Active cold load MMICs for Ka-, V-, and W-bands

Abstract

Keywords

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