Analysis of retained deuterium on Be-based films

Ion implantation vs. in-situ loading

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Pure Be, Be-O and Be-O-C thin coatings were deposited using high-power impulse magnetron sputtering (HiPIMS) with and without incorporation of deuterium. The coatings produced without deuterium were implanted afterwards with 15 keV 2H+ ion beams with a fluence limited to 2 × 1017 ion/cm2 in order to mitigate the damage imposed by ion irradiation and prevent a fast gas release. The as-deposited and as-implanted coatings were analysed by IBA techniques, namely by elastic and Rutherford backscattering spectrometries (EBS and RBS, respectively), nuclear reaction analysis (NRA) and by time-of-flight elastic recoil detection analysis (ToF-ERDA). Despite distinct deuterium depth profiles in the implanted samples, the results show that for the present ion implantation and deposition parameters, similar retained amounts are revealed in the films loaded by ion implantation or during the HiPIMS deposition, assuring ion implantation as a competitive and reliable method for fuel incorporation in thin Be-based films for retention studies in controlled conditions.

Original languageEnglish
Pages (from-to)242-247
Number of pages6
JournalNuclear Materials and Energy
Volume17
DOIs
Publication statusPublished - Dec 2018
MoE publication typeNot Eligible

Fingerprint

Deuterium
Ion implantation
ion implantation
deuterium
coatings
Coatings
Magnetron sputtering
impulses
magnetron sputtering
Nuclear reactions
Rutherford backscattering spectroscopy
Ion bombardment
ion irradiation
nuclear reactions
Spectrometry
Ion beams
backscattering
fluence
Gases
ion beams

Keywords

  • Beryllium coatings
  • Deuterium
  • HiPIMS
  • Ion implantation

Cite this

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title = "Analysis of retained deuterium on Be-based films: Ion implantation vs. in-situ loading",
abstract = "Pure Be, Be-O and Be-O-C thin coatings were deposited using high-power impulse magnetron sputtering (HiPIMS) with and without incorporation of deuterium. The coatings produced without deuterium were implanted afterwards with 15 keV 2H+ ion beams with a fluence limited to 2 × 1017 ion/cm2 in order to mitigate the damage imposed by ion irradiation and prevent a fast gas release. The as-deposited and as-implanted coatings were analysed by IBA techniques, namely by elastic and Rutherford backscattering spectrometries (EBS and RBS, respectively), nuclear reaction analysis (NRA) and by time-of-flight elastic recoil detection analysis (ToF-ERDA). Despite distinct deuterium depth profiles in the implanted samples, the results show that for the present ion implantation and deposition parameters, similar retained amounts are revealed in the films loaded by ion implantation or during the HiPIMS deposition, assuring ion implantation as a competitive and reliable method for fuel incorporation in thin Be-based films for retention studies in controlled conditions.",
keywords = "Beryllium coatings, Deuterium, HiPIMS, Ion implantation",
author = "Rodrigo Mateus and Corneliu Porosnicu and Lungu, {Cristian Petricǎ} and C. Cruz and Zdravko Siketić and Radović, {Iva Bogdanović} and A. Hakola and Eduardo Alves",
year = "2018",
month = "12",
doi = "10.1016/j.nme.2018.10.007",
language = "English",
volume = "17",
pages = "242--247",
journal = "Nuclear Materials and Energy",
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publisher = "Elsevier",

}

Analysis of retained deuterium on Be-based films : Ion implantation vs. in-situ loading. /.

In: Nuclear Materials and Energy, Vol. 17, 12.2018, p. 242-247.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Analysis of retained deuterium on Be-based films

T2 - Ion implantation vs. in-situ loading

AU - Mateus, Rodrigo

AU - Porosnicu, Corneliu

AU - Lungu, Cristian Petricǎ

AU - Cruz, C.

AU - Siketić, Zdravko

AU - Radović, Iva Bogdanović

AU - Hakola, A.

AU - Alves, Eduardo

PY - 2018/12

Y1 - 2018/12

N2 - Pure Be, Be-O and Be-O-C thin coatings were deposited using high-power impulse magnetron sputtering (HiPIMS) with and without incorporation of deuterium. The coatings produced without deuterium were implanted afterwards with 15 keV 2H+ ion beams with a fluence limited to 2 × 1017 ion/cm2 in order to mitigate the damage imposed by ion irradiation and prevent a fast gas release. The as-deposited and as-implanted coatings were analysed by IBA techniques, namely by elastic and Rutherford backscattering spectrometries (EBS and RBS, respectively), nuclear reaction analysis (NRA) and by time-of-flight elastic recoil detection analysis (ToF-ERDA). Despite distinct deuterium depth profiles in the implanted samples, the results show that for the present ion implantation and deposition parameters, similar retained amounts are revealed in the films loaded by ion implantation or during the HiPIMS deposition, assuring ion implantation as a competitive and reliable method for fuel incorporation in thin Be-based films for retention studies in controlled conditions.

AB - Pure Be, Be-O and Be-O-C thin coatings were deposited using high-power impulse magnetron sputtering (HiPIMS) with and without incorporation of deuterium. The coatings produced without deuterium were implanted afterwards with 15 keV 2H+ ion beams with a fluence limited to 2 × 1017 ion/cm2 in order to mitigate the damage imposed by ion irradiation and prevent a fast gas release. The as-deposited and as-implanted coatings were analysed by IBA techniques, namely by elastic and Rutherford backscattering spectrometries (EBS and RBS, respectively), nuclear reaction analysis (NRA) and by time-of-flight elastic recoil detection analysis (ToF-ERDA). Despite distinct deuterium depth profiles in the implanted samples, the results show that for the present ion implantation and deposition parameters, similar retained amounts are revealed in the films loaded by ion implantation or during the HiPIMS deposition, assuring ion implantation as a competitive and reliable method for fuel incorporation in thin Be-based films for retention studies in controlled conditions.

KW - Beryllium coatings

KW - Deuterium

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KW - Ion implantation

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