An eigenmode superposition model for lateral acoustic coupling between thin film BAW resonators

Tuomas Pensala, Johanna Meltaus, Markku Ylilammi

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

6 Citations (Scopus)

Abstract

A simple model is developed for calculating lateral acoustical coupling between adjacent thin film BAW resonators forming an electrical N-port. The model is based on plate wave dispersion properties of different regions of the device and solution of lateral eigenmodes and eigenfrequencies. Mechanical and electrical response of the device is calculated as a superposition of eigenmodes according to voltage drive at one electrical port at a time while extracting current induced in the other ports, leading to a full Y-parameter description of the device. Comparison of model prediction with experimental results from adjacent large square resonators and narrow finger-like resonators is performed. Large resonators exhibit comb-shaped oscillating transmission characteristics over wide frequency band, while narrow finger create a single pass-band. Fair qualitative agreement is obtained.
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publicationIEEE International Ultrasonics Symposium, ULTSYM 2008
Place of PublicationPiscataway, NJ, USA
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages1540-1543
ISBN (Print)978-1-4244-2428-3, 978-1-4244-2480-1
DOIs
Publication statusPublished - 2008
MoE publication typeNot Eligible
EventIEEE Ultrasonics Symposium - Beijing, China
Duration: 2 Nov 20085 Nov 2008

Conference

ConferenceIEEE Ultrasonics Symposium
CountryChina
CityBeijing
Period2/11/085/11/08

Fingerprint

acoustic coupling
resonators
thin films
wave dispersion
electric potential
predictions

Keywords

  • BAW
  • resonator
  • filter
  • AlN
  • GHz
  • acoustic coupling
  • thin film
  • SMR

Cite this

Pensala, T., Meltaus, J., & Ylilammi, M. (2008). An eigenmode superposition model for lateral acoustic coupling between thin film BAW resonators. In Proceedings: IEEE International Ultrasonics Symposium, ULTSYM 2008 (pp. 1540-1543). Piscataway, NJ, USA: IEEE Institute of Electrical and Electronic Engineers . https://doi.org/l0.1109IULTSYM.2008.0375
Pensala, Tuomas ; Meltaus, Johanna ; Ylilammi, Markku. / An eigenmode superposition model for lateral acoustic coupling between thin film BAW resonators. Proceedings: IEEE International Ultrasonics Symposium, ULTSYM 2008. Piscataway, NJ, USA : IEEE Institute of Electrical and Electronic Engineers , 2008. pp. 1540-1543
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title = "An eigenmode superposition model for lateral acoustic coupling between thin film BAW resonators",
abstract = "A simple model is developed for calculating lateral acoustical coupling between adjacent thin film BAW resonators forming an electrical N-port. The model is based on plate wave dispersion properties of different regions of the device and solution of lateral eigenmodes and eigenfrequencies. Mechanical and electrical response of the device is calculated as a superposition of eigenmodes according to voltage drive at one electrical port at a time while extracting current induced in the other ports, leading to a full Y-parameter description of the device. Comparison of model prediction with experimental results from adjacent large square resonators and narrow finger-like resonators is performed. Large resonators exhibit comb-shaped oscillating transmission characteristics over wide frequency band, while narrow finger create a single pass-band. Fair qualitative agreement is obtained.",
keywords = "BAW, resonator, filter, AlN, GHz, acoustic coupling, thin film, SMR",
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Pensala, T, Meltaus, J & Ylilammi, M 2008, An eigenmode superposition model for lateral acoustic coupling between thin film BAW resonators. in Proceedings: IEEE International Ultrasonics Symposium, ULTSYM 2008. IEEE Institute of Electrical and Electronic Engineers , Piscataway, NJ, USA, pp. 1540-1543, IEEE Ultrasonics Symposium, Beijing, China, 2/11/08. https://doi.org/l0.1109IULTSYM.2008.0375

An eigenmode superposition model for lateral acoustic coupling between thin film BAW resonators. / Pensala, Tuomas; Meltaus, Johanna; Ylilammi, Markku.

Proceedings: IEEE International Ultrasonics Symposium, ULTSYM 2008. Piscataway, NJ, USA : IEEE Institute of Electrical and Electronic Engineers , 2008. p. 1540-1543.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

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AU - Meltaus, Johanna

AU - Ylilammi, Markku

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N2 - A simple model is developed for calculating lateral acoustical coupling between adjacent thin film BAW resonators forming an electrical N-port. The model is based on plate wave dispersion properties of different regions of the device and solution of lateral eigenmodes and eigenfrequencies. Mechanical and electrical response of the device is calculated as a superposition of eigenmodes according to voltage drive at one electrical port at a time while extracting current induced in the other ports, leading to a full Y-parameter description of the device. Comparison of model prediction with experimental results from adjacent large square resonators and narrow finger-like resonators is performed. Large resonators exhibit comb-shaped oscillating transmission characteristics over wide frequency band, while narrow finger create a single pass-band. Fair qualitative agreement is obtained.

AB - A simple model is developed for calculating lateral acoustical coupling between adjacent thin film BAW resonators forming an electrical N-port. The model is based on plate wave dispersion properties of different regions of the device and solution of lateral eigenmodes and eigenfrequencies. Mechanical and electrical response of the device is calculated as a superposition of eigenmodes according to voltage drive at one electrical port at a time while extracting current induced in the other ports, leading to a full Y-parameter description of the device. Comparison of model prediction with experimental results from adjacent large square resonators and narrow finger-like resonators is performed. Large resonators exhibit comb-shaped oscillating transmission characteristics over wide frequency band, while narrow finger create a single pass-band. Fair qualitative agreement is obtained.

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Pensala T, Meltaus J, Ylilammi M. An eigenmode superposition model for lateral acoustic coupling between thin film BAW resonators. In Proceedings: IEEE International Ultrasonics Symposium, ULTSYM 2008. Piscataway, NJ, USA: IEEE Institute of Electrical and Electronic Engineers . 2008. p. 1540-1543 https://doi.org/l0.1109IULTSYM.2008.0375