Abstract
The main issues involved in designing and optimizing the entire vertical transition path, starting from a motherboard and ending at the top surface of a BGA module package are outlined. The module substrates were manufactured in a standard, multilayer low-temperature co-fired ceramic (LTCC) process.
The ceramic modules with plastic-core solder balls were mounted on a motherboard using standard surface-mount assembly processes. The RF performance of the developed transition structure was validated with on-wafer scattering parameter measurements. The measured results correlated very well with full-wave electromagnetic (EM) simulations, exhibiting return and insertion loss values better than 22 dB and 0.6 dB, respectively, up to 50 GHz.
Moreover, the EM simulations demonstrated that the 1-dB cut-off frequency of the complete BGA-via transition structure can be extended from 55 GHz up to nearly 70 GHz at the expense of poorer return loss.
| Original language | English |
|---|---|
| Title of host publication | Proceedings |
| Subtitle of host publication | IEEE MTT-S International Microwave Symposium 2007 |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 1637-1640 |
| ISBN (Print) | 1-4244-0687-0, 1-4244-0688-9 |
| DOIs | |
| Publication status | Published - 2007 |
| MoE publication type | A4 Article in a conference publication |
| Event | IEEE/MTT-S International Microwave Symposium 2007 - Honolulu, HI, United States Duration: 3 Jun 2007 → 8 Jun 2007 |
Conference
| Conference | IEEE/MTT-S International Microwave Symposium 2007 |
|---|---|
| Country | United States |
| City | Honolulu, HI |
| Period | 3/06/07 → 8/06/07 |
Fingerprint
Keywords
- BGA
- Broadband
- LTCC
- Millimeter-wave
- Transition
- Via
Cite this
}
An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications. / Kangasvieri, T.; Halme, J.; Vähäkangas, J.; Lahti, Markku.
Proceedings: IEEE MTT-S International Microwave Symposium 2007. IEEE Institute of Electrical and Electronic Engineers , 2007. p. 1637-1640.Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review
TY - GEN
T1 - An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications
AU - Kangasvieri, T.
AU - Halme, J.
AU - Vähäkangas, J.
AU - Lahti, Markku
PY - 2007
Y1 - 2007
N2 - This paper presents a high-performance BGA-via transition structure suitable for multilayer system-in-package (SiP) applications over a wide frequency range from DC up to the F-band. The main issues involved in designing and optimizing the entire vertical transition path, starting from a motherboard and ending at the top surface of a BGA module package are outlined. The module substrates were manufactured in a standard, multilayer low-temperature co-fired ceramic (LTCC) process. The ceramic modules with plastic-core solder balls were mounted on a motherboard using standard surface-mount assembly processes. The RF performance of the developed transition structure was validated with on-wafer scattering parameter measurements. The measured results correlated very well with full-wave electromagnetic (EM) simulations, exhibiting return and insertion loss values better than 22 dB and 0.6 dB, respectively, up to 50 GHz. Moreover, the EM simulations demonstrated that the 1-dB cut-off frequency of the complete BGA-via transition structure can be extended from 55 GHz up to nearly 70 GHz at the expense of poorer return loss.
AB - This paper presents a high-performance BGA-via transition structure suitable for multilayer system-in-package (SiP) applications over a wide frequency range from DC up to the F-band. The main issues involved in designing and optimizing the entire vertical transition path, starting from a motherboard and ending at the top surface of a BGA module package are outlined. The module substrates were manufactured in a standard, multilayer low-temperature co-fired ceramic (LTCC) process. The ceramic modules with plastic-core solder balls were mounted on a motherboard using standard surface-mount assembly processes. The RF performance of the developed transition structure was validated with on-wafer scattering parameter measurements. The measured results correlated very well with full-wave electromagnetic (EM) simulations, exhibiting return and insertion loss values better than 22 dB and 0.6 dB, respectively, up to 50 GHz. Moreover, the EM simulations demonstrated that the 1-dB cut-off frequency of the complete BGA-via transition structure can be extended from 55 GHz up to nearly 70 GHz at the expense of poorer return loss.
KW - BGA
KW - Broadband
KW - LTCC
KW - Millimeter-wave
KW - Transition
KW - Via
U2 - 10.1109/MWSYM.2007.380001
DO - 10.1109/MWSYM.2007.380001
M3 - Conference article in proceedings
SN - 1-4244-0687-0
SN - 1-4244-0688-9
SP - 1637
EP - 1640
BT - Proceedings
PB - IEEE Institute of Electrical and Electronic Engineers
ER -