Abstract
This paper presents a high-performance BGA-via transition structure suitable for multilayer system-in-package (SiP) applications over a wide frequency range from DC up to the F-band.
The main issues involved in designing and optimizing the entire vertical transition path, starting from a motherboard and ending at the top surface of a BGA module package are outlined. The module substrates were manufactured in a standard, multilayer low-temperature co-fired ceramic (LTCC) process.
The ceramic modules with plastic-core solder balls were mounted on a motherboard using standard surface-mount assembly processes. The RF performance of the developed transition structure was validated with on-wafer scattering parameter measurements. The measured results correlated very well with full-wave electromagnetic (EM) simulations, exhibiting return and insertion loss values better than 22 dB and 0.6 dB, respectively, up to 50 GHz.
Moreover, the EM simulations demonstrated that the 1-dB cut-off frequency of the complete BGA-via transition structure can be extended from 55 GHz up to nearly 70 GHz at the expense of poorer return loss.
The main issues involved in designing and optimizing the entire vertical transition path, starting from a motherboard and ending at the top surface of a BGA module package are outlined. The module substrates were manufactured in a standard, multilayer low-temperature co-fired ceramic (LTCC) process.
The ceramic modules with plastic-core solder balls were mounted on a motherboard using standard surface-mount assembly processes. The RF performance of the developed transition structure was validated with on-wafer scattering parameter measurements. The measured results correlated very well with full-wave electromagnetic (EM) simulations, exhibiting return and insertion loss values better than 22 dB and 0.6 dB, respectively, up to 50 GHz.
Moreover, the EM simulations demonstrated that the 1-dB cut-off frequency of the complete BGA-via transition structure can be extended from 55 GHz up to nearly 70 GHz at the expense of poorer return loss.
| Original language | English |
|---|---|
| Title of host publication | Proceedings |
| Subtitle of host publication | IEEE MTT-S International Microwave Symposium 2007 |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 1637-1640 |
| ISBN (Print) | 1-4244-0687-0, 1-4244-0688-9 |
| DOIs | |
| Publication status | Published - 2007 |
| MoE publication type | A4 Article in a conference publication |
| Event | IEEE/MTT-S International Microwave Symposium 2007 - Honolulu, HI, United States Duration: 3 Jun 2007 → 8 Jun 2007 |
Conference
| Conference | IEEE/MTT-S International Microwave Symposium 2007 |
|---|---|
| Country | United States |
| City | Honolulu, HI |
| Period | 3/06/07 → 8/06/07 |
Keywords
- BGA
- Broadband
- LTCC
- Millimeter-wave
- Transition
- Via
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Cite this
Kangasvieri, T., Halme, J., Vähäkangas, J., & Lahti, M. (2007). An ultra-wideband BGA-via transition for high-speed digital and millimeter-wave packaging applications. In Proceedings: IEEE MTT-S International Microwave Symposium 2007 (pp. 1637-1640). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/MWSYM.2007.380001