AlN metal-semiconductor field-effect transistors using Si-ion implantation

Hironori Okumura; Sami Suihkonen; Jori Lemettinen; Akira Uedono; Yuhao Zhang; Daniel Piedra; Tomás Palacios

doi:10.7567/JJAP.57.04FR11

AlN metal-semiconductor field-effect transistors using Si-ion implantation

Hironori Okumura^*
, Sami Suihkonen
, Jori Lemettinen
, Akira Uedono
, Yuhao Zhang
, Daniel Piedra
, Tomás Palacios

^*Corresponding author for this work

Not published at VTT

University of Tsukuba
MIT Massachusetts Institute of Technology
Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

64 Citations (Scopus)

Abstract

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230°C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250°C. The off-state breakdown voltage is 2370V for drain-to-gate spacing of 25μm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

Original language	English
Article number	04FR11
Journal	Japanese Journal of Applied Physics
Volume	57
Issue number	4
DOIs	https://doi.org/10.7567/JJAP.57.04FR11
Publication status	Published - 1 Apr 2018
MoE publication type	A1 Journal article-refereed

Funding

This work was supported by JSPS KAKENHI Grant Numbers 16H06424 and 17K14110, and the ONR PECASE program, monitored by Dr. Paul Maki, S. Suihkonen, and J. Lemettinen acknowledge the financial support of the Academy of Finland (Grant 297916) and the Foundation for Aalto University Science and Technology. A part of the research was performed at the OtaNano-Micronova Nano-fabrication Centre of Aalto University.

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abstract = "We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230°C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250°C. The off-state breakdown voltage is 2370V for drain-to-gate spacing of 25μm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.",

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AU - Okumura, Hironori

AU - Suihkonen, Sami

AU - Lemettinen, Jori

AU - Uedono, Akira

AU - Zhang, Yuhao

AU - Piedra, Daniel

AU - Palacios, Tomás

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N2 - We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230°C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250°C. The off-state breakdown voltage is 2370V for drain-to-gate spacing of 25μm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

AB - We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230°C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250°C. The off-state breakdown voltage is 2370V for drain-to-gate spacing of 25μm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

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AlN metal-semiconductor field-effect transistors using Si-ion implantation

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