Abstract
An amorphous Ta(O,C)x layer was found to form at the
TaC/Cu interface in the Si/TaC/Cu metallization system.
The formation of the layer was induced by oxygen trapped
in the as-deposited films, since on the basis of
thermodynamic evaluation of the ternary Ta-C-O system,
the dissociation of the TaC layer and the formation of
the Ta2O5 and graphite can be expected to occur during
subsequent annealings in this case. However, as observed
experimentally, the formation of the amorphous Ta(O,C)x
preceded the formation of the stable tantalum oxide.
| Original language | English |
|---|---|
| Pages (from-to) | 938-940 |
| Journal | Applied Physics Letters |
| Volume | 80 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2002 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- tantalum
- tantalum carbide
- tantalum pentoxide
- metallization
- silicon
- elemental semiconductors
- tantalum compounds
- copper
- semiconductor-metal boundaries
- metallisation
- amorphous state
- annealing
- rutherford backscattering
- x-ray diffraction
- transmission electron microscopy