Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN

Muhammad Ali; A.E. Romanov; Sami Suihkonen; Olli Svensk; Sakari Sintonen; Markku Sopanen; Harri Lipsanen; V.N. Nevedomsky; N.A. Bert; M.A. Odnoblyudov; V.E. Bougrov

doi:10.1016/j.jcrysgro.2012.01.047

Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN

Muhammad Ali, A.E. Romanov, Sami Suihkonen, Olli Svensk, Sakari Sintonen, Markku Sopanen, Harri Lipsanen, V.N. Nevedomsky, N.A. Bert, M.A. Odnoblyudov, V.E. Bougrov

Not published at VTT

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	59-64
Number of pages	6
Journal	Journal of Crystal Growth
Volume	344
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2012.01.047
Publication status	Published - 1 Apr 2012
MoE publication type	A1 Journal article-refereed

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10.1016/j.jcrysgro.2012.01.047

Cite this

Ali, M., Romanov, A. E., Suihkonen, S., Svensk, O., Sintonen, S., Sopanen, M., Lipsanen, H., Nevedomsky, V. N., Bert, N. A., Odnoblyudov, M. A., & Bougrov, V. E. (2012). Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN. Journal of Crystal Growth, 344(1), 59-64. https://doi.org/10.1016/j.jcrysgro.2012.01.047

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AU - Sintonen, Sakari

AU - Sopanen, Markku

AU - Lipsanen, Harri

AU - Nevedomsky, V.N.

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AU - Odnoblyudov, M.A.

AU - Bougrov, V.E.

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