TY - JOUR
T1 - An effect of As flux on GaAs/AlAs quantum wells
T2 - A combined photoluminescence and reflection high-energy electron diffraction study
AU - Pakarinen, Janne
AU - Polojärvi, V.
AU - Laukkanen, Pasi
AU - Tukiainen, A.
AU - Laakso, A.
AU - Peng, C.S.
AU - Tuomisto, P.
AU - Korpijärvi, V. M.
AU - Puustinen, J.
AU - Pessa, M.
PY - 2008/12/30
Y1 - 2008/12/30
N2 - Photoluminescence (PL) measurements and in situ reflection high-energy electron diffraction (RHEED) observations were used to optimize GaAs/AlAs multi-quantum-well (MQW) structures grown by molecular beam epitaxy (MBE) under different As fluxes. PL peaks were identified with computer simulations, intensity behavior as a function of temperature, and with previous results in literature. The room temperature PL intensity from our MQW samples first increases with the As flux and then decreases as the flux is increased. Combining our RHEED and PL observations, we propose that an optimum As flux for growth of GaAs/AlAs structures is close to the special As flux at which the GaAs(1 0 0) surface reconstruction changes from (2 × 4) to (4 × 2). The reasons for the findings are discussed.
AB - Photoluminescence (PL) measurements and in situ reflection high-energy electron diffraction (RHEED) observations were used to optimize GaAs/AlAs multi-quantum-well (MQW) structures grown by molecular beam epitaxy (MBE) under different As fluxes. PL peaks were identified with computer simulations, intensity behavior as a function of temperature, and with previous results in literature. The room temperature PL intensity from our MQW samples first increases with the As flux and then decreases as the flux is increased. Combining our RHEED and PL observations, we propose that an optimum As flux for growth of GaAs/AlAs structures is close to the special As flux at which the GaAs(1 0 0) surface reconstruction changes from (2 × 4) to (4 × 2). The reasons for the findings are discussed.
KW - Crystal structure
KW - Interfaces
KW - Molecular beam epitaxy
KW - Quantum wells
KW - Semiconducting III-V materials
UR - https://www.scopus.com/pages/publications/56949093568
U2 - 10.1016/j.apsusc.2008.08.062
DO - 10.1016/j.apsusc.2008.08.062
M3 - Article
AN - SCOPUS:56949093568
SN - 0169-4332
VL - 255
SP - 2985
EP - 2988
JO - Applied Surface Science
JF - Applied Surface Science
IS - 5 PART 2
ER -