An analytical model for the vertical insulated gate bipolar transistor

Kaj Grahn; Simo Eränen

doi:10.1007/978-3-642-52314-4_88

An analytical model for the vertical insulated gate bipolar transistor

Kaj Grahn, Simo Eränen

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

An analytical steady-state model has been developed for the vertical IGBT. Effects like conductivity modulation, collector bias variations, emitter injection efficiency, recombination and channel conductance are included. Simulated results are in good agreement with measured characteristics for a 1000V IGBT device.

Original language	English
Title of host publication	19th European Solid State Device Research Conference (Essderc '89)
Editors	A. Heuberger, H. Ryssel, P. Lange
Place of Publication	Berlin
Publisher	Springer
Pages	431-434
ISBN (Print)	0-387-51000-1
DOIs	https://doi.org/10.1007/978-3-642-52314-4_88
Publication status	Published - 1989
MoE publication type	A4 Article in a conference publication
Event	19th European Solid State Device Research Conference (Essderc '89) - Berlin, Germany Duration: 11 Sept 1989 → 14 Sept 1989

Conference

Conference	19th European Solid State Device Research Conference (Essderc '89)
Country/Territory	Germany
City	Berlin
Period	11/09/89 → 14/09/89

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10.1007/978-3-642-52314-4_88

https://ieeexplore.ieee.org/document/5436576

Cite this

@inproceedings{bbaed441dbd84668b8b38095399bd23b,

title = "An analytical model for the vertical insulated gate bipolar transistor",

abstract = "An analytical steady-state model has been developed for the vertical IGBT. Effects like conductivity modulation, collector bias variations, emitter injection efficiency, recombination and channel conductance are included. Simulated results are in good agreement with measured characteristics for a 1000V IGBT device.",

author = "Kaj Grahn and Simo Er{\"a}nen",

year = "1989",

doi = "10.1007/978-3-642-52314-4_88",

language = "English",

isbn = "0-387-51000-1",

pages = "431--434",

editor = "A. Heuberger and H. Ryssel and P. Lange",

booktitle = "19th European Solid State Device Research Conference (Essderc '89)",

publisher = "Springer",

address = "Germany",

note = "19th European Solid State Device Research Conference (Essderc '89) ; Conference date: 11-09-1989 Through 14-09-1989",

}

Grahn, K & Eränen, S 1989, An analytical model for the vertical insulated gate bipolar transistor. in A Heuberger, H Ryssel & P Lange (eds), 19th European Solid State Device Research Conference (Essderc '89). Springer, Berlin, pp. 431-434, 19th European Solid State Device Research Conference (Essderc '89), Berlin, Berlin, Germany, 11/09/89. https://doi.org/10.1007/978-3-642-52314-4_88

An analytical model for the vertical insulated gate bipolar transistor. / Grahn, Kaj; Eränen, Simo.
19th European Solid State Device Research Conference (Essderc '89). ed. / A. Heuberger; H. Ryssel; P. Lange. Berlin: Springer, 1989. p. 431-434.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - An analytical model for the vertical insulated gate bipolar transistor

AU - Grahn, Kaj

AU - Eränen, Simo

PY - 1989

Y1 - 1989

N2 - An analytical steady-state model has been developed for the vertical IGBT. Effects like conductivity modulation, collector bias variations, emitter injection efficiency, recombination and channel conductance are included. Simulated results are in good agreement with measured characteristics for a 1000V IGBT device.

AB - An analytical steady-state model has been developed for the vertical IGBT. Effects like conductivity modulation, collector bias variations, emitter injection efficiency, recombination and channel conductance are included. Simulated results are in good agreement with measured characteristics for a 1000V IGBT device.

U2 - 10.1007/978-3-642-52314-4_88

DO - 10.1007/978-3-642-52314-4_88

M3 - Conference article in proceedings

SN - 0-387-51000-1

SP - 431

EP - 434

BT - 19th European Solid State Device Research Conference (Essderc '89)

A2 - Heuberger, A.

A2 - Ryssel, H.

A2 - Lange, P.

PB - Springer

CY - Berlin

T2 - 19th European Solid State Device Research Conference (Essderc '89)

Y2 - 11 September 1989 through 14 September 1989

ER -

An analytical model for the vertical insulated gate bipolar transistor

Abstract

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