An E-band Bidirectional PALNA in 0.13 μm SiGe BiCMOS Technology

R. Ahamed; M. Varonen; D. Parveg; M. Najmussadat; M. Kantanen; Y. Tawfik; K. A.I. Halonen

doi:10.23919/EuMIC50153.2022.9783945

An E-band Bidirectional PALNA in 0.13 μm SiGe BiCMOS Technology

R. Ahamed, M. Varonen, D. Parveg, M. Najmussadat, M. Kantanen, Y. Tawfik, K. A.I. Halonen

Aalto University

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

This paper presents an E-band bidirectional power amplifier and low-noise amplifier (PALNA) in a 0.13 μm SiGe BiCMOS technology. In the transmit mode, the LNA is isolated through the impedance matching network with enabler setting. In the receive mode, the input of the PA is isolated by matching network with enabler setting while the output of the PA is isolated by a differential switch to have minimal effect on the noise figure (NF) and input matching of the LNA. The measured PALNA achieves a peak gain of 24.3 dB at 72 GHz with a 3 dB bandwidth from 64 GHz to 85 GHz in the receive mode. The measured NF is 5.8 dB at 74 GHz. In the transmit mode, the differential PA results in 19.5 dB peak gain at 76 GHz and +9.2 dBm of saturated power at 74 GHz. The overall chip size is 1.25 mm2. The PALNA consumes a DC power of 19 mW and 131 mW in the receive and transmit mode, respectively. The designed bidirectional PALNA is suitable for a half-duplex system with shared Tx/Rx antenna.

Original language	English
Title of host publication	EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	281-284
ISBN (Electronic)	978-2-87487-064-4
DOIs	https://doi.org/10.23919/EuMIC50153.2022.9783945
Publication status	Published - 2022
MoE publication type	A4 Article in a conference publication
Event	16th European Microwave Integrated Circuits Conference, EuMIC 2021 - London, United Kingdom Duration: 3 Apr 2022 → 4 Apr 2022

Conference

Conference	16th European Microwave Integrated Circuits Conference, EuMIC 2021
Country/Territory	United Kingdom
City	London
Period	3/04/22 → 4/04/22

Funding

ACKNOWLEDGMENT The authors would like to thank the Academy of Finland for supporting this work through TeraCom project. The work of M. Varonen was supported through the Academy of Finland Research Fellow project MIDERI (decision no 310234).

Keywords

BiCMOS
bidirectional
E-band
LNA
millimeter-wave
MMIC
PA
PALNA

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10.23919/EuMIC50153.2022.9783945

Cite this

@inproceedings{153817d8162a4168974bc5ae310d1458,

title = "An E-band Bidirectional PALNA in 0.13 μm SiGe BiCMOS Technology",

abstract = "This paper presents an E-band bidirectional power amplifier and low-noise amplifier (PALNA) in a 0.13 μm SiGe BiCMOS technology. In the transmit mode, the LNA is isolated through the impedance matching network with enabler setting. In the receive mode, the input of the PA is isolated by matching network with enabler setting while the output of the PA is isolated by a differential switch to have minimal effect on the noise figure (NF) and input matching of the LNA. The measured PALNA achieves a peak gain of 24.3 dB at 72 GHz with a 3 dB bandwidth from 64 GHz to 85 GHz in the receive mode. The measured NF is 5.8 dB at 74 GHz. In the transmit mode, the differential PA results in 19.5 dB peak gain at 76 GHz and +9.2 dBm of saturated power at 74 GHz. The overall chip size is 1.25 mm2. The PALNA consumes a DC power of 19 mW and 131 mW in the receive and transmit mode, respectively. The designed bidirectional PALNA is suitable for a half-duplex system with shared Tx/Rx antenna.",

keywords = "BiCMOS, bidirectional, E-band, LNA, millimeter-wave, MMIC, PA, PALNA",

author = "R. Ahamed and M. Varonen and D. Parveg and M. Najmussadat and M. Kantanen and Y. Tawfik and Halonen, {K. A.I.}",

note = "Publisher Copyright: {\textcopyright} 2022 European Microwave Association (EuMA).; 16th European Microwave Integrated Circuits Conference, EuMIC 2021 ; Conference date: 03-04-2022 Through 04-04-2022",

year = "2022",

doi = "10.23919/EuMIC50153.2022.9783945",

language = "English",

pages = "281--284",

booktitle = "EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Ahamed, R, Varonen, M , Parveg, D, Najmussadat, M, Kantanen, M, Tawfik, Y & Halonen, KAI 2022, An E-band Bidirectional PALNA in 0.13 μm SiGe BiCMOS Technology. in EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference. IEEE Institute of Electrical and Electronic Engineers, pp. 281-284, 16th European Microwave Integrated Circuits Conference, EuMIC 2021, London, United Kingdom, 3/04/22. https://doi.org/10.23919/EuMIC50153.2022.9783945

An E-band Bidirectional PALNA in 0.13 μm SiGe BiCMOS Technology. / Ahamed, R.; Varonen, M.; Parveg, D. et al.
EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference. IEEE Institute of Electrical and Electronic Engineers, 2022. p. 281-284.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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T1 - An E-band Bidirectional PALNA in 0.13 μm SiGe BiCMOS Technology

AU - Ahamed, R.

AU - Varonen, M.

AU - Parveg, D.

AU - Najmussadat, M.

AU - Kantanen, M.

AU - Tawfik, Y.

AU - Halonen, K. A.I.

PY - 2022

Y1 - 2022

N2 - This paper presents an E-band bidirectional power amplifier and low-noise amplifier (PALNA) in a 0.13 μm SiGe BiCMOS technology. In the transmit mode, the LNA is isolated through the impedance matching network with enabler setting. In the receive mode, the input of the PA is isolated by matching network with enabler setting while the output of the PA is isolated by a differential switch to have minimal effect on the noise figure (NF) and input matching of the LNA. The measured PALNA achieves a peak gain of 24.3 dB at 72 GHz with a 3 dB bandwidth from 64 GHz to 85 GHz in the receive mode. The measured NF is 5.8 dB at 74 GHz. In the transmit mode, the differential PA results in 19.5 dB peak gain at 76 GHz and +9.2 dBm of saturated power at 74 GHz. The overall chip size is 1.25 mm2. The PALNA consumes a DC power of 19 mW and 131 mW in the receive and transmit mode, respectively. The designed bidirectional PALNA is suitable for a half-duplex system with shared Tx/Rx antenna.

AB - This paper presents an E-band bidirectional power amplifier and low-noise amplifier (PALNA) in a 0.13 μm SiGe BiCMOS technology. In the transmit mode, the LNA is isolated through the impedance matching network with enabler setting. In the receive mode, the input of the PA is isolated by matching network with enabler setting while the output of the PA is isolated by a differential switch to have minimal effect on the noise figure (NF) and input matching of the LNA. The measured PALNA achieves a peak gain of 24.3 dB at 72 GHz with a 3 dB bandwidth from 64 GHz to 85 GHz in the receive mode. The measured NF is 5.8 dB at 74 GHz. In the transmit mode, the differential PA results in 19.5 dB peak gain at 76 GHz and +9.2 dBm of saturated power at 74 GHz. The overall chip size is 1.25 mm2. The PALNA consumes a DC power of 19 mW and 131 mW in the receive and transmit mode, respectively. The designed bidirectional PALNA is suitable for a half-duplex system with shared Tx/Rx antenna.

KW - BiCMOS

KW - bidirectional

KW - E-band

KW - LNA

KW - millimeter-wave

KW - MMIC

KW - PA

KW - PALNA

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U2 - 10.23919/EuMIC50153.2022.9783945

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M3 - Conference article in proceedings

AN - SCOPUS:85133029540

SP - 281

EP - 284

BT - EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 16th European Microwave Integrated Circuits Conference, EuMIC 2021

Y2 - 3 April 2022 through 4 April 2022

ER -

An E-band Bidirectional PALNA in 0.13 μm SiGe BiCMOS Technology

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