TY - JOUR
T1 - All-parylene flexible wafer-scale graphene thin film transistor
AU - Kim, Maria
AU - Mackenzie, David M.A.
AU - Kim, Wonjae
AU - Isakov, Kirill
AU - Lipsanen, Harri
N1 - Funding Information:
The research leading to these results received funding from the European Union Horizon 2020 Programme under grant agreement 696656 and 785219. We acknowledge also support from Academy of Finland under projects #1502002 and #13298297. Authors wishing to acknowledge assistance and encouragement colleagues Sanna Arpiainen and Miika Soikkeli from VTT Technical Research Center of Finland. This work was undertaken at the Micronova, Nanofabrication Center of Aalto University.
PY - 2021/6/15
Y1 - 2021/6/15
N2 - Graphene is an ideal candidate as a component of flexible/wearable electronics due to its two-dimensional nature and low gate bias requirements for high quality devices. However, the proven methods for fabrication of graphene thin film transistors (TFTs) on fixed substrates involve using a sacrificial polymer layer to transfer graphene to a desired surface have led to mixed results for flexible devices. Here, by using the same polymer layer (parylene C) for both graphene transfer and the flexible substrate itself, we produced graphene TFTs on the wafer-scale requiring less than |2 V| gate bias and with high mechanical resilience of 30,000 bending cycles.
AB - Graphene is an ideal candidate as a component of flexible/wearable electronics due to its two-dimensional nature and low gate bias requirements for high quality devices. However, the proven methods for fabrication of graphene thin film transistors (TFTs) on fixed substrates involve using a sacrificial polymer layer to transfer graphene to a desired surface have led to mixed results for flexible devices. Here, by using the same polymer layer (parylene C) for both graphene transfer and the flexible substrate itself, we produced graphene TFTs on the wafer-scale requiring less than |2 V| gate bias and with high mechanical resilience of 30,000 bending cycles.
KW - Flexible electronics
KW - Flexible gate dielectric
KW - Graphene
KW - Parylene C
KW - TFT
KW - Thin film transistor
KW - Two-dimensional materials
UR - http://www.scopus.com/inward/record.url?scp=85102480762&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2021.149410
DO - 10.1016/j.apsusc.2021.149410
M3 - Article
AN - SCOPUS:85102480762
SN - 0169-4332
VL - 551
JO - Applied Surface Science
JF - Applied Surface Science
M1 - 149410
ER -