Stacked gate nonvolatile memory cells were tested with a molybdenum gate BeCMOS process. Writing and erasing with Poole-Frenkel conduction and writing with drain avalanche injection are characterised. The measured endurance was found to be more than 10 000 cycles and the estimated retention more than 10 y. These properties are comparable to polysilicon gate devices.
|Publication status||Published - 2002|
|MoE publication type||A1 Journal article-refereed|
|Event||19th Nordic Semiconductor Meeting, NSM19|
- Copenhagen, Denmark
Duration: 20 May 2001 → 23 May 2001