Abstract
Design equations are derived for an RLC matching network. The equations can be applied in lossy-match MESFET amplifiers to give flat gain and low SWR (standing wave ratio) over wide bandwidths. Experimental results are presented for a monolithic 1-20-GHz amplifier. The theory is useful, in general, for the design of wideband, resistive matching networks for capacitive loads with a small series resistance.
Original language | English |
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Title of host publication | IEEE MTT-S International Microwave Symposium Digest |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Number of pages | 4 |
DOIs | |
Publication status | Published - 1989 |
MoE publication type | A4 Article in a conference publication |
Event | 1989 IEEE MTT-S International Microwave Symposium - Long Beach, United States Duration: 13 Jun 1989 → 15 Jun 1989 |
Conference
Conference | 1989 IEEE MTT-S International Microwave Symposium |
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Country/Territory | United States |
City | Long Beach |
Period | 13/06/89 → 15/06/89 |