An eigenmode superposition model for lateral acoustic coupling between thin film BAW resonators

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    6 Citations (Scopus)

    Abstract

    A simple model is developed for calculating lateral acoustical coupling between adjacent thin film BAW resonators forming an electrical N-port. The model is based on plate wave dispersion properties of different regions of the device and solution of lateral eigenmodes and eigenfrequencies. Mechanical and electrical response of the device is calculated as a superposition of eigenmodes according to voltage drive at one electrical port at a time while extracting current induced in the other ports, leading to a full Y-parameter description of the device. Comparison of model prediction with experimental results from adjacent large square resonators and narrow finger-like resonators is performed. Large resonators exhibit comb-shaped oscillating transmission characteristics over wide frequency band, while narrow finger create a single pass-band. Fair qualitative agreement is obtained.
    Original languageEnglish
    Title of host publicationProceedings
    Subtitle of host publicationIEEE International Ultrasonics Symposium, ULTSYM 2008
    Place of PublicationPiscataway, NJ, USA
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages1540-1543
    ISBN (Print)978-1-4244-2428-3, 978-1-4244-2480-1
    DOIs
    Publication statusPublished - 2008
    MoE publication typeNot Eligible
    EventIEEE Ultrasonics Symposium - Beijing, China
    Duration: 2 Nov 20085 Nov 2008

    Conference

    ConferenceIEEE Ultrasonics Symposium
    CountryChina
    CityBeijing
    Period2/11/085/11/08

    Keywords

    • BAW
    • resonator
    • filter
    • AlN
    • GHz
    • acoustic coupling
    • thin film
    • SMR

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  • Cite this

    Pensala, T., Meltaus, J., & Ylilammi, M. (2008). An eigenmode superposition model for lateral acoustic coupling between thin film BAW resonators. In Proceedings: IEEE International Ultrasonics Symposium, ULTSYM 2008 (pp. 1540-1543). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/l0.1109IULTSYM.2008.0375