Aluminum nitride for thin film bulk acoustic wave resonators

Arto Nurmela; Tommi Riekkinen; Tuomas Pensala; Jyrki Molarius; Markku Ylilammi

Aluminum nitride for thin film bulk acoustic wave resonators

Arto Nurmela, Tommi Riekkinen, Tuomas Pensala, Jyrki Molarius, Markku Ylilammi

Research output: Contribution to conference › Conference article › Scientific

Abstract

We have developed a piezo electric aluminum nitride (AlN) deposition process which enables the manufacturing of bulk acoustic wave (BAW) resonators. The BAW devices may be used in numerous GHz frequency applications: Radio frequency filters in new mobile communication technologies eg.3g, umts, cdma and in present technologies like gsm, wlan and mlan, local clocks for computers and ultrawide band filters (UWB) and also for example actuators in micro-electric mechanical systems (MEMS).

Original language	English
Publication status	Published - 2007
MoE publication type	Not Eligible
Event	XLI Annual Conference of the Finnish Physical Society - Tallin, Estonia Duration: 15 Mar 2007 → 17 Mar 2007

Conference

Conference	XLI Annual Conference of the Finnish Physical Society
Country/Territory	Estonia
City	Tallin
Period	15/03/07 → 17/03/07

Keywords

aluminum nitride
bulk acoustic wave resonator

Cite this

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title = "Aluminum nitride for thin film bulk acoustic wave resonators",

abstract = "We have developed a piezo electric aluminum nitride (AlN) deposition process which enables the manufacturing of bulk acoustic wave (BAW) resonators. The BAW devices may be used in numerous GHz frequency applications: Radio frequency filters in new mobile communication technologies eg.3g, umts, cdma and in present technologies like gsm, wlan and mlan, local clocks for computers and ultrawide band filters (UWB) and also for example actuators in micro-electric mechanical systems (MEMS).",

keywords = "aluminum nitride, bulk acoustic wave resonator",

author = "Arto Nurmela and Tommi Riekkinen and Tuomas Pensala and Jyrki Molarius and Markku Ylilammi",

note = "Project code: 3266; XLI Annual Conference of the Finnish Physical Society ; Conference date: 15-03-2007 Through 17-03-2007",

year = "2007",

language = "English",

}

TY - CONF

T1 - Aluminum nitride for thin film bulk acoustic wave resonators

AU - Nurmela, Arto

AU - Riekkinen, Tommi

AU - Pensala, Tuomas

AU - Molarius, Jyrki

AU - Ylilammi, Markku

N1 - Project code: 3266

PY - 2007

Y1 - 2007

N2 - We have developed a piezo electric aluminum nitride (AlN) deposition process which enables the manufacturing of bulk acoustic wave (BAW) resonators. The BAW devices may be used in numerous GHz frequency applications: Radio frequency filters in new mobile communication technologies eg.3g, umts, cdma and in present technologies like gsm, wlan and mlan, local clocks for computers and ultrawide band filters (UWB) and also for example actuators in micro-electric mechanical systems (MEMS).

AB - We have developed a piezo electric aluminum nitride (AlN) deposition process which enables the manufacturing of bulk acoustic wave (BAW) resonators. The BAW devices may be used in numerous GHz frequency applications: Radio frequency filters in new mobile communication technologies eg.3g, umts, cdma and in present technologies like gsm, wlan and mlan, local clocks for computers and ultrawide band filters (UWB) and also for example actuators in micro-electric mechanical systems (MEMS).

KW - aluminum nitride

KW - bulk acoustic wave resonator

M3 - Conference article

T2 - XLI Annual Conference of the Finnish Physical Society

Y2 - 15 March 2007 through 17 March 2007

ER -

Aluminum nitride for thin film bulk acoustic wave resonators

Abstract

Conference

Keywords

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