Al2O3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

Zhen Zhu (Corresponding Author), Saoussen Merdes (Corresponding Author), Oili M.E. Ylivaara, Kenichiro Mizohata, Mikko J. Heikkilä, Hele Savin

Research output: Contribution to journalArticleScientificpeer-review

Abstract

In this article, a combined H2O thermal atomic layer deposition of Al2O3 with in situ N2 plasma treatment process at 90 °C for encapsulation applications is reported. The effect of process parameters on the growth behavior and properties of Al2O3 thin films, such as elemental composition, residual stress, moisture permeation barrier ability, density, and roughness, is investigated. Optimization of plasma exposure time gives films with a low impurity (≈3.8 at% for hydrogen, ≈0.17 at% for carbon, and ≈0.51 at% for nitrogen), a high mass density (≈3.1 g cm−3), and a low tensile residual stress (≈160 MPa). A water vapor transmission rate of 2.9 × 10−3 g m−2 day−1 is obtained for polyethylene naphthalate substrates coated with 4-nm-thick Al2O3 films.

Original languageEnglish
Article number1900237
JournalPhysica Status Solidi A: Applications and Materials Science
Volume217
Issue number8
DOIs
Publication statusPublished - 1 Apr 2020
MoE publication typeA1 Journal article-refereed

Keywords

  • AlO
  • atomic layer deposition
  • plasma
  • radicals
  • water vapor transmission rate
  • OtaNano

Fingerprint Dive into the research topics of 'Al<sub>2</sub>O<sub>3</sub> Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications'. Together they form a unique fingerprint.

  • Equipment

  • Cite this