Advanced integration of high permittivity oxides for rf-modules by layer transfer method

Tommi Riekkinen, Tomi Mattila, Jyrki Molarius, Markku Ylilammi

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientific


In this work we will present a novel approach to eliminate the disadvantages of the parallel-plate capacitor fabrication methods and to provide an advanced fabrication method for integrated RF devices. Namely using layer transfer techniques and utilize an auxiliary substrate on which the high permitivity insulating layer or a corresponding middle layer is first deposited. The film growth can be done in optimal conditions to obtain high quality RF devices, e.g. high growth temperatures and the highly oxidizing growth atmosphere typical for ferroelectric material (e.g. BaSrTiO3) deposition can be used without the risk of electrode deterioration or destruction. Chosen oxide is first grown and then the top and bottom electrodes are essentially deposited after layer transfer. Therefore, a wide variety of metals, including Cu, can be used for electrodes as metal oxidation and/or high-temperature grain growth are no more an issue.
Original languageEnglish
Title of host publicationProceedings of the 19th International Symposium on Integrated Ferroelectrics (ISIF2007)
Subtitle of host publicationCD
Publication statusPublished - 2007
MoE publication typeB3 Non-refereed article in conference proceedings
Event19th International Symposium on Integrated Ferroelectrics, ISIF2007 - Bordeaux, France
Duration: 8 May 200711 May 2007


Conference19th International Symposium on Integrated Ferroelectrics, ISIF2007
Abbreviated titleISIF2007


  • Integration of ferroelectrics
  • layer transfer
  • RF-varactors
  • RF-modules

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