Analysis of a floating gate Metal-Nitride-Metal-Oxide-Silicon transistor in an analog BeCMOS process

Hannu Ronkainen (Corresponding Author), Kristian Theqvist

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Stacked gate nonvolatile memory cells were tested with a molybdenum gate BeCMOS process. Writing and erasing with Poole-Frenkel conduction and writing with drain avalanche injection are characterised. The measured endurance was found to be more than 10 000 cycles and the estimated retention more than 10 y. These properties are comparable to polysilicon gate devices.
Original languageEnglish
Pages (from-to)49-53
JournalPhysica Scripta
Volume2002
Issue numberT101
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

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silicon transistors
metal nitrides
Nitrides
Avalanche
Conduction
floating
metal oxides
Oxides
Injection
Silicon
Metals
analogs
Analogue
Cycle
Cell
endurance
avalanches
molybdenum
injection
conduction

Cite this

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title = "Analysis of a floating gate Metal-Nitride-Metal-Oxide-Silicon transistor in an analog BeCMOS process",
abstract = "Stacked gate nonvolatile memory cells were tested with a molybdenum gate BeCMOS process. Writing and erasing with Poole-Frenkel conduction and writing with drain avalanche injection are characterised. The measured endurance was found to be more than 10 000 cycles and the estimated retention more than 10 y. These properties are comparable to polysilicon gate devices.",
author = "Hannu Ronkainen and Kristian Theqvist",
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doi = "10.1238/Physica.Topical.101a00049",
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Analysis of a floating gate Metal-Nitride-Metal-Oxide-Silicon transistor in an analog BeCMOS process. / Ronkainen, Hannu (Corresponding Author); Theqvist, Kristian.

In: Physica Scripta, Vol. 2002, No. T101, 2002, p. 49-53.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Analysis of a floating gate Metal-Nitride-Metal-Oxide-Silicon transistor in an analog BeCMOS process

AU - Ronkainen, Hannu

AU - Theqvist, Kristian

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N2 - Stacked gate nonvolatile memory cells were tested with a molybdenum gate BeCMOS process. Writing and erasing with Poole-Frenkel conduction and writing with drain avalanche injection are characterised. The measured endurance was found to be more than 10 000 cycles and the estimated retention more than 10 y. These properties are comparable to polysilicon gate devices.

AB - Stacked gate nonvolatile memory cells were tested with a molybdenum gate BeCMOS process. Writing and erasing with Poole-Frenkel conduction and writing with drain avalanche injection are characterised. The measured endurance was found to be more than 10 000 cycles and the estimated retention more than 10 y. These properties are comparable to polysilicon gate devices.

U2 - 10.1238/Physica.Topical.101a00049

DO - 10.1238/Physica.Topical.101a00049

M3 - Article

VL - 2002

SP - 49

EP - 53

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

IS - T101

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