Al2O3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

Zhen Zhu (Corresponding Author), Saoussen Merdes (Corresponding Author), Oili M.E. Ylivaara, Kenichiro Mizohata, Mikko J. Heikkilä, Hele Savin

Research output: Contribution to journalArticleScientificpeer-review

Abstract

In this article, a combined H2O thermal atomic layer deposition of Al2O3 with in situ N2 plasma treatment process at 90 °C for encapsulation applications is reported. The effect of process parameters on the growth behavior and properties of Al2O3 thin films, such as elemental composition, residual stress, moisture permeation barrier ability, density, and roughness, is investigated. Optimization of plasma exposure time gives films with a low impurity (≈3.8 at% for hydrogen, ≈0.17 at% for carbon, and ≈0.51 at% for nitrogen), a high mass density (≈3.1 g cm−3), and a low tensile residual stress (≈160 MPa). A water vapor transmission rate of 2.9 × 10−3 g m−2 day−1 is obtained for polyethylene naphthalate substrates coated with 4-nm-thick Al2O3 films.

Original languageEnglish
Article number1900237
JournalPhysica Status Solidi (A) Applications and Materials Science
DOIs
Publication statusAccepted/In press - 12 Sep 2019
MoE publication typeA1 Journal article-refereed

Fingerprint

Plasma Gases
Plasma deposition
Atomic layer deposition
thermal plasmas
atomic layer epitaxy
Encapsulation
residual stress
Residual stresses
Plasmas
Thin films
Steam
Polyethylene
thin films
tensile stress
Thick films
Permeation
Tensile stress
moisture
Water vapor
thick films

Keywords

  • AlO
  • atomic layer deposition
  • plasma
  • radicals
  • water vapor transmission rate

Cite this

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title = "Al2O3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications",
abstract = "In this article, a combined H2O thermal atomic layer deposition of Al2O3 with in situ N2 plasma treatment process at 90 °C for encapsulation applications is reported. The effect of process parameters on the growth behavior and properties of Al2O3 thin films, such as elemental composition, residual stress, moisture permeation barrier ability, density, and roughness, is investigated. Optimization of plasma exposure time gives films with a low impurity (≈3.8 at{\%} for hydrogen, ≈0.17 at{\%} for carbon, and ≈0.51 at{\%} for nitrogen), a high mass density (≈3.1 g cm−3), and a low tensile residual stress (≈160 MPa). A water vapor transmission rate of 2.9 × 10−3 g m−2 day−1 is obtained for polyethylene naphthalate substrates coated with 4-nm-thick Al2O3 films.",
keywords = "AlO, atomic layer deposition, plasma, radicals, water vapor transmission rate",
author = "Zhen Zhu and Saoussen Merdes and Ylivaara, {Oili M.E.} and Kenichiro Mizohata and Heikkil{\"a}, {Mikko J.} and Hele Savin",
year = "2019",
month = "9",
day = "12",
doi = "10.1002/pssa.201900237",
language = "English",
journal = "Physica Status Solidi A: Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley",

}

Al2O3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications. / Zhu, Zhen (Corresponding Author); Merdes, Saoussen (Corresponding Author); Ylivaara, Oili M.E.; Mizohata, Kenichiro; Heikkilä, Mikko J.; Savin, Hele.

In: Physica Status Solidi (A) Applications and Materials Science, 12.09.2019.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Al2O3 Thin Films Prepared by a Combined Thermal-Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

AU - Zhu, Zhen

AU - Merdes, Saoussen

AU - Ylivaara, Oili M.E.

AU - Mizohata, Kenichiro

AU - Heikkilä, Mikko J.

AU - Savin, Hele

PY - 2019/9/12

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N2 - In this article, a combined H2O thermal atomic layer deposition of Al2O3 with in situ N2 plasma treatment process at 90 °C for encapsulation applications is reported. The effect of process parameters on the growth behavior and properties of Al2O3 thin films, such as elemental composition, residual stress, moisture permeation barrier ability, density, and roughness, is investigated. Optimization of plasma exposure time gives films with a low impurity (≈3.8 at% for hydrogen, ≈0.17 at% for carbon, and ≈0.51 at% for nitrogen), a high mass density (≈3.1 g cm−3), and a low tensile residual stress (≈160 MPa). A water vapor transmission rate of 2.9 × 10−3 g m−2 day−1 is obtained for polyethylene naphthalate substrates coated with 4-nm-thick Al2O3 films.

AB - In this article, a combined H2O thermal atomic layer deposition of Al2O3 with in situ N2 plasma treatment process at 90 °C for encapsulation applications is reported. The effect of process parameters on the growth behavior and properties of Al2O3 thin films, such as elemental composition, residual stress, moisture permeation barrier ability, density, and roughness, is investigated. Optimization of plasma exposure time gives films with a low impurity (≈3.8 at% for hydrogen, ≈0.17 at% for carbon, and ≈0.51 at% for nitrogen), a high mass density (≈3.1 g cm−3), and a low tensile residual stress (≈160 MPa). A water vapor transmission rate of 2.9 × 10−3 g m−2 day−1 is obtained for polyethylene naphthalate substrates coated with 4-nm-thick Al2O3 films.

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