An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications

T. Kangasvieri, J. Halme, J. Vähäkangas, Markku Lahti

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

15 Citations (Scopus)

Abstract

This paper presents a high-performance BGA-via transition structure suitable for multilayer system-in-package (SiP) applications over a wide frequency range from DC up to the F-band.
The main issues involved in designing and optimizing the entire vertical transition path, starting from a motherboard and ending at the top surface of a BGA module package are outlined. The module substrates were manufactured in a standard, multilayer low-temperature co-fired ceramic (LTCC) process.
The ceramic modules with plastic-core solder balls were mounted on a motherboard using standard surface-mount assembly processes. The RF performance of the developed transition structure was validated with on-wafer scattering parameter measurements. The measured results correlated very well with full-wave electromagnetic (EM) simulations, exhibiting return and insertion loss values better than 22 dB and 0.6 dB, respectively, up to 50 GHz.
Moreover, the EM simulations demonstrated that the 1-dB cut-off frequency of the complete BGA-via transition structure can be extended from 55 GHz up to nearly 70 GHz at the expense of poorer return loss.
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publicationIEEE MTT-S International Microwave Symposium 2007
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages1637-1640
ISBN (Print)1-4244-0687-0, 1-4244-0688-9
DOIs
Publication statusPublished - 2007
MoE publication typeA4 Article in a conference publication
EventIEEE/MTT-S International Microwave Symposium 2007 - Honolulu, HI, United States
Duration: 3 Jun 20078 Jun 2007

Conference

ConferenceIEEE/MTT-S International Microwave Symposium 2007
CountryUnited States
CityHonolulu, HI
Period3/06/078/06/07

Fingerprint

packaging
millimeter waves
high speed
broadband
modules
ceramics
solders
insertion loss
balls
electromagnetic radiation
cut-off
plastics
simulation
assembly
frequency ranges
direct current
wafers
electromagnetism
scattering

Keywords

  • BGA
  • Broadband
  • LTCC
  • Millimeter-wave
  • Transition
  • Via

Cite this

Kangasvieri, T., Halme, J., Vähäkangas, J., & Lahti, M. (2007). An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications. In Proceedings: IEEE MTT-S International Microwave Symposium 2007 (pp. 1637-1640). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/MWSYM.2007.380001
Kangasvieri, T. ; Halme, J. ; Vähäkangas, J. ; Lahti, Markku. / An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications. Proceedings: IEEE MTT-S International Microwave Symposium 2007. IEEE Institute of Electrical and Electronic Engineers , 2007. pp. 1637-1640
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Kangasvieri, T, Halme, J, Vähäkangas, J & Lahti, M 2007, An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications. in Proceedings: IEEE MTT-S International Microwave Symposium 2007. IEEE Institute of Electrical and Electronic Engineers , pp. 1637-1640, IEEE/MTT-S International Microwave Symposium 2007, Honolulu, HI, United States, 3/06/07. https://doi.org/10.1109/MWSYM.2007.380001

An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications. / Kangasvieri, T.; Halme, J.; Vähäkangas, J.; Lahti, Markku.

Proceedings: IEEE MTT-S International Microwave Symposium 2007. IEEE Institute of Electrical and Electronic Engineers , 2007. p. 1637-1640.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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N2 - This paper presents a high-performance BGA-via transition structure suitable for multilayer system-in-package (SiP) applications over a wide frequency range from DC up to the F-band. The main issues involved in designing and optimizing the entire vertical transition path, starting from a motherboard and ending at the top surface of a BGA module package are outlined. The module substrates were manufactured in a standard, multilayer low-temperature co-fired ceramic (LTCC) process. The ceramic modules with plastic-core solder balls were mounted on a motherboard using standard surface-mount assembly processes. The RF performance of the developed transition structure was validated with on-wafer scattering parameter measurements. The measured results correlated very well with full-wave electromagnetic (EM) simulations, exhibiting return and insertion loss values better than 22 dB and 0.6 dB, respectively, up to 50 GHz. Moreover, the EM simulations demonstrated that the 1-dB cut-off frequency of the complete BGA-via transition structure can be extended from 55 GHz up to nearly 70 GHz at the expense of poorer return loss.

AB - This paper presents a high-performance BGA-via transition structure suitable for multilayer system-in-package (SiP) applications over a wide frequency range from DC up to the F-band. The main issues involved in designing and optimizing the entire vertical transition path, starting from a motherboard and ending at the top surface of a BGA module package are outlined. The module substrates were manufactured in a standard, multilayer low-temperature co-fired ceramic (LTCC) process. The ceramic modules with plastic-core solder balls were mounted on a motherboard using standard surface-mount assembly processes. The RF performance of the developed transition structure was validated with on-wafer scattering parameter measurements. The measured results correlated very well with full-wave electromagnetic (EM) simulations, exhibiting return and insertion loss values better than 22 dB and 0.6 dB, respectively, up to 50 GHz. Moreover, the EM simulations demonstrated that the 1-dB cut-off frequency of the complete BGA-via transition structure can be extended from 55 GHz up to nearly 70 GHz at the expense of poorer return loss.

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Kangasvieri T, Halme J, Vähäkangas J, Lahti M. An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications. In Proceedings: IEEE MTT-S International Microwave Symposium 2007. IEEE Institute of Electrical and Electronic Engineers . 2007. p. 1637-1640 https://doi.org/10.1109/MWSYM.2007.380001