Aluminum nitride for thin film bulk acoustic wave resonators

Arto Nurmela, Tommi Riekkinen, Tuomas Pensala, Jyrki Molarius, Markku Ylilammi

    Research output: Contribution to conferenceConference articleScientific

    Abstract

    We have developed a piezo electric aluminum nitride (AlN) deposition process which enables the manufacturing of bulk acoustic wave (BAW) resonators. The BAW devices may be used in numerous GHz frequency applications: Radio frequency filters in new mobile communication technologies eg.3g, umts, cdma and in present technologies like gsm, wlan and mlan, local clocks for computers and ultrawide band filters (UWB) and also for example actuators in micro-electric mechanical systems (MEMS).
    Original languageEnglish
    Publication statusPublished - 2007
    MoE publication typeNot Eligible
    EventXLI Annual Conference of the Finnish Physical Society - Tallin, Estonia
    Duration: 15 Mar 200717 Mar 2007

    Conference

    ConferenceXLI Annual Conference of the Finnish Physical Society
    CountryEstonia
    CityTallin
    Period15/03/0717/03/07

    Keywords

    • aluminum nitride
    • bulk acoustic wave resonator

    Fingerprint Dive into the research topics of 'Aluminum nitride for thin film bulk acoustic wave resonators'. Together they form a unique fingerprint.

  • Cite this

    Nurmela, A., Riekkinen, T., Pensala, T., Molarius, J., & Ylilammi, M. (2007). Aluminum nitride for thin film bulk acoustic wave resonators. Paper presented at XLI Annual Conference of the Finnish Physical Society, Tallin, Estonia.