Amorphous Ta-Si-N thin-film alloys as diffusion barriers in AI/Si metallizations

Elzbieta Kolawa, Jyrki Molarius, C. Nieh, Marc Nicolet

Research output: Contribution to journalArticleScientificpeer-review

73 Citations (Scopus)

Abstract

Amorphous Ta–Si–N thin films of a wide range of compositions were prepared by rf reactive sputtering of a Ta5Si3 target in a N2/Ar plasma. The relationship between films’ composition and resistivity is reported.
All obtained films were tested as diffusion barriers between Al and Si.
Backscattering spectrometry combined with cross‐sectional transmission electron microscopy were used to determine the barrier effectiveness. It was found that aluminum can be melted on top of the Si/Ta–Si–N structure (675 °C for 30 min) without any evidence of metallurgical interactions between the layers.
Original languageEnglish
Pages (from-to)3006-3010
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume8
Issue number3
DOIs
Publication statusPublished - 1990
MoE publication typeA1 Journal article-refereed

Fingerprint Dive into the research topics of 'Amorphous Ta-Si-N thin-film alloys as diffusion barriers in AI/Si metallizations'. Together they form a unique fingerprint.

  • Cite this