Analysis of a floating gate Metal-Nitride-Metal-Oxide-Silicon transistor in an analog BeCMOS process

Hannu Ronkainen (Corresponding Author), Kristian Theqvist

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    Stacked gate nonvolatile memory cells were tested with a molybdenum gate BeCMOS process. Writing and erasing with Poole-Frenkel conduction and writing with drain avalanche injection are characterised. The measured endurance was found to be more than 10 000 cycles and the estimated retention more than 10 y. These properties are comparable to polysilicon gate devices.
    Original languageEnglish
    Pages (from-to)49-53
    JournalPhysica Scripta
    Volume2002
    Issue numberT101
    DOIs
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    silicon transistors
    metal nitrides
    Nitrides
    Avalanche
    Conduction
    floating
    metal oxides
    Oxides
    Injection
    Silicon
    Metals
    analogs
    Analogue
    Cycle
    Cell
    endurance
    avalanches
    molybdenum
    injection
    conduction

    Cite this

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    title = "Analysis of a floating gate Metal-Nitride-Metal-Oxide-Silicon transistor in an analog BeCMOS process",
    abstract = "Stacked gate nonvolatile memory cells were tested with a molybdenum gate BeCMOS process. Writing and erasing with Poole-Frenkel conduction and writing with drain avalanche injection are characterised. The measured endurance was found to be more than 10 000 cycles and the estimated retention more than 10 y. These properties are comparable to polysilicon gate devices.",
    author = "Hannu Ronkainen and Kristian Theqvist",
    year = "2002",
    doi = "10.1238/Physica.Topical.101a00049",
    language = "English",
    volume = "2002",
    pages = "49--53",
    journal = "Physica Scripta",
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    }

    Analysis of a floating gate Metal-Nitride-Metal-Oxide-Silicon transistor in an analog BeCMOS process. / Ronkainen, Hannu (Corresponding Author); Theqvist, Kristian.

    In: Physica Scripta, Vol. 2002, No. T101, 2002, p. 49-53.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Analysis of a floating gate Metal-Nitride-Metal-Oxide-Silicon transistor in an analog BeCMOS process

    AU - Ronkainen, Hannu

    AU - Theqvist, Kristian

    PY - 2002

    Y1 - 2002

    N2 - Stacked gate nonvolatile memory cells were tested with a molybdenum gate BeCMOS process. Writing and erasing with Poole-Frenkel conduction and writing with drain avalanche injection are characterised. The measured endurance was found to be more than 10 000 cycles and the estimated retention more than 10 y. These properties are comparable to polysilicon gate devices.

    AB - Stacked gate nonvolatile memory cells were tested with a molybdenum gate BeCMOS process. Writing and erasing with Poole-Frenkel conduction and writing with drain avalanche injection are characterised. The measured endurance was found to be more than 10 000 cycles and the estimated retention more than 10 y. These properties are comparable to polysilicon gate devices.

    U2 - 10.1238/Physica.Topical.101a00049

    DO - 10.1238/Physica.Topical.101a00049

    M3 - Article

    VL - 2002

    SP - 49

    EP - 53

    JO - Physica Scripta

    JF - Physica Scripta

    SN - 0031-8949

    IS - T101

    ER -