Abstract
A simple model is developed for calculating lateral acoustical coupling
between adjacent thin film BAW resonators forming an electrical N-port. The
model is based on plate wave dispersion properties of different regions of the
device and solution of lateral eigenmodes and eigenfrequencies. Mechanical
and electrical response of the device is calculated as a superposition of
eigenmodes according to voltage drive at one electrical port at a time while
extracting current induced in the other ports, leading to a full Y-parameter
description of the device. Comparison of model prediction with experimental
results from adjacent large square resonators and narrow finger-like
resonators is performed. Large resonators exhibit comb-shaped oscillating
transmission characteristics over wide frequency band, while narrow finger
create a single pass-band. Fair qualitative agreement is obtained.
| Original language | English |
|---|---|
| Title of host publication | Proceedings |
| Subtitle of host publication | IEEE International Ultrasonics Symposium, ULTSYM 2008 |
| Place of Publication | Piscataway, NJ, USA |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 1540-1543 |
| ISBN (Print) | 978-1-4244-2428-3, 978-1-4244-2480-1 |
| DOIs | |
| Publication status | Published - 2008 |
| MoE publication type | Not Eligible |
| Event | IEEE Ultrasonics Symposium - Beijing, China Duration: 2 Nov 2008 → 5 Nov 2008 |
Conference
| Conference | IEEE Ultrasonics Symposium |
|---|---|
| Country/Territory | China |
| City | Beijing |
| Period | 2/11/08 → 5/11/08 |
Keywords
- BAW
- resonator
- filter
- AlN
- GHz
- acoustic coupling
- thin film
- SMR