TY - JOUR
T1 - Active cold load MMICs for Ka-, V-, and W-bands
AU - Kantanen, Mikko
AU - Weissbrodt, Ernst
AU - Varis, Jussi
AU - Leuther, Arnulf
AU - Seelmann-Eggebert, Matthias
AU - Rösch, Markus
AU - Schlecthweg, Michael
AU - Poutanen, Torsti
AU - Sundberg, Iiro
AU - Kaisti, Matti
AU - Altti, Miikka
AU - Jukkala, Petri
AU - Piironen, Petri
N1 - Project code: 42416
PY - 2015
Y1 - 2015
N2 - Three active cold load circuits operating at
millimetre-wave frequencies are presented. The circuits
have been manufactured using 100 nm metamorphic high
electron mobility transistor technology. On-wafer
measurements of noise temperature and match are
presented. Measured noise temperatures are 75 K, 141 K,
and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively.
Measured reflection coefficients are better than -19 dB
for all designs.
AB - Three active cold load circuits operating at
millimetre-wave frequencies are presented. The circuits
have been manufactured using 100 nm metamorphic high
electron mobility transistor technology. On-wafer
measurements of noise temperature and match are
presented. Measured noise temperatures are 75 K, 141 K,
and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively.
Measured reflection coefficients are better than -19 dB
for all designs.
KW - HEMT integrated circuits
KW - MMIC
KW - MIMIC
U2 - 10.1049/iet-map.2014.0243
DO - 10.1049/iet-map.2014.0243
M3 - Article
SN - 1751-8725
VL - 9
SP - 742
EP - 747
JO - IET Microwaves, Antennas and Propagation
JF - IET Microwaves, Antennas and Propagation
IS - 8
ER -