Adhesion characteristics of Pd/Ge Ohmic contacts on GaAs/AlGaAs multilayer structures

T. S. Abhilash, Ch Ravi Kumar, G. Rajaram

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review


The adhesion characteristics of Pd/Ge Ohmic contact metallization on GaAs/AlGaAs multilayer structure are studied using scratch tests in a Nano-indentor. The effect of annealing on the scratch resistance of the metallization was measured and correlated with contact resistance and surface roughness. The scratch depth and qualitative evaluation of adhesion show best adhesion/wear resistance for films annealed at 300°C. It is found that the minimum contact resistance is also observed after annealing at this temperature. Profiles of scratch cross section at a constant force of 200 μUN indicate that, the scratches do not extend into the substrate for anneals at temperature <400°C. The optimum contact resistance of Pd/Ge contact is ∼(0.75+0.10Ω-mm) which is 15 times larger than those for optimized AuGe/Ni/Au contacts (0.05±0.01Ω-mm). The measured surface roughness is ∼2.0±0.5nm, which is ∼10 times lower than that of AuGe/Ni/Au based contact that gave the lowest contact resistance.

Original languageEnglish
Title of host publicationSolid State Physics - Proceedings of the 55th DAE Solid State Physics Symposium 2010
PublisherAmerican Institute of Physics (AIP)
Number of pages2
EditionPART A
ISBN (Print)978-0-7354-0905-7
Publication statusPublished - 2011
MoE publication typeA4 Article in a conference publication
Event55th DAE Solid State Physics Symposium 2010 - Manipal, India
Duration: 26 Dec 201030 Dec 2010

Publication series

SeriesAIP Conference Proceedings
NumberPART A


Conference55th DAE Solid State Physics Symposium 2010


  • Adhesion
  • Contact resistance
  • GaAs/AlGaAs
  • Ohmic contact
  • Pd/Ge
  • Surface roughness


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