Al2O3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

Zhen Zhu (Corresponding Author), Saoussen Merdes (Corresponding Author), Oili M.E. Ylivaara, Kenichiro Mizohata, Mikko J. Heikkilä, Hele Savin

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    In this article, a combined H2O thermal atomic layer deposition of Al2O3 with in situ N2 plasma treatment process at 90 °C for encapsulation applications is reported. The effect of process parameters on the growth behavior and properties of Al2O3 thin films, such as elemental composition, residual stress, moisture permeation barrier ability, density, and roughness, is investigated. Optimization of plasma exposure time gives films with a low impurity (≈3.8 at% for hydrogen, ≈0.17 at% for carbon, and ≈0.51 at% for nitrogen), a high mass density (≈3.1 g cm−3), and a low tensile residual stress (≈160 MPa). A water vapor transmission rate of 2.9 × 10−3 g m−2 day−1 is obtained for polyethylene naphthalate substrates coated with 4-nm-thick Al2O3 films.

    Original languageEnglish
    Article number1900237
    JournalPhysica Status Solidi (A) Applications and Materials Science
    DOIs
    Publication statusAccepted/In press - 12 Sep 2019
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Plasma Gases
    Plasma deposition
    Atomic layer deposition
    thermal plasmas
    atomic layer epitaxy
    Encapsulation
    residual stress
    Residual stresses
    Plasmas
    Thin films
    Steam
    Polyethylene
    thin films
    tensile stress
    Thick films
    Permeation
    Tensile stress
    moisture
    Water vapor
    thick films

    Keywords

    • AlO
    • atomic layer deposition
    • plasma
    • radicals
    • water vapor transmission rate

    Cite this

    @article{3df9e435a2274a28b5d81ecdb6cd90fe,
    title = "Al2O3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications",
    abstract = "In this article, a combined H2O thermal atomic layer deposition of Al2O3 with in situ N2 plasma treatment process at 90 °C for encapsulation applications is reported. The effect of process parameters on the growth behavior and properties of Al2O3 thin films, such as elemental composition, residual stress, moisture permeation barrier ability, density, and roughness, is investigated. Optimization of plasma exposure time gives films with a low impurity (≈3.8 at{\%} for hydrogen, ≈0.17 at{\%} for carbon, and ≈0.51 at{\%} for nitrogen), a high mass density (≈3.1 g cm−3), and a low tensile residual stress (≈160 MPa). A water vapor transmission rate of 2.9 × 10−3 g m−2 day−1 is obtained for polyethylene naphthalate substrates coated with 4-nm-thick Al2O3 films.",
    keywords = "AlO, atomic layer deposition, plasma, radicals, water vapor transmission rate",
    author = "Zhen Zhu and Saoussen Merdes and Ylivaara, {Oili M.E.} and Kenichiro Mizohata and Heikkil{\"a}, {Mikko J.} and Hele Savin",
    year = "2019",
    month = "9",
    day = "12",
    doi = "10.1002/pssa.201900237",
    language = "English",
    journal = "Physica Status Solidi A: Applications and Materials Science",
    issn = "1862-6300",
    publisher = "Wiley",

    }

    Al2O3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications. / Zhu, Zhen (Corresponding Author); Merdes, Saoussen (Corresponding Author); Ylivaara, Oili M.E.; Mizohata, Kenichiro; Heikkilä, Mikko J.; Savin, Hele.

    In: Physica Status Solidi (A) Applications and Materials Science, 12.09.2019.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Al2O3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

    AU - Zhu, Zhen

    AU - Merdes, Saoussen

    AU - Ylivaara, Oili M.E.

    AU - Mizohata, Kenichiro

    AU - Heikkilä, Mikko J.

    AU - Savin, Hele

    PY - 2019/9/12

    Y1 - 2019/9/12

    N2 - In this article, a combined H2O thermal atomic layer deposition of Al2O3 with in situ N2 plasma treatment process at 90 °C for encapsulation applications is reported. The effect of process parameters on the growth behavior and properties of Al2O3 thin films, such as elemental composition, residual stress, moisture permeation barrier ability, density, and roughness, is investigated. Optimization of plasma exposure time gives films with a low impurity (≈3.8 at% for hydrogen, ≈0.17 at% for carbon, and ≈0.51 at% for nitrogen), a high mass density (≈3.1 g cm−3), and a low tensile residual stress (≈160 MPa). A water vapor transmission rate of 2.9 × 10−3 g m−2 day−1 is obtained for polyethylene naphthalate substrates coated with 4-nm-thick Al2O3 films.

    AB - In this article, a combined H2O thermal atomic layer deposition of Al2O3 with in situ N2 plasma treatment process at 90 °C for encapsulation applications is reported. The effect of process parameters on the growth behavior and properties of Al2O3 thin films, such as elemental composition, residual stress, moisture permeation barrier ability, density, and roughness, is investigated. Optimization of plasma exposure time gives films with a low impurity (≈3.8 at% for hydrogen, ≈0.17 at% for carbon, and ≈0.51 at% for nitrogen), a high mass density (≈3.1 g cm−3), and a low tensile residual stress (≈160 MPa). A water vapor transmission rate of 2.9 × 10−3 g m−2 day−1 is obtained for polyethylene naphthalate substrates coated with 4-nm-thick Al2O3 films.

    KW - AlO

    KW - atomic layer deposition

    KW - plasma

    KW - radicals

    KW - water vapor transmission rate

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