Amorphous silicon optical waveguides and Bragg mirrors

A. Khanna, M. Mulot, Sanna Arpiainen, A. Säynätjoki, Jouni Ahopelto, S. Honkanen, H. Lipsanen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

8 Citations (Scopus)

Abstract

We study 200 nm thick hydrogenated amorphous silicon (a-Si:H) optical strip waveguides fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique over PECVD silicon oxide on top of standard silicon wafer. The layer of a-Si:H is etched by Reactive Ion Etching (RIE). The ability to deposit a-Si:H at low temperatures (~250°C) by PECVD renders it a promising material for integration of optical waveguides with microelectronics. Waveguides with width varying from 2 μm to 10 μm exhibit low loss. Material refractive index data of a-Si:H is measured by reflectometry and is used in simulations. A high refractive index contrast between a-Si:H and air allows tight optical confinement of modes. We demonstrate Bragg gratings fabricated by e-beam writing technology on top of the waveguides. The period of the grating is approximately 300 nm and the depth of the grooves is about 30 nm. The grating on top of the waveguide act as mirror.
Original languageEnglish
Title of host publicationSilicon Photonics and Photonic Integrated Circuits
PublisherInternational Society for Optics and Photonics SPIE
DOIs
Publication statusPublished - 2008
MoE publication typeA4 Article in a conference publication
EventSilicon Photonics and Photonic Integrated Circuits, Monday 7 April 2008, Strasbourg, France -
Duration: 1 Jan 2008 → …

Publication series

SeriesProceedings of SPIE
Volume6996
ISSN0277-786X

Conference

ConferenceSilicon Photonics and Photonic Integrated Circuits, Monday 7 April 2008, Strasbourg, France
Period1/01/08 → …

Fingerprint

Bragg reflectors
optical waveguides
amorphous silicon
mirrors
waveguides
vapor deposition
gratings
refractivity
silicon oxides
microelectronics
grooves
Bragg gratings
strip
deposits
etching
wafers
air
silicon
ions
simulation

Keywords

  • amorphous silicon
  • Bragg mirror
  • propagation loss
  • strip waveguide
  • optical waveguides
  • PECVD

Cite this

Khanna, A., Mulot, M., Arpiainen, S., Säynätjoki, A., Ahopelto, J., Honkanen, S., & Lipsanen, H. (2008). Amorphous silicon optical waveguides and Bragg mirrors. In Silicon Photonics and Photonic Integrated Circuits [699605] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 6996 https://doi.org/10.1117/12.781237
Khanna, A. ; Mulot, M. ; Arpiainen, Sanna ; Säynätjoki, A. ; Ahopelto, Jouni ; Honkanen, S. ; Lipsanen, H. / Amorphous silicon optical waveguides and Bragg mirrors. Silicon Photonics and Photonic Integrated Circuits. International Society for Optics and Photonics SPIE, 2008. (Proceedings of SPIE, Vol. 6996).
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abstract = "We study 200 nm thick hydrogenated amorphous silicon (a-Si:H) optical strip waveguides fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique over PECVD silicon oxide on top of standard silicon wafer. The layer of a-Si:H is etched by Reactive Ion Etching (RIE). The ability to deposit a-Si:H at low temperatures (~250°C) by PECVD renders it a promising material for integration of optical waveguides with microelectronics. Waveguides with width varying from 2 μm to 10 μm exhibit low loss. Material refractive index data of a-Si:H is measured by reflectometry and is used in simulations. A high refractive index contrast between a-Si:H and air allows tight optical confinement of modes. We demonstrate Bragg gratings fabricated by e-beam writing technology on top of the waveguides. The period of the grating is approximately 300 nm and the depth of the grooves is about 30 nm. The grating on top of the waveguide act as mirror.",
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Khanna, A, Mulot, M, Arpiainen, S, Säynätjoki, A, Ahopelto, J, Honkanen, S & Lipsanen, H 2008, Amorphous silicon optical waveguides and Bragg mirrors. in Silicon Photonics and Photonic Integrated Circuits., 699605, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 6996, Silicon Photonics and Photonic Integrated Circuits, Monday 7 April 2008, Strasbourg, France, 1/01/08. https://doi.org/10.1117/12.781237

Amorphous silicon optical waveguides and Bragg mirrors. / Khanna, A.; Mulot, M.; Arpiainen, Sanna; Säynätjoki, A.; Ahopelto, Jouni; Honkanen, S.; Lipsanen, H.

Silicon Photonics and Photonic Integrated Circuits. International Society for Optics and Photonics SPIE, 2008. 699605 (Proceedings of SPIE, Vol. 6996).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AU - Khanna, A.

AU - Mulot, M.

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AU - Säynätjoki, A.

AU - Ahopelto, Jouni

AU - Honkanen, S.

AU - Lipsanen, H.

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N2 - We study 200 nm thick hydrogenated amorphous silicon (a-Si:H) optical strip waveguides fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique over PECVD silicon oxide on top of standard silicon wafer. The layer of a-Si:H is etched by Reactive Ion Etching (RIE). The ability to deposit a-Si:H at low temperatures (~250°C) by PECVD renders it a promising material for integration of optical waveguides with microelectronics. Waveguides with width varying from 2 μm to 10 μm exhibit low loss. Material refractive index data of a-Si:H is measured by reflectometry and is used in simulations. A high refractive index contrast between a-Si:H and air allows tight optical confinement of modes. We demonstrate Bragg gratings fabricated by e-beam writing technology on top of the waveguides. The period of the grating is approximately 300 nm and the depth of the grooves is about 30 nm. The grating on top of the waveguide act as mirror.

AB - We study 200 nm thick hydrogenated amorphous silicon (a-Si:H) optical strip waveguides fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique over PECVD silicon oxide on top of standard silicon wafer. The layer of a-Si:H is etched by Reactive Ion Etching (RIE). The ability to deposit a-Si:H at low temperatures (~250°C) by PECVD renders it a promising material for integration of optical waveguides with microelectronics. Waveguides with width varying from 2 μm to 10 μm exhibit low loss. Material refractive index data of a-Si:H is measured by reflectometry and is used in simulations. A high refractive index contrast between a-Si:H and air allows tight optical confinement of modes. We demonstrate Bragg gratings fabricated by e-beam writing technology on top of the waveguides. The period of the grating is approximately 300 nm and the depth of the grooves is about 30 nm. The grating on top of the waveguide act as mirror.

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Khanna A, Mulot M, Arpiainen S, Säynätjoki A, Ahopelto J, Honkanen S et al. Amorphous silicon optical waveguides and Bragg mirrors. In Silicon Photonics and Photonic Integrated Circuits. International Society for Optics and Photonics SPIE. 2008. 699605. (Proceedings of SPIE, Vol. 6996). https://doi.org/10.1117/12.781237