An accurate single-electron pump based on a highly tunable silicon quantum dot

Alessandro Rossi (Corresponding Author), Tuomo Tanttu, Kuan Yen Tan, Ilkka Iisakka, Ruichen Zhao, Kok Wai Chan, Giuseppe C. Tattamazzi, Sven Rogge, Andrew S. Dzurak, Mikko Möttönen

Research output: Contribution to journalArticleScientificpeer-review

51 Citations (Scopus)

Abstract

Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel barriers as an accurate source of quantized current. The charge transfer accuracy of our pump can be dramatically enhanced by controlling the electrostatic confinement of the dot using purposely engineered gate electrodes. Improvements in the operational robustness, as well as suppression of nonadiabatic transitions that reduce pumping accuracy, are achieved via small adjustments of the gate voltages. We can produce an output current in excess of 80 pA with experimentally determined relative uncertainty below 50 parts per million.
Original languageEnglish
Pages (from-to)3405-3411
JournalNano Letters
Volume14
Issue number6
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

Keywords

  • nanoelectronics
  • silicon
  • quantum dot
  • single-electron pump
  • electrical current standard
  • metrology

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