Amorphous silicon waveguide escalator: Monolithic integration of active components on 3 μm SOI platform

Arijit Bera (Corresponding author), Matteo Cherchi, Kirsi Tappura, Päivi Heimala, Timo Aalto

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)


VTT's 3 μm SOI platform with record low propagation loss (0.1 dB/cm for fundamental mode), as well as polarization insensitivity, offers a rich portfolio of efficient passive and active components. With a view to extend the component toolbox by monolithically integrating high-speed plasmonic modulators, we have developed an a-Si:H based waveguide escalator to take out light from highly confined thick-SOI passives to the top layer where active materials are monolithically integrated. Using the compact escalator, monolithic integration of various high-speed active components on the 3 μm SOI platform are proposed.

Original languageEnglish
Title of host publicationSilicon Photonics XV
EditorsGraham T. Reed, Andrew P. Knights
PublisherInternational Society for Optics and Photonics SPIE
ISBN (Print)978-1-5106-3333-9
Publication statusPublished - 2020
MoE publication typeA4 Article in a conference publication
EventSilicon Photonics XV 2020 - San Francisco, United States
Duration: 3 Feb 20206 Feb 2020

Publication series

SeriesProceedings of SPIE


ConferenceSilicon Photonics XV 2020
Country/TerritoryUnited States
CitySan Francisco


The works presented here belong to the RAPSI project, funded by Business Finland with the agreement number 992/31/2018. The work is also a part of the Academy of Finland Flagship Program - Photonics Research and Innovation (PREIN), decision number 320168.


  • Active devices
  • Amorphous silicon
  • Monolithic integration
  • MPW run
  • Silicon photonics
  • SOI
  • Thick-SOI waveguides
  • Waveguide escalator


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