An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications

T. Kangasvieri; J. Halme; J. Vähäkangas; Markku Lahti

doi:10.1109/MWSYM.2007.380001

An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications

T. Kangasvieri, J. Halme, J. Vähäkangas, Markku Lahti

BA191E Photonics and RF integration

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

16 Citations (Scopus)

Abstract

This paper presents a high-performance BGA-via transition structure suitable for multilayer system-in-package (SiP) applications over a wide frequency range from DC up to the F-band.
The main issues involved in designing and optimizing the entire vertical transition path, starting from a motherboard and ending at the top surface of a BGA module package are outlined. The module substrates were manufactured in a standard, multilayer low-temperature co-fired ceramic (LTCC) process.
The ceramic modules with plastic-core solder balls were mounted on a motherboard using standard surface-mount assembly processes. The RF performance of the developed transition structure was validated with on-wafer scattering parameter measurements. The measured results correlated very well with full-wave electromagnetic (EM) simulations, exhibiting return and insertion loss values better than 22 dB and 0.6 dB, respectively, up to 50 GHz.
Moreover, the EM simulations demonstrated that the 1-dB cut-off frequency of the complete BGA-via transition structure can be extended from 55 GHz up to nearly 70 GHz at the expense of poorer return loss.

Original language	English
Title of host publication	Proceedings
Subtitle of host publication	IEEE MTT-S International Microwave Symposium 2007
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	1637-1640
ISBN (Print)	1-4244-0687-0, 1-4244-0688-9
DOIs	https://doi.org/10.1109/MWSYM.2007.380001
Publication status	Published - 2007
MoE publication type	A4 Article in a conference publication
Event	IEEE/MTT-S International Microwave Symposium 2007 - Honolulu, HI, United States Duration: 3 Jun 2007 → 8 Jun 2007

Conference

Conference	IEEE/MTT-S International Microwave Symposium 2007
Country	United States
City	Honolulu, HI
Period	3/06/07 → 8/06/07

Keywords

BGA
Broadband
LTCC
Millimeter-wave
Transition
Via

Access to Document

10.1109/MWSYM.2007.380001

Fingerprint Dive into the research topics of 'An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications'. Together they form a unique fingerprint.

Cite this

@inproceedings{f64981f2e1d44fa6bdd4c7cd74eef775,

title = "An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications",

abstract = "This paper presents a high-performance BGA-via transition structure suitable for multilayer system-in-package (SiP) applications over a wide frequency range from DC up to the F-band. The main issues involved in designing and optimizing the entire vertical transition path, starting from a motherboard and ending at the top surface of a BGA module package are outlined. The module substrates were manufactured in a standard, multilayer low-temperature co-fired ceramic (LTCC) process. The ceramic modules with plastic-core solder balls were mounted on a motherboard using standard surface-mount assembly processes. The RF performance of the developed transition structure was validated with on-wafer scattering parameter measurements. The measured results correlated very well with full-wave electromagnetic (EM) simulations, exhibiting return and insertion loss values better than 22 dB and 0.6 dB, respectively, up to 50 GHz. Moreover, the EM simulations demonstrated that the 1-dB cut-off frequency of the complete BGA-via transition structure can be extended from 55 GHz up to nearly 70 GHz at the expense of poorer return loss.",

keywords = "BGA, Broadband, LTCC, Millimeter-wave, Transition, Via",

author = "T. Kangasvieri and J. Halme and J. V{\"a}h{\"a}kangas and Markku Lahti",

year = "2007",

doi = "10.1109/MWSYM.2007.380001",

language = "English",

isbn = "1-4244-0687-0",

pages = "1637--1640",

booktitle = "Proceedings",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "IEEE/MTT-S International Microwave Symposium 2007 ; Conference date: 03-06-2007 Through 08-06-2007",

}

Kangasvieri, T, Halme, J, Vähäkangas, J & Lahti, M 2007, An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications. in Proceedings: IEEE MTT-S International Microwave Symposium 2007. IEEE Institute of Electrical and Electronic Engineers, pp. 1637-1640, IEEE/MTT-S International Microwave Symposium 2007, Honolulu, HI, United States, 3/06/07. https://doi.org/10.1109/MWSYM.2007.380001

An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications. / Kangasvieri, T.; Halme, J.; Vähäkangas, J.; Lahti, Markku.

Proceedings: IEEE MTT-S International Microwave Symposium 2007. IEEE Institute of Electrical and Electronic Engineers, 2007. p. 1637-1640.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications

AU - Kangasvieri, T.

AU - Halme, J.

AU - Vähäkangas, J.

AU - Lahti, Markku

PY - 2007

Y1 - 2007

N2 - This paper presents a high-performance BGA-via transition structure suitable for multilayer system-in-package (SiP) applications over a wide frequency range from DC up to the F-band. The main issues involved in designing and optimizing the entire vertical transition path, starting from a motherboard and ending at the top surface of a BGA module package are outlined. The module substrates were manufactured in a standard, multilayer low-temperature co-fired ceramic (LTCC) process. The ceramic modules with plastic-core solder balls were mounted on a motherboard using standard surface-mount assembly processes. The RF performance of the developed transition structure was validated with on-wafer scattering parameter measurements. The measured results correlated very well with full-wave electromagnetic (EM) simulations, exhibiting return and insertion loss values better than 22 dB and 0.6 dB, respectively, up to 50 GHz. Moreover, the EM simulations demonstrated that the 1-dB cut-off frequency of the complete BGA-via transition structure can be extended from 55 GHz up to nearly 70 GHz at the expense of poorer return loss.

AB - This paper presents a high-performance BGA-via transition structure suitable for multilayer system-in-package (SiP) applications over a wide frequency range from DC up to the F-band. The main issues involved in designing and optimizing the entire vertical transition path, starting from a motherboard and ending at the top surface of a BGA module package are outlined. The module substrates were manufactured in a standard, multilayer low-temperature co-fired ceramic (LTCC) process. The ceramic modules with plastic-core solder balls were mounted on a motherboard using standard surface-mount assembly processes. The RF performance of the developed transition structure was validated with on-wafer scattering parameter measurements. The measured results correlated very well with full-wave electromagnetic (EM) simulations, exhibiting return and insertion loss values better than 22 dB and 0.6 dB, respectively, up to 50 GHz. Moreover, the EM simulations demonstrated that the 1-dB cut-off frequency of the complete BGA-via transition structure can be extended from 55 GHz up to nearly 70 GHz at the expense of poorer return loss.

KW - BGA

KW - Broadband

KW - LTCC

KW - Millimeter-wave

KW - Transition

KW - Via

U2 - 10.1109/MWSYM.2007.380001

DO - 10.1109/MWSYM.2007.380001

M3 - Conference article in proceedings

SN - 1-4244-0687-0

SN - 1-4244-0688-9

SP - 1637

EP - 1640

BT - Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - IEEE/MTT-S International Microwave Symposium 2007

Y2 - 3 June 2007 through 8 June 2007

ER -