@inproceedings{3068235d8531406eb6cec07408de205d,
title = "An analysis of conventional and self-aligned four terminal resistor structures for the determination of the contact resistivity from end resistance measurements",
abstract = "A computer model based on the finite element method has been applied to evaluate the effect of the parasitic area between contact and diffusion edges on end resistance measurements in four terminal Kelvin resistor structures. The model is then applied to Al/Ti/n+ Si contacts and a value of contact resistivity of Qc = 1.8×10−7 Ω·cm² is derived. For comparison, the use of a self-aligned structure to avoid parasitic effects is presented and the first experimental results obtained on Al/Ti/n+Si and Al/CoSi2/n+Si contacts are shown and discussed.",
author = "Ilkka Suni and M. Finetti and Kaj Grahn",
year = "1986",
doi = "10.1557/PROC-71-363",
language = "English",
isbn = "978-0-931837-37-1",
series = "MRS Online Proceedings ",
publisher = "Materials Research Society",
pages = "363--368",
editor = "M. Wittmer and James Stimmell and M. Strathman",
booktitle = "Materials Issues in Silicon Integrated Circuit Processing",
address = "United States",
}