Abstract
VTT's 3 µm SOI platform with record low propagation loss (0.1 dB/cm for fundamental mode), as well as polarization insensitivity, offers a rich portfolio of efficient passive and active components. With a view to extend the component toolbox by monolithically integrating high-speed plasmonic modulators, we have developed an a-Si:H based waveguide escalator to take out light from highly confined thick-SOI passives to the top layer where active materials are monolithically integrated. Using the compact escalator, monolithic integration of various high-speed active components on the 3 µm SOI platform are proposed.
Original language | English |
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Title of host publication | Silicon Photonics XV |
Editors | Graham T. Reed, Andrew P. Knights |
Publisher | International Society for Optics and Photonics SPIE |
ISBN (Print) | 978-1-5106-3333-9 |
DOIs | |
Publication status | Published - 2020 |
MoE publication type | A4 Article in a conference publication |
Event | Silicon Photonics XV 2020 - San Francisco, United States Duration: 3 Feb 2020 → 6 Feb 2020 |
Publication series
Series | Proceedings of SPIE |
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Volume | 11285 |
ISSN | 0277-786X |
Conference
Conference | Silicon Photonics XV 2020 |
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Country/Territory | United States |
City | San Francisco |
Period | 3/02/20 → 6/02/20 |
Funding
The works presented here belong to the RAPSI project, funded by Business Finland with the agreement number 992/31/2018. The work is also a part of the Academy of Finland Flagship Program - Photonics Research and Innovation (PREIN), decision number 320168.
Keywords
- Active devices
- Amorphous silicon
- Monolithic integration
- MPW run
- Silicon photonics
- SOI
- Thick-SOI waveguides
- Waveguide escalator