Analysis of a floating gate Metal-Nitride-Metal-Oxide-Silicon transistor in an analog BeCMOS process

Hannu Ronkainen (Corresponding Author), Kristian Theqvist

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    Stacked gate nonvolatile memory cells were tested with a molybdenum gate BeCMOS process. Writing and erasing with Poole-Frenkel conduction and writing with drain avalanche injection are characterised. The measured endurance was found to be more than 10 000 cycles and the estimated retention more than 10 y. These properties are comparable to polysilicon gate devices.
    Original languageEnglish
    Pages (from-to)49-53
    JournalPhysica Scripta
    Volume2002
    Issue numberT101
    DOIs
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed
    Event19th Nordic Semiconductor Meeting, NSM19
    - Copenhagen, Denmark
    Duration: 20 May 200123 May 2001

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