Amorphous Ta-Si-N thin-film alloys as diffusion barriers in AI/Si metallizations

Elzbieta Kolawa, Jyrki Molarius, C. Nieh, Marc Nicolet

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Amorphous Ta–Si–N thin films of a wide range of compositions were prepared by rf reactive sputtering of a Ta5Si3 target in a N2/Ar plasma. The relationship between films’ composition and resistivity is reported.
All obtained films were tested as diffusion barriers between Al and Si.
Backscattering spectrometry combined with cross‐sectional transmission electron microscopy were used to determine the barrier effectiveness. It was found that aluminum can be melted on top of the Si/Ta–Si–N structure (675 °C for 30 min) without any evidence of metallurgical interactions between the layers.
Original languageEnglish
Pages (from-to)3006-3010
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume8
Issue number3
DOIs
Publication statusPublished - 1990
MoE publication typeA1 Journal article-refereed

Fingerprint

Diffusion barriers
Metallizing
Thin films
Reactive sputtering
Amorphous films
Backscattering
thin films
Aluminum
Chemical analysis
Spectrometry
backscattering
sputtering
Transmission electron microscopy
aluminum
Plasmas
transmission electron microscopy
electrical resistivity
spectroscopy
interactions

Cite this

Kolawa, Elzbieta ; Molarius, Jyrki ; Nieh, C. ; Nicolet, Marc. / Amorphous Ta-Si-N thin-film alloys as diffusion barriers in AI/Si metallizations. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1990 ; Vol. 8, No. 3. pp. 3006-3010.
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abstract = "Amorphous Ta–Si–N thin films of a wide range of compositions were prepared by rf reactive sputtering of a Ta5Si3 target in a N2/Ar plasma. The relationship between films’ composition and resistivity is reported. All obtained films were tested as diffusion barriers between Al and Si. Backscattering spectrometry combined with cross‐sectional transmission electron microscopy were used to determine the barrier effectiveness. It was found that aluminum can be melted on top of the Si/Ta–Si–N structure (675 °C for 30 min) without any evidence of metallurgical interactions between the layers.",
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Amorphous Ta-Si-N thin-film alloys as diffusion barriers in AI/Si metallizations. / Kolawa, Elzbieta; Molarius, Jyrki; Nieh, C.; Nicolet, Marc.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 8, No. 3, 1990, p. 3006-3010.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Amorphous Ta-Si-N thin-film alloys as diffusion barriers in AI/Si metallizations

AU - Kolawa, Elzbieta

AU - Molarius, Jyrki

AU - Nieh, C.

AU - Nicolet, Marc

PY - 1990

Y1 - 1990

N2 - Amorphous Ta–Si–N thin films of a wide range of compositions were prepared by rf reactive sputtering of a Ta5Si3 target in a N2/Ar plasma. The relationship between films’ composition and resistivity is reported. All obtained films were tested as diffusion barriers between Al and Si. Backscattering spectrometry combined with cross‐sectional transmission electron microscopy were used to determine the barrier effectiveness. It was found that aluminum can be melted on top of the Si/Ta–Si–N structure (675 °C for 30 min) without any evidence of metallurgical interactions between the layers.

AB - Amorphous Ta–Si–N thin films of a wide range of compositions were prepared by rf reactive sputtering of a Ta5Si3 target in a N2/Ar plasma. The relationship between films’ composition and resistivity is reported. All obtained films were tested as diffusion barriers between Al and Si. Backscattering spectrometry combined with cross‐sectional transmission electron microscopy were used to determine the barrier effectiveness. It was found that aluminum can be melted on top of the Si/Ta–Si–N structure (675 °C for 30 min) without any evidence of metallurgical interactions between the layers.

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DO - 10.1116/1.576620

M3 - Article

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SP - 3006

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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