Abstract
We have developed a piezo electric aluminum nitride (AlN)
deposition process which enables the manufacturing of
bulk acoustic wave (BAW) resonators. The BAW devices may
be used in numerous GHz frequency applications: Radio
frequency filters in new mobile communication
technologies eg.3g, umts, cdma and in present
technologies like gsm, wlan and mlan, local clocks for
computers and ultrawide band filters (UWB) and also for
example actuators in micro-electric mechanical systems
(MEMS).
| Original language | English |
|---|---|
| Publication status | Published - 2007 |
| MoE publication type | Not Eligible |
| Event | XLI Annual Conference of the Finnish Physical Society - Tallin, Estonia Duration: 15 Mar 2007 → 17 Mar 2007 |
Conference
| Conference | XLI Annual Conference of the Finnish Physical Society |
|---|---|
| Country | Estonia |
| City | Tallin |
| Period | 15/03/07 → 17/03/07 |
Keywords
- aluminum nitride
- bulk acoustic wave resonator
Fingerprint Dive into the research topics of 'Aluminum nitride for thin film bulk acoustic wave resonators'. Together they form a unique fingerprint.
Cite this
Nurmela, A., Riekkinen, T., Pensala, T., Molarius, J., & Ylilammi, M. (2007). Aluminum nitride for thin film bulk acoustic wave resonators. Paper presented at XLI Annual Conference of the Finnish Physical Society, Tallin, Estonia.