Amorphous metals for RF-MEMS

Hannu Kattelus, Mari Ylönen, Tauno Vähä-Heikkilä

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

Several RF-MEMS devices can benefit from metallic micromachining processes in comparison to the conventional silicon-based MEMS technologies for various reasons. A variety of metallic materials and their fabrication techniques have indeed been tested in the laboratory but commercial volume manufacturing processes for RF-MEMS devices are almost non-existent. Good conductors such as copper and gold do not perform optimally as structural materials during extended cycling. This report describes a new group of materials for RF-MEMS: amorphous metals. In terms of electrical conductivity amorphous metals are intermediate between elemental metals and semiconductors but they can fulfil the mechanical function of the devices despite of their conductivity limitation.
Original languageEnglish
Title of host publicationURSI/IEEE XXIX Convention on Radio Science
Place of PublicationEspoo
PublisherVTT Technical Research Centre of Finland
Pages13-13
ISBN (Electronic)951-38-6296-8
ISBN (Print)951-38-6295-X
Publication statusPublished - 2004
MoE publication typeA4 Article in a conference publication
EventURSI/IEEE XXIX Convention on Radio Science - Espoo, Finland
Duration: 1 Nov 20042 Nov 2004

Publication series

SeriesVTT Symposium
Number235
ISSN0357-9387

Conference

ConferenceURSI/IEEE XXIX Convention on Radio Science
CountryFinland
CityEspoo
Period1/11/042/11/04

Fingerprint

MEMS
Metals
Metalloids
Micromachining
Silicon
Gold
Copper
Semiconductor materials
Fabrication

Cite this

Kattelus, H., Ylönen, M., & Vähä-Heikkilä, T. (2004). Amorphous metals for RF-MEMS. In URSI/IEEE XXIX Convention on Radio Science (pp. 13-13). Espoo: VTT Technical Research Centre of Finland. VTT Symposium, No. 235
Kattelus, Hannu ; Ylönen, Mari ; Vähä-Heikkilä, Tauno. / Amorphous metals for RF-MEMS. URSI/IEEE XXIX Convention on Radio Science. Espoo : VTT Technical Research Centre of Finland, 2004. pp. 13-13 (VTT Symposium; No. 235).
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abstract = "Several RF-MEMS devices can benefit from metallic micromachining processes in comparison to the conventional silicon-based MEMS technologies for various reasons. A variety of metallic materials and their fabrication techniques have indeed been tested in the laboratory but commercial volume manufacturing processes for RF-MEMS devices are almost non-existent. Good conductors such as copper and gold do not perform optimally as structural materials during extended cycling. This report describes a new group of materials for RF-MEMS: amorphous metals. In terms of electrical conductivity amorphous metals are intermediate between elemental metals and semiconductors but they can fulfil the mechanical function of the devices despite of their conductivity limitation.",
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Kattelus, H, Ylönen, M & Vähä-Heikkilä, T 2004, Amorphous metals for RF-MEMS. in URSI/IEEE XXIX Convention on Radio Science. VTT Technical Research Centre of Finland, Espoo, VTT Symposium, no. 235, pp. 13-13, URSI/IEEE XXIX Convention on Radio Science , Espoo, Finland, 1/11/04.

Amorphous metals for RF-MEMS. / Kattelus, Hannu; Ylönen, Mari; Vähä-Heikkilä, Tauno.

URSI/IEEE XXIX Convention on Radio Science. Espoo : VTT Technical Research Centre of Finland, 2004. p. 13-13 (VTT Symposium; No. 235).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AB - Several RF-MEMS devices can benefit from metallic micromachining processes in comparison to the conventional silicon-based MEMS technologies for various reasons. A variety of metallic materials and their fabrication techniques have indeed been tested in the laboratory but commercial volume manufacturing processes for RF-MEMS devices are almost non-existent. Good conductors such as copper and gold do not perform optimally as structural materials during extended cycling. This report describes a new group of materials for RF-MEMS: amorphous metals. In terms of electrical conductivity amorphous metals are intermediate between elemental metals and semiconductors but they can fulfil the mechanical function of the devices despite of their conductivity limitation.

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Kattelus H, Ylönen M, Vähä-Heikkilä T. Amorphous metals for RF-MEMS. In URSI/IEEE XXIX Convention on Radio Science. Espoo: VTT Technical Research Centre of Finland. 2004. p. 13-13. (VTT Symposium; No. 235).