Abstract
We show HIFETs fabricated completely by printing methods
in ambient air on a low-cost plastic substrate (Mylarr
A). In this work the ink-jet printing (IJP) method was
used for printing all electrodes, while the semiconductor
and insulator layers (for which patterning is not
necessary) were applied with the roll-to-roll reverse
gravure coating (RGC) technique. IJP is a low-cost
flexible non-contact direct roll-to-roll compatible
printing technique that produces patterns at high
resolution (1-100 =m) with low material consumption. The
RGC technique, on the other hand, is not used for
patterning, but has the advantage of producing thin
homogeneous layers for a wide range of ink viscosities.
Original language | English |
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Publication status | Published - 2009 |
MoE publication type | Not Eligible |
Event | XLIII Annual Conference of the Finnish Physical Society - Espoo, Finland Duration: 12 Mar 2009 → 14 Mar 2009 |
Conference
Conference | XLIII Annual Conference of the Finnish Physical Society |
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Country/Territory | Finland |
City | Espoo |
Period | 12/03/09 → 14/03/09 |
Keywords
- roll-to-roll
- organic transistor
- all-printed