Amorphous phase formation and recrystallization in ion-implanted silicides

Charles Hewett; Ilkka Suni; Liang-Sun Hung; Silvanus Lau

Amorphous phase formation and recrystallization in ion-implanted silicides

Charles Hewett
, Ilkka Suni
, Liang-Sun Hung
, Silvanus Lau

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Chapter or book article › Professional

Abstract

Ion implantation induced phase transformations and recrystallization during post-annealing in CoSi₂, CrSi₂, and Pd₂Si are studied. All three silicides are found to reorder at about 1/3 the melting point of the silicide. We speculate that ion-implanted silicides recrystallize by the same mechanism and that amorphous phases produced by implantation are unstable rather than metastable.

Original language	English
Title of host publication	Layered Structures and Interface Kinetics
Subtitle of host publication	Their Technology and Application
Editors	S. Furukawa
Place of Publication	Tokyo
Publisher	Kluwer Academic Publishers
Number of pages	13
ISBN (Print)	978-90-277-1939-3
Publication status	Published - 1985
MoE publication type	D2 Article in professional manuals or guides or professional information systems or text book material

Publication series

Series	Advances in Solid State Technology
Volume	2

Cite this

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title = "Amorphous phase formation and recrystallization in ion-implanted silicides",

abstract = "Ion implantation induced phase transformations and recrystallization during post-annealing in CoSi2, CrSi2, and Pd2Si are studied. All three silicides are found to reorder at about 1/3 the melting point of the silicide. We speculate that ion-implanted silicides recrystallize by the same mechanism and that amorphous phases produced by implantation are unstable rather than metastable.",

author = "Charles Hewett and Ilkka Suni and Liang-Sun Hung and Silvanus Lau",

year = "1985",

language = "English",

isbn = "978-90-277-1939-3",

series = "Advances in Solid State Technology",

editor = "S. Furukawa",

booktitle = "Layered Structures and Interface Kinetics",

publisher = "Kluwer Academic Publishers",

address = "Netherlands",

}

Amorphous phase formation and recrystallization in ion-implanted silicides. / Hewett, Charles; Suni, Ilkka; Hung, Liang-Sun et al.
Layered Structures and Interface Kinetics: Their Technology and Application. ed. / S. Furukawa. Tokyo: Kluwer Academic Publishers, 1985. (Advances in Solid State Technology, Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Chapter or book article › Professional

TY - CHAP

T1 - Amorphous phase formation and recrystallization in ion-implanted silicides

AU - Hewett, Charles

AU - Suni, Ilkka

AU - Hung, Liang-Sun

AU - Lau, Silvanus

PY - 1985

Y1 - 1985

N2 - Ion implantation induced phase transformations and recrystallization during post-annealing in CoSi2, CrSi2, and Pd2Si are studied. All three silicides are found to reorder at about 1/3 the melting point of the silicide. We speculate that ion-implanted silicides recrystallize by the same mechanism and that amorphous phases produced by implantation are unstable rather than metastable.

AB - Ion implantation induced phase transformations and recrystallization during post-annealing in CoSi2, CrSi2, and Pd2Si are studied. All three silicides are found to reorder at about 1/3 the melting point of the silicide. We speculate that ion-implanted silicides recrystallize by the same mechanism and that amorphous phases produced by implantation are unstable rather than metastable.

UR - https://link.springer.com/book/9789027719393

M3 - Chapter or book article

SN - 978-90-277-1939-3

T3 - Advances in Solid State Technology

BT - Layered Structures and Interface Kinetics

A2 - Furukawa, S.

PB - Kluwer Academic Publishers

CY - Tokyo

ER -

Amorphous phase formation and recrystallization in ion-implanted silicides

Abstract

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