All-parylene flexible wafer-scale graphene thin film transistor

Maria Kim; David M.A. Mackenzie; Wonjae Kim; Kirill Isakov; Harri Lipsanen

doi:10.1016/j.apsusc.2021.149410

All-parylene flexible wafer-scale graphene thin film transistor

Maria Kim^*
, David M.A. Mackenzie
, Wonjae Kim
, Kirill Isakov
, Harri Lipsanen

^*Corresponding author for this work

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

23 Citations (Scopus)

Abstract

Graphene is an ideal candidate as a component of flexible/wearable electronics due to its two-dimensional nature and low gate bias requirements for high quality devices. However, the proven methods for fabrication of graphene thin film transistors (TFTs) on fixed substrates involve using a sacrificial polymer layer to transfer graphene to a desired surface have led to mixed results for flexible devices. Here, by using the same polymer layer (parylene C) for both graphene transfer and the flexible substrate itself, we produced graphene TFTs on the wafer-scale requiring less than |2 V| gate bias and with high mechanical resilience of 30,000 bending cycles.

Original language	English
Article number	149410
Number of pages	6
Journal	Applied Surface Science
Volume	551
DOIs	https://doi.org/10.1016/j.apsusc.2021.149410
Publication status	Published - 15 Jun 2021
MoE publication type	A1 Journal article-refereed

Funding

The research leading to these results received funding from the European Union Horizon 2020 Programme under grant agreement 696656 and 785219. We acknowledge also support from Academy of Finland under projects #1502002 and #13298297.

Keywords

Flexible electronics
Flexible gate dielectric
Graphene
Parylene C
TFT
Thin film transistor
Two-dimensional materials

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abstract = "Graphene is an ideal candidate as a component of flexible/wearable electronics due to its two-dimensional nature and low gate bias requirements for high quality devices. However, the proven methods for fabrication of graphene thin film transistors (TFTs) on fixed substrates involve using a sacrificial polymer layer to transfer graphene to a desired surface have led to mixed results for flexible devices. Here, by using the same polymer layer (parylene C) for both graphene transfer and the flexible substrate itself, we produced graphene TFTs on the wafer-scale requiring less than |2 V| gate bias and with high mechanical resilience of 30,000 bending cycles.",

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AU - Kim, Maria

AU - Mackenzie, David M.A.

AU - Kim, Wonjae

AU - Isakov, Kirill

AU - Lipsanen, Harri

PY - 2021/6/15

Y1 - 2021/6/15

N2 - Graphene is an ideal candidate as a component of flexible/wearable electronics due to its two-dimensional nature and low gate bias requirements for high quality devices. However, the proven methods for fabrication of graphene thin film transistors (TFTs) on fixed substrates involve using a sacrificial polymer layer to transfer graphene to a desired surface have led to mixed results for flexible devices. Here, by using the same polymer layer (parylene C) for both graphene transfer and the flexible substrate itself, we produced graphene TFTs on the wafer-scale requiring less than |2 V| gate bias and with high mechanical resilience of 30,000 bending cycles.

AB - Graphene is an ideal candidate as a component of flexible/wearable electronics due to its two-dimensional nature and low gate bias requirements for high quality devices. However, the proven methods for fabrication of graphene thin film transistors (TFTs) on fixed substrates involve using a sacrificial polymer layer to transfer graphene to a desired surface have led to mixed results for flexible devices. Here, by using the same polymer layer (parylene C) for both graphene transfer and the flexible substrate itself, we produced graphene TFTs on the wafer-scale requiring less than |2 V| gate bias and with high mechanical resilience of 30,000 bending cycles.

KW - Flexible electronics

KW - Flexible gate dielectric

KW - Graphene

KW - Parylene C

KW - TFT

KW - Thin film transistor

KW - Two-dimensional materials

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DO - 10.1016/j.apsusc.2021.149410

M3 - Article

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SN - 0169-4332

VL - 551

JO - Applied Surface Science

JF - Applied Surface Science

M1 - 149410

ER -

All-parylene flexible wafer-scale graphene thin film transistor

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Keywords

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