Amorphous layer formation at the TaC/Cu interface in the Si/TaC/Cu metallization system

Tomi Laurila, Zeng Kejun, Jorma K. Kivilahti, Jyrki Molarius, Ilkka Suni

Research output: Contribution to journalArticleScientificpeer-review

25 Citations (Scopus)

Abstract

An amorphous Ta(O,C)x layer was found to form at the TaC/Cu interface in the Si/TaC/Cu metallization system. The formation of the layer was induced by oxygen trapped in the as-deposited films, since on the basis of thermodynamic evaluation of the ternary Ta-C-O system, the dissociation of the TaC layer and the formation of the Ta2O5 and graphite can be expected to occur during subsequent annealings in this case. However, as observed experimentally, the formation of the amorphous Ta(O,C)x preceded the formation of the stable tantalum oxide.
Original languageEnglish
Pages (from-to)938-940
JournalApplied Physics Letters
Volume80
Issue number6
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Fingerprint

tantalum oxides
graphite
dissociation
thermodynamics
annealing
evaluation
oxygen

Keywords

  • tantalum
  • tantalum carbide
  • tantalum pentoxide
  • metallization
  • silicon
  • elemental semiconductors
  • tantalum compounds
  • copper
  • semiconductor-metal boundaries
  • metallisation
  • amorphous state
  • annealing
  • rutherford backscattering
  • x-ray diffraction
  • transmission electron microscopy

Cite this

Laurila, Tomi ; Kejun, Zeng ; Kivilahti, Jorma K. ; Molarius, Jyrki ; Suni, Ilkka. / Amorphous layer formation at the TaC/Cu interface in the Si/TaC/Cu metallization system. In: Applied Physics Letters. 2002 ; Vol. 80, No. 6. pp. 938-940.
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title = "Amorphous layer formation at the TaC/Cu interface in the Si/TaC/Cu metallization system",
abstract = "An amorphous Ta(O,C)x layer was found to form at the TaC/Cu interface in the Si/TaC/Cu metallization system. The formation of the layer was induced by oxygen trapped in the as-deposited films, since on the basis of thermodynamic evaluation of the ternary Ta-C-O system, the dissociation of the TaC layer and the formation of the Ta2O5 and graphite can be expected to occur during subsequent annealings in this case. However, as observed experimentally, the formation of the amorphous Ta(O,C)x preceded the formation of the stable tantalum oxide.",
keywords = "tantalum, tantalum carbide, tantalum pentoxide, metallization, silicon, elemental semiconductors, tantalum compounds, copper, semiconductor-metal boundaries, metallisation, amorphous state, annealing, rutherford backscattering, x-ray diffraction, transmission electron microscopy",
author = "Tomi Laurila and Zeng Kejun and Kivilahti, {Jorma K.} and Jyrki Molarius and Ilkka Suni",
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year = "2002",
doi = "10.1063/1.1447601",
language = "English",
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Laurila, T, Kejun, Z, Kivilahti, JK, Molarius, J & Suni, I 2002, 'Amorphous layer formation at the TaC/Cu interface in the Si/TaC/Cu metallization system', Applied Physics Letters, vol. 80, no. 6, pp. 938-940. https://doi.org/10.1063/1.1447601

Amorphous layer formation at the TaC/Cu interface in the Si/TaC/Cu metallization system. / Laurila, Tomi; Kejun, Zeng; Kivilahti, Jorma K.; Molarius, Jyrki; Suni, Ilkka.

In: Applied Physics Letters, Vol. 80, No. 6, 2002, p. 938-940.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Amorphous layer formation at the TaC/Cu interface in the Si/TaC/Cu metallization system

AU - Laurila, Tomi

AU - Kejun, Zeng

AU - Kivilahti, Jorma K.

AU - Molarius, Jyrki

AU - Suni, Ilkka

N1 - Project code: Z1SU00150

PY - 2002

Y1 - 2002

N2 - An amorphous Ta(O,C)x layer was found to form at the TaC/Cu interface in the Si/TaC/Cu metallization system. The formation of the layer was induced by oxygen trapped in the as-deposited films, since on the basis of thermodynamic evaluation of the ternary Ta-C-O system, the dissociation of the TaC layer and the formation of the Ta2O5 and graphite can be expected to occur during subsequent annealings in this case. However, as observed experimentally, the formation of the amorphous Ta(O,C)x preceded the formation of the stable tantalum oxide.

AB - An amorphous Ta(O,C)x layer was found to form at the TaC/Cu interface in the Si/TaC/Cu metallization system. The formation of the layer was induced by oxygen trapped in the as-deposited films, since on the basis of thermodynamic evaluation of the ternary Ta-C-O system, the dissociation of the TaC layer and the formation of the Ta2O5 and graphite can be expected to occur during subsequent annealings in this case. However, as observed experimentally, the formation of the amorphous Ta(O,C)x preceded the formation of the stable tantalum oxide.

KW - tantalum

KW - tantalum carbide

KW - tantalum pentoxide

KW - metallization

KW - silicon

KW - elemental semiconductors

KW - tantalum compounds

KW - copper

KW - semiconductor-metal boundaries

KW - metallisation

KW - amorphous state

KW - annealing

KW - rutherford backscattering

KW - x-ray diffraction

KW - transmission electron microscopy

U2 - 10.1063/1.1447601

DO - 10.1063/1.1447601

M3 - Article

VL - 80

SP - 938

EP - 940

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

ER -