Amorphous layer formation at the TaC/Cu interface in the Si/TaC/Cu metallization system

Tomi Laurila, Zeng Kejun, Jorma K. Kivilahti, Jyrki Molarius, Ilkka Suni

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An amorphous Ta(O,C)x layer was found to form at the TaC/Cu interface in the Si/TaC/Cu metallization system. The formation of the layer was induced by oxygen trapped in the as-deposited films, since on the basis of thermodynamic evaluation of the ternary Ta-C-O system, the dissociation of the TaC layer and the formation of the Ta2O5 and graphite can be expected to occur during subsequent annealings in this case. However, as observed experimentally, the formation of the amorphous Ta(O,C)x preceded the formation of the stable tantalum oxide.
Original languageEnglish
Pages (from-to)938-940
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed



  • tantalum
  • tantalum carbide
  • tantalum pentoxide
  • metallization
  • silicon
  • elemental semiconductors
  • tantalum compounds
  • copper
  • semiconductor-metal boundaries
  • metallisation
  • amorphous state
  • annealing
  • rutherford backscattering
  • x-ray diffraction
  • transmission electron microscopy

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