Amorphous metals for RF-MEMS

Hannu Kattelus; Mari Ylönen; Tauno Vähä-Heikkilä

Amorphous metals for RF-MEMS

Hannu Kattelus
, Mari Ylönen
, Tauno Vähä-Heikkilä

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Several RF-MEMS devices can benefit from metallic micromachining processes in comparison to the conventional silicon-based MEMS technologies for various reasons. A variety of metallic materials and their fabrication techniques have indeed been tested in the laboratory but commercial volume manufacturing processes for RF-MEMS devices are almost non-existent. Good conductors such as copper and gold do not perform optimally as structural materials during extended cycling. This report describes a new group of materials for RF-MEMS: amorphous metals. In terms of electrical conductivity amorphous metals are intermediate between elemental metals and semiconductors but they can fulfil the mechanical function of the devices despite of their conductivity limitation.

Original language	English
Title of host publication	URSI/IEEE XXIX Convention on Radio Science
Place of Publication	Espoo
Publisher	VTT Technical Research Centre of Finland
Pages	13-13
ISBN (Electronic)	951-38-6296-8
ISBN (Print)	951-38-6295-X
Publication status	Published - 2004
MoE publication type	A4 Article in a conference publication
Event	URSI/IEEE XXIX Convention on Radio Science - Espoo, Finland Duration: 1 Nov 2004 → 2 Nov 2004

Publication series

Series	VTT Symposium
Number	235
ISSN	0357-9387

Conference

Conference	URSI/IEEE XXIX Convention on Radio Science
Country/Territory	Finland
City	Espoo
Period	1/11/04 → 2/11/04

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Access to Document

https://publications.vtt.fi/pdf/symposiums/2004/S235.pdf

Cite this

@inproceedings{13d5d574c1944a8e99e88c19f7fe8e8d,

title = "Amorphous metals for RF-MEMS",

abstract = "Several RF-MEMS devices can benefit from metallic micromachining processes in comparison to the conventional silicon-based MEMS technologies for various reasons. A variety of metallic materials and their fabrication techniques have indeed been tested in the laboratory but commercial volume manufacturing processes for RF-MEMS devices are almost non-existent. Good conductors such as copper and gold do not perform optimally as structural materials during extended cycling. This report describes a new group of materials for RF-MEMS: amorphous metals. In terms of electrical conductivity amorphous metals are intermediate between elemental metals and semiconductors but they can fulfil the mechanical function of the devices despite of their conductivity limitation.",

author = "Hannu Kattelus and Mari Yl{\"o}nen and Tauno V{\"a}h{\"a}-Heikkil{\"a}",

year = "2004",

language = "English",

isbn = "951-38-6295-X",

series = "VTT Symposium",

publisher = "VTT Technical Research Centre of Finland",

number = "235",

pages = "13--13",

booktitle = "URSI/IEEE XXIX Convention on Radio Science",

address = "Finland",

note = "URSI/IEEE XXIX Convention on Radio Science ; Conference date: 01-11-2004 Through 02-11-2004",

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TY - GEN

T1 - Amorphous metals for RF-MEMS

AU - Kattelus, Hannu

AU - Ylönen, Mari

AU - Vähä-Heikkilä, Tauno

PY - 2004

Y1 - 2004

N2 - Several RF-MEMS devices can benefit from metallic micromachining processes in comparison to the conventional silicon-based MEMS technologies for various reasons. A variety of metallic materials and their fabrication techniques have indeed been tested in the laboratory but commercial volume manufacturing processes for RF-MEMS devices are almost non-existent. Good conductors such as copper and gold do not perform optimally as structural materials during extended cycling. This report describes a new group of materials for RF-MEMS: amorphous metals. In terms of electrical conductivity amorphous metals are intermediate between elemental metals and semiconductors but they can fulfil the mechanical function of the devices despite of their conductivity limitation.

AB - Several RF-MEMS devices can benefit from metallic micromachining processes in comparison to the conventional silicon-based MEMS technologies for various reasons. A variety of metallic materials and their fabrication techniques have indeed been tested in the laboratory but commercial volume manufacturing processes for RF-MEMS devices are almost non-existent. Good conductors such as copper and gold do not perform optimally as structural materials during extended cycling. This report describes a new group of materials for RF-MEMS: amorphous metals. In terms of electrical conductivity amorphous metals are intermediate between elemental metals and semiconductors but they can fulfil the mechanical function of the devices despite of their conductivity limitation.

M3 - Conference article in proceedings

SN - 951-38-6295-X

T3 - VTT Symposium

SP - 13

EP - 13

BT - URSI/IEEE XXIX Convention on Radio Science

PB - VTT Technical Research Centre of Finland

CY - Espoo

T2 - URSI/IEEE XXIX Convention on Radio Science

Y2 - 1 November 2004 through 2 November 2004

ER -

Amorphous metals for RF-MEMS

Abstract

Publication series

Conference

UN SDGs

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Cite this