All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Leo Bourdet; Louis Hutin; Benoit Bertrand; Andrea Corna; Heorhii Bohuslavskyi; Anthony Amisse; Alessandro Crippa; Romain Maurand; BARRAUD Sylvain; Matias Urdampilleta; Christopher Bauerle; Tristan Meunier; marc sanquer; xavier jehl; Silvano De Franceschi; Yann-Michel Niquet; Maud Vinet

doi:10.1109/ted.2018.2870115

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Leo Bourdet
, Louis Hutin
, Benoit Bertrand
, Andrea Corna
, Heorhii Bohuslavskyi
, Anthony Amisse
, Alessandro Crippa
, Romain Maurand
, BARRAUD Sylvain
, Matias Urdampilleta
, Christopher Bauerle
, Tristan Meunier
, marc sanquer
, xavier jehl
, Silvano De Franceschi
, Yann-Michel Niquet
, Maud Vinet

Not published at VTT

Laboratoire d'électronique des technologies de l'information (LETI)
Institut Néel
Grenoble Alpes University
Institute for Nanoscience and Cryogenics (INAC)

Research output: Contribution to journal › Article › Scientific › peer-review

15 Citations (Scopus)

Abstract

We fabricated quantum dot devices using a standard SOI CMOS process flow and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to intervalley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the tradeoff between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range.

Original language	English
Pages (from-to)	5151-5156
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	11
DOIs	https://doi.org/10.1109/ted.2018.2870115
Publication status	Published - Nov 2018
MoE publication type	A1 Journal article-refereed

Funding

This work was supported in part by EU through the Project MOS-QUITO under Grant 688539, in part by the Marie Curie Fellowship through the Horizon 2020 Program, in part by the French National Research Agency through Project IDEX UGA under Grant ANR-15-IDEX-0002, and in part by CMOSQSPIN under Grant ANR-17-CE24-0009. The review of this paper was arranged by Editor C. Monzio Compagnoni. (Corresponding author: Louis Hutin.) L. Bourdet and Y.-M. Niquet are with Universit\u00E9 Grenoble Alpes, F-38000 Grenoble, France, and also with the CEA, INAC-MEM, F-38054 Grenoble, France (e-mail: [email protected]; [email protected]).

Keywords

CMOS
quantum bit (qubit)
quantum information
spins

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10.1109/ted.2018.2870115

Cite this

Bourdet, L., Hutin, L., Bertrand, B., Corna, A., Bohuslavskyi, H., Amisse, A., Crippa, A., Maurand, R., Sylvain, BARRAUD., Urdampilleta, M., Bauerle, C., Meunier, T., sanquer, M., jehl, X., Franceschi, S. D., Niquet, Y.-M., & Vinet, M. (2018). All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology. IEEE Transactions on Electron Devices, 65(11), 5151-5156. https://doi.org/10.1109/ted.2018.2870115

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title = "All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology",

abstract = "We fabricated quantum dot devices using a standard SOI CMOS process flow and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to intervalley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the tradeoff between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range.",

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Bourdet, L, Hutin, L, Bertrand, B, Corna, A, Bohuslavskyi, H, Amisse, A, Crippa, A, Maurand, R, Sylvain, BARRAUD, Urdampilleta, M, Bauerle, C, Meunier, T, sanquer, M, jehl, X, Franceschi, SD, Niquet, Y-M & Vinet, M 2018, 'All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology', IEEE Transactions on Electron Devices, vol. 65, no. 11, pp. 5151-5156. https://doi.org/10.1109/ted.2018.2870115

TY - JOUR

T1 - All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

AU - Bourdet, Leo

AU - Hutin, Louis

AU - Bertrand, Benoit

AU - Corna, Andrea

AU - Bohuslavskyi, Heorhii

AU - Amisse, Anthony

AU - Crippa, Alessandro

AU - Maurand, Romain

AU - Sylvain, BARRAUD

AU - Urdampilleta, Matias

AU - Bauerle, Christopher

AU - Meunier, Tristan

AU - sanquer, marc

AU - jehl, xavier

AU - Franceschi, Silvano De

AU - Niquet, Yann-Michel

AU - Vinet, Maud

PY - 2018/11

Y1 - 2018/11

N2 - We fabricated quantum dot devices using a standard SOI CMOS process flow and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to intervalley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the tradeoff between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range.

AB - We fabricated quantum dot devices using a standard SOI CMOS process flow and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to intervalley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the tradeoff between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range.

KW - CMOS

KW - quantum bit (qubit)

KW - quantum information

KW - spins

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U2 - 10.1109/ted.2018.2870115

DO - 10.1109/ted.2018.2870115

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SN - 0018-9383

VL - 65

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EP - 5156

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

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