ALD coating of porous silicon

Kestutis Grigoras, J. Keskinen, Elina Yli-Rantala, S. Laakso, H. Välimäki, P. Kauranen, Jouni Ahopelto, Mika Prunnila

Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsScientific

Abstract

Atomic layer deposition of thin TiN layer inside the porous silicon electrodes improves conductivity and passivates surface of porous silicon. This improves capacitance and stability of porous silicon based supercapacitors.
Original languageEnglish
Title of host publicationBALD2014 Abstract book
Publication statusPublished - 2014
Event12th International Baltic Conference on Atomic Layer Deposition, Baltic ALD 2014 - Helsinki, Finland
Duration: 12 May 201413 May 2014
Conference number: 12
http://www.aldcoe.fi/bald2014/program.pdf (Program)
http://www.aldcoe.fi/bald2014/posters.pdf (Posters)

Conference

Conference12th International Baltic Conference on Atomic Layer Deposition, Baltic ALD 2014
Abbreviated titleBaltic ALD 2014
CountryFinland
CityHelsinki
Period12/05/1413/05/14
OtherAbstracts reviewed and published.
Internet address

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Keywords

  • porous silicon
  • ALD
  • supercapacitor

Cite this

Grigoras, K., Keskinen, J., Yli-Rantala, E., Laakso, S., Välimäki, H., Kauranen, P., Ahopelto, J., & Prunnila, M. (2014). ALD coating of porous silicon. In BALD2014 Abstract book