We have developed a piezo electric aluminum nitride (AlN) deposition process which enables the manufacturing of bulk acoustic wave (BAW) resonators. The BAW devices may be used in numerous GHz frequency applications: Radio frequency filters in new mobile communication technologies eg.3g, umts, cdma and in present technologies like gsm, wlan and mlan, local clocks for computers and ultrawide band filters (UWB) and also for example actuators in micro-electric mechanical systems (MEMS).
|Publication status||Published - 2007|
|MoE publication type||Not Eligible|
|Event||XLI Annual Conference of the Finnish Physical Society - Tallin, Estonia|
Duration: 15 Mar 2007 → 17 Mar 2007
|Conference||XLI Annual Conference of the Finnish Physical Society|
|Period||15/03/07 → 17/03/07|
- aluminum nitride
- bulk acoustic wave resonator
Nurmela, A., Riekkinen, T., Pensala, T., Molarius, J., & Ylilammi, M. (2007). Aluminum nitride for thin film bulk acoustic wave resonators. Paper presented at XLI Annual Conference of the Finnish Physical Society, Tallin, Estonia.