We show HIFETs fabricated completely by printing methods in ambient air on a low-cost plastic substrate (Mylarr A). In this work the ink-jet printing (IJP) method was used for printing all electrodes, while the semiconductor and insulator layers (for which patterning is not necessary) were applied with the roll-to-roll reverse gravure coating (RGC) technique. IJP is a low-cost flexible non-contact direct roll-to-roll compatible printing technique that produces patterns at high resolution (1-100 =m) with low material consumption. The RGC technique, on the other hand, is not used for patterning, but has the advantage of producing thin homogeneous layers for a wide range of ink viscosities.
|Publication status||Published - 2009|
|MoE publication type||Not Eligible|
|Event||XLIII Annual Conference of the Finnish Physical Society - Espoo, Finland|
Duration: 12 Mar 2009 → 14 Mar 2009
|Conference||XLIII Annual Conference of the Finnish Physical Society|
|Period||12/03/09 → 14/03/09|
- organic transistor