Advanced integration of high permittivity oxides for rf-modules by layer transfer method

In this work we will present a novel approach to eliminate the disadvantages of the parallel-plate capacitor fabrication methods and to provide an advanced fabrication method for integrated RF devices. Namely using layer transfer techniques and utilize an auxiliary substrate on which the high permitivity insulating layer or a corresponding middle layer is first deposited. The film growth can be done in optimal conditions to obtain high quality RF devices, e.g. high growth temperatures and the highly oxidizing growth atmosphere typical for ferroelectric material (e.g. BaSrTiO3) deposition can be used without the risk of electrode deterioration or destruction. Chosen oxide is first grown and then the top and bottom electrodes are essentially deposited after layer transfer. Therefore, a wide variety of metals, including Cu, can be used for electrodes as metal oxidation and/or high-temperature grain growth are no more an issue.