Aluminum nitride for thin film bulk acoustic wave resonators

Arto Nurmela, Tommi Riekkinen, Tuomas Pensala, Jyrki Molarius, Markku Ylilammi

Research output: Contribution to conferenceConference articleScientific

Abstract

We have developed a piezo electric aluminum nitride (AlN) deposition process which enables the manufacturing of bulk acoustic wave (BAW) resonators. The BAW devices may be used in numerous GHz frequency applications: Radio frequency filters in new mobile communication technologies eg.3g, umts, cdma and in present technologies like gsm, wlan and mlan, local clocks for computers and ultrawide band filters (UWB) and also for example actuators in micro-electric mechanical systems (MEMS).
Original languageEnglish
Publication statusPublished - 2007
MoE publication typeNot Eligible
EventXLI Annual Conference of the Finnish Physical Society - Tallin, Estonia
Duration: 15 Mar 200717 Mar 2007

Conference

ConferenceXLI Annual Conference of the Finnish Physical Society
CountryEstonia
CityTallin
Period15/03/0717/03/07

Fingerprint

aluminum nitrides
bulk acoustic wave devices
resonators
filters
acoustics
thin films
clocks
radio frequencies
manufacturing
actuators
communication

Keywords

  • aluminum nitride
  • bulk acoustic wave resonator

Cite this

Nurmela, A., Riekkinen, T., Pensala, T., Molarius, J., & Ylilammi, M. (2007). Aluminum nitride for thin film bulk acoustic wave resonators. Paper presented at XLI Annual Conference of the Finnish Physical Society, Tallin, Estonia.
Nurmela, Arto ; Riekkinen, Tommi ; Pensala, Tuomas ; Molarius, Jyrki ; Ylilammi, Markku. / Aluminum nitride for thin film bulk acoustic wave resonators. Paper presented at XLI Annual Conference of the Finnish Physical Society, Tallin, Estonia.
@conference{15ab8ee90858474d9f581081b5559e30,
title = "Aluminum nitride for thin film bulk acoustic wave resonators",
abstract = "We have developed a piezo electric aluminum nitride (AlN) deposition process which enables the manufacturing of bulk acoustic wave (BAW) resonators. The BAW devices may be used in numerous GHz frequency applications: Radio frequency filters in new mobile communication technologies eg.3g, umts, cdma and in present technologies like gsm, wlan and mlan, local clocks for computers and ultrawide band filters (UWB) and also for example actuators in micro-electric mechanical systems (MEMS).",
keywords = "aluminum nitride, bulk acoustic wave resonator",
author = "Arto Nurmela and Tommi Riekkinen and Tuomas Pensala and Jyrki Molarius and Markku Ylilammi",
note = "Project code: 3266; XLI Annual Conference of the Finnish Physical Society ; Conference date: 15-03-2007 Through 17-03-2007",
year = "2007",
language = "English",

}

Nurmela, A, Riekkinen, T, Pensala, T, Molarius, J & Ylilammi, M 2007, 'Aluminum nitride for thin film bulk acoustic wave resonators', Paper presented at XLI Annual Conference of the Finnish Physical Society, Tallin, Estonia, 15/03/07 - 17/03/07.

Aluminum nitride for thin film bulk acoustic wave resonators. / Nurmela, Arto; Riekkinen, Tommi; Pensala, Tuomas; Molarius, Jyrki; Ylilammi, Markku.

2007. Paper presented at XLI Annual Conference of the Finnish Physical Society, Tallin, Estonia.

Research output: Contribution to conferenceConference articleScientific

TY - CONF

T1 - Aluminum nitride for thin film bulk acoustic wave resonators

AU - Nurmela, Arto

AU - Riekkinen, Tommi

AU - Pensala, Tuomas

AU - Molarius, Jyrki

AU - Ylilammi, Markku

N1 - Project code: 3266

PY - 2007

Y1 - 2007

N2 - We have developed a piezo electric aluminum nitride (AlN) deposition process which enables the manufacturing of bulk acoustic wave (BAW) resonators. The BAW devices may be used in numerous GHz frequency applications: Radio frequency filters in new mobile communication technologies eg.3g, umts, cdma and in present technologies like gsm, wlan and mlan, local clocks for computers and ultrawide band filters (UWB) and also for example actuators in micro-electric mechanical systems (MEMS).

AB - We have developed a piezo electric aluminum nitride (AlN) deposition process which enables the manufacturing of bulk acoustic wave (BAW) resonators. The BAW devices may be used in numerous GHz frequency applications: Radio frequency filters in new mobile communication technologies eg.3g, umts, cdma and in present technologies like gsm, wlan and mlan, local clocks for computers and ultrawide band filters (UWB) and also for example actuators in micro-electric mechanical systems (MEMS).

KW - aluminum nitride

KW - bulk acoustic wave resonator

M3 - Conference article

ER -

Nurmela A, Riekkinen T, Pensala T, Molarius J, Ylilammi M. Aluminum nitride for thin film bulk acoustic wave resonators. 2007. Paper presented at XLI Annual Conference of the Finnish Physical Society, Tallin, Estonia.