An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

Pekka T. Törmä; Muhammad Ali; Olli Svensk; Sakari Sintonen; Pasi Kostamo; Sami Suihkonen; Markku Sopanen; Harri Lipsanen; Maxim A. Odnoblyudov; Vladislav E. Bougrov

doi:10.1016/j.physb.2009.08.318

An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

Pekka T. Törmä, Muhammad Ali, Olli Svensk, Sakari Sintonen, Pasi Kostamo, Sami Suihkonen, Markku Sopanen, Harri Lipsanen, Maxim A. Odnoblyudov, Vladislav E. Bougrov

Not published at VTT

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Abstract

GaN films were fabricated by metal organic vapor phase epitaxy (MOVPE) on patterned sapphire substrates (PSSs) with either direct or inverse type patterned structures. Both of these two types of PSSs had their own unique GaN growth process which depart from the standard growth on the planar c-plane. GaN films on PSSs showed decreased threading dislocation (TD) density. However, differences between the crystal quality of the GaN films grown on PSSs were observed. It was also found out with one of the pattern type that the TD density varied laterally and followed the periodicity of the pattern on the sapphire surface. © 2009 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	4911-4915
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	404
Issue number	23-24
DOIs	https://doi.org/10.1016/j.physb.2009.08.318
Publication status	Published - 15 Dec 2009
MoE publication type	A1 Journal article-refereed

Keywords

MOCVD
Nitrides
Semiconducting III-V materials

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10.1016/j.physb.2009.08.318

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Cite this

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title = "An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE",

abstract = "GaN films were fabricated by metal organic vapor phase epitaxy (MOVPE) on patterned sapphire substrates (PSSs) with either direct or inverse type patterned structures. Both of these two types of PSSs had their own unique GaN growth process which depart from the standard growth on the planar c-plane. GaN films on PSSs showed decreased threading dislocation (TD) density. However, differences between the crystal quality of the GaN films grown on PSSs were observed. It was also found out with one of the pattern type that the TD density varied laterally and followed the periodicity of the pattern on the sapphire surface. {\textcopyright} 2009 Elsevier B.V. All rights reserved.",

keywords = "MOCVD, Nitrides, Semiconducting III-V materials",

author = "T{\"o}rm{\"a}, {Pekka T.} and Muhammad Ali and Olli Svensk and Sakari Sintonen and Pasi Kostamo and Sami Suihkonen and Markku Sopanen and Harri Lipsanen and Odnoblyudov, {Maxim A.} and Bougrov, {Vladislav E.}",

year = "2009",

month = dec,

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doi = "10.1016/j.physb.2009.08.318",

language = "English",

volume = "404",

pages = "4911--4915",

journal = "Physica B: Condensed Matter",

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TY - JOUR

T1 - An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

AU - Törmä, Pekka T.

AU - Ali, Muhammad

AU - Svensk, Olli

AU - Sintonen, Sakari

AU - Kostamo, Pasi

AU - Suihkonen, Sami

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - Odnoblyudov, Maxim A.

AU - Bougrov, Vladislav E.

PY - 2009/12/15

Y1 - 2009/12/15

N2 - GaN films were fabricated by metal organic vapor phase epitaxy (MOVPE) on patterned sapphire substrates (PSSs) with either direct or inverse type patterned structures. Both of these two types of PSSs had their own unique GaN growth process which depart from the standard growth on the planar c-plane. GaN films on PSSs showed decreased threading dislocation (TD) density. However, differences between the crystal quality of the GaN films grown on PSSs were observed. It was also found out with one of the pattern type that the TD density varied laterally and followed the periodicity of the pattern on the sapphire surface. © 2009 Elsevier B.V. All rights reserved.

AB - GaN films were fabricated by metal organic vapor phase epitaxy (MOVPE) on patterned sapphire substrates (PSSs) with either direct or inverse type patterned structures. Both of these two types of PSSs had their own unique GaN growth process which depart from the standard growth on the planar c-plane. GaN films on PSSs showed decreased threading dislocation (TD) density. However, differences between the crystal quality of the GaN films grown on PSSs were observed. It was also found out with one of the pattern type that the TD density varied laterally and followed the periodicity of the pattern on the sapphire surface. © 2009 Elsevier B.V. All rights reserved.

KW - MOCVD

KW - Nitrides

KW - Semiconducting III-V materials

U2 - 10.1016/j.physb.2009.08.318

DO - 10.1016/j.physb.2009.08.318

M3 - Article

SN - 0921-4526

VL - 404

SP - 4911

EP - 4915

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 23-24

ER -

An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

Abstract

Keywords

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